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Anna Krivosheeva, Анна Кривошеева
Anna Krivosheeva, Анна Кривошеева
Belarusian State University of Informatics and Radioelectronics (BSUIR)
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Electronic properties of bulk and monolayer TMDs: theoretical study within DFT framework (GVJ‐2e method)
J Gusakova, X Wang, LL Shiau, A Krivosheeva, V Shaposhnikov, ...
physica status solidi (a) 214 (12), 1700218, 2017
3772017
Ab initio modeling of the structural, electronic, and optical properties of A II B IV C 2 V semiconductors
VL Shaposhnikov, AV Krivosheeva, VE Borisenko, JL Lazzari, ...
Physical Review B 85 (20), 205201, 2012
1542012
Electronic properties of semiconducting silicides: fundamentals and recent predictions
LI Ivanenko, VL Shaposhnikov, AB Filonov, AV Krivosheeva, ...
Thin solid films 461 (1), 141-147, 2004
1012004
Theoretical study of defect impact on two-dimensional MoS2
AV Krivosheeva, VL Shaposhnikov, VE Borisenko, JL Lazzari, ...
Journal of Semiconductors 36 (12), 122002, 2015
552015
Structural, electronic and optical properties of II–IV–N2 compounds (II = Be, Zn; IV = Si, Ge)
VL Shaposhnikov, AV Krivosheeva, F Arnaud D'Avitaya, JL Lazzari, ...
physica status solidi (b) 245 (1), 142-148, 2008
462008
Reconstruction of quasi-one-dimensional In∕ Si (111) systems: Charge-and spin-density waves versus bonding
X Lopez-Lozano, A Krivosheeva, AA Stekolnikov, L Meza-Montes, ...
Physical Review B 73 (3), 035430, 2006
402006
Electronic and magnetic properties of Mn-doped BeSiAs2 and BeGeAs2 compounds
AV Krivosheeva, VL Shaposhnikov, FA d’Avitaya, VE Borisenko, ...
Journal of Physics: Condensed Matter 21 (4), 045507, 2009
362009
Electronic structure of stressed CrSi2
AV Krivosheeva, VL Shaposhnikov, VE Borisenko
Materials Science and Engineering: B 101 (1-3), 309-312, 2003
302003
Prospects on Mn-doped ZnGeP2 for spintronics
AV Krivosheeva, VL Shaposhnikov, VV Lyskouski, VE Borisenko, ...
Microelectronics Reliability 46 (9-11), 1747-1749, 2006
212006
Effect of stresses in electronic properties of chromium disilicide
VL Shaposhnikov, AV Krivosheeva, AE Krivosheev, AB Filonov, ...
Microelectronic Engineering 64 (1-4), 219-223, 2002
212002
Band structure of Mg2Si and Mg2Ge semiconducting compounds with a strained crystal lattice
AV Krivosheeva, AN Kholod, VL Shaposhnikov, AE Krivosheev, ...
Semiconductors 36, 496-500, 2002
212002
Band gap modifications of two-dimensional defected MoS2
AV Krivosheeva, VL Shaposhnikov, VE Borisenko, JL Lazzari, ...
International Journal of Nanotechnology 12 (8-9), 654-662, 2015
192015
Electronic properties of thin BaSi2 films with different orientations
DB Migas, VO Bogorodz, AV Krivosheeva, VL Shaposhnikov, AB Filonov, ...
Japanese Journal of Applied Physics 56 (5S1), 05DA03, 2017
172017
Vibrational properties of the quasi-one-dimensional I n/S i (111)−(4× 1) system
F Bechstedt, A Krivosheeva, J Furthmüller, AA Stekolnikov
Physical Review B 68 (19), 193406, 2003
172003
Structure, electronic and optical properties of tin sulfide
VL Shaposhnikov, AV Krivosheeva, VE Borisenko, JL Lazzari
ScienceJet 1 (16), 1-4, 2012
16*2012
Structural, electronic and optical properties of semiconducting rhenium silicide
VL Shaposhnikov, AV Krivosheeva, LI Ivanenko, AB Filonov, ...
Journal of Physics: Condensed Matter 16 (3), 303, 2004
162004
Energy band gap tuning in Te-doped WS2/WSe2 heterostructures
A Krivosheeva, V Shaposhnikov, V Borisenko, JL Lazzari
Journal of Materials Science 55 (23), 9695-9702, 2020
142020
Impact of defects on electronic properties of heterostructures constructed from monolayers of transition metal dichalcogenides
VL Shaposhnikov, AV Krivosheeva, VE Borisenko
physica status solidi (b) 256 (5), 1800355, 2019
142019
Structural, electronic and optical properties of a new binary phase–ruthenium disilicide
VL Shaposhnikov, AB Filonov, AV Krivosheeva, LI Ivanenko, ...
physica status solidi (b) 242 (14), 2864-2871, 2005
102005
First-principle calculations of band-structures and optical properties of SnS, Cu2SnS3 and Cu2ZnSnS4 for photovoltaics
VL Shaposhnikov, AV Krivosheeva, VE Borisenko, JL Lazzari
ScienceJet 1, 15, 2012
82012
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Artículos 1–20