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Marc Ilegems
Marc Ilegems
Professor, EPFL
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Continuous wave operation of a mid-infrared semiconductor laser at room temperature
M Beck, D Hofstetter, T Aellen, J Faist, U Oesterle, M Ilegems, E Gini, ...
science 295 (5553), 301-305, 2002
11932002
Infrared lattice vibrations and free-electron dispersion in GaN
AS Barker Jr, M Ilegems
Physical Review B 7 (2), 743, 1973
9511973
Absorption, reflectance, and luminescence of GaN epitaxial layers
R Dingle, DD Sell, SE Stokowski, M Ilegems
Physical Review B 4 (4), 1211, 1971
7631971
Measurement of cavity-polariton dispersion curve from angle-resolved photoluminescence experiments
R Houdré, C Weisbuch, RP Stanley, U Oesterle, P Pellandini, M Ilegems
Physical Review Letters 73 (15), 2043, 1994
6011994
Vacuum-field Rabi splitting in the presence of inhomogeneous broadening: Resolution of a homogeneous linewidth in an inhomogeneously broadened system
R Houdré, RP Stanley, M Ilegems
Physical Review A 53 (4), 2711, 1996
3901996
Donor-acceptor pair recombination in GaN
R Dingle, M Ilegems
Solid State Communications 9 (3), 175-180, 1971
3691971
Phase equilibria in ternary III–V systems
MB Panish, M Ilegems
Progress in Solid State Chemistry 7, 39-83, 1972
3431972
High-quality AlInN for high index contrast Bragg mirrors lattice matched to GaN
JF Carlin, M Ilegems
Applied physics letters 83 (4), 668-670, 2003
3282003
Beryllium doping and diffusion in molecular‐beam epitaxy of GaAs and AlxGa1−xAs
M Ilegems
Journal of Applied Physics 48 (3), 1278-1287, 1977
3061977
Saturation of the strong-coupling regime in a semiconductor microcavity: Free-carrier bleaching of cavity polaritons
R Houdré, JL Gibernon, P Pellandini, RP Stanley, U Oesterle, ...
Physical Review B 52 (11), 7810, 1995
2911995
Room-temperature cavity polaritons in a semiconductor microcavity
R Houdré, RP Stanley, U Oesterle, M Ilegems, C Weisbuch
Physical Review B 49 (23), 16761, 1994
2901994
Electrical properties of n-type vapor-grown gallium nitride
M Ilegems, HC Montgomery
Journal of Physics and Chemistry of Solids 34 (5), 885-895, 1973
2881973
Study of electron traps in n‐GaAs grown by molecular beam epitaxy
DV Lang, AY Cho, AC Gossard, M Ilegems, W Wiegmann
Journal of Applied Physics 47 (6), 2558-2564, 1976
2511976
Luminescence of Be‐and Mg‐doped GaN
M Ilegems, R Dingle
Journal of Applied Physics 44 (9), 4234-4235, 1973
2241973
Luminescence of Zn‐and Cd‐doped GaN
M Ilegems, R Dingle, RA Logan
Journal of Applied Physics 43 (9), 3797-3800, 1972
2231972
Far-infrared electroluminescence in a quantum cascade structure
M Rochat, J Faist, M Beck, U Oesterle, M Ilegems
Applied physics letters 73 (25), 3724-3726, 1998
2171998
Infrared Reflection Spectra of Mixed Crystals
M Ilegems, GL Pearson
Physical Review B 1 (4), 1576, 1970
2131970
Optical and electrical properties of Mn‐doped GaAs grown by molecular‐beam epitaxy
M Ilegems, R Dingle, LW Rupp Jr
Journal of Applied Physics 46 (7), 3059-3065, 1975
1921975
Coupled semiconductor microcavities
RP Stanley, R Houdre, U Oesterle, M Ilegems, C Weisbuch
Applied Physics Letters 65 (16), 2093-2095, 1994
1881994
Continuous wave operation of a 9.3 μm quantum cascade laser on a Peltier cooler
D Hofstetter, M Beck, T Aellen, J Faist, U Oesterle, M Ilegems, E Gini, ...
Applied Physics Letters 78 (14), 1964-1966, 2001
1802001
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Artículos 1–20