Follow
Rafael Dalmau
Rafael Dalmau
Senior Scientist, HexaTech, Inc
Verified email at hexatechinc.com
Title
Cited by
Cited by
Year
Progress on n‐type doping of AlGaN alloys on AlN single crystal substrates for UV optoelectronic applications
R Collazo, S Mita, J Xie, A Rice, J Tweedie, R Dalmau, Z Sitar
physica status solidi c 8 (7‐8), 2031-2033, 2011
2062011
On the origin of the 265 nm absorption band in AlN bulk crystals
R Collazo, J Xie, BE Gaddy, Z Bryan, R Kirste, M Hoffmann, R Dalmau, ...
Applied Physics Letters 100 (19), 2012
1842012
Seeded growth of AlN bulk crystals in m-and c-orientation
P Lu, R Collazo, RF Dalmau, G Durkaya, N Dietz, B Raghothamachar, ...
Journal of Crystal Growth 312 (1), 58-63, 2009
1672009
Growth and characterization of AlN and AlGaN epitaxial films on AlN single crystal substrates
R Dalmau, B Moody, R Schlesser, S Mita, J Xie, M Feneberg, B Neuschl, ...
Journal of The Electrochemical Society 158 (5), H530, 2011
1652011
Seeded growth of AlN bulk single crystals by sublimation
R Schlesser, R Dalmau, Z Sitar
Journal of crystal growth 241 (4), 416-420, 2002
1612002
Surface preparation and homoepitaxial deposition of AlN on (0001)-oriented AlN substrates by metalorganic chemical vapor deposition
A Rice, R Collazo, J Tweedie, R Dalmau, S Mita, J Xie, Z Sitar
Journal of Applied Physics 108 (4), 2010
1562010
Deep-ultraviolet light-emitting diodes fabricated on AlN substrates prepared by hydride vapor phase epitaxy
T Kinoshita, K Hironaka, T Obata, T Nagashima, R Dalmau, R Schlesser, ...
Applied Physics Express 5 (12), 122101, 2012
1512012
Preparation of a freestanding AlN substrate from a thick AlN layer grown by hydride vapor phase epitaxy on a bulk AlN substrate prepared by physical vapor transport
Y Kumagai, Y Kubota, T Nagashima, T Kinoshita, R Dalmau, R Schlesser, ...
Applied Physics Express 5 (5), 055504, 2012
1492012
Influence of gallium supersaturation on the properties of GaN grown by metalorganic chemical vapor deposition
S Mita, R Collazo, A Rice, RF Dalmau, Z Sitar
Journal of Applied Physics 104 (1), 2008
1482008
The growth and optical properties of large, high-quality AlN single crystals
M Strassburg, J Senawiratne, N Dietz, U Haboeck, A Hoffmann, V Noveski, ...
Journal of applied physics 96 (10), 5870-5876, 2004
1312004
Band-edge exciton states in AlN single crystals and epitaxial layers
L Chen, BJ Skromme, RF Dalmau, R Schlesser, Z Sitar, C Chen, W Sun, ...
Applied physics letters 85 (19), 4334-4336, 2004
1072004
Vacancy compensation and related donor-acceptor pair recombination in bulk AlN
BE Gaddy, Z Bryan, I Bryan, R Kirste, J Xie, R Dalmau, B Moody, ...
Applied Physics Letters 103 (16), 2013
1052013
Optically pumped UV lasers grown on bulk AlN substrates
T Wunderer, CL Chua, JE Northrup, Z Yang, NM Johnson, M Kneissl, ...
physica status solidi c 9 (3‐4), 822-825, 2012
942012
The role of the carbon-silicon complex in eliminating deep ultraviolet absorption in AlN
BE Gaddy, Z Bryan, I Bryan, J Xie, R Dalmau, B Moody, Y Kumagai, ...
Applied Physics Letters 104 (20), 2014
862014
X-ray photoelectron spectroscopy characterization of aluminum nitride surface oxides: thermal and hydrothermal evolution
R Dalmau, R Collazo, S Mita, Z Sitar
Journal of electronic materials 36, 414-419, 2007
842007
226 nm AlGaN/AlN UV LEDs using p-type Si for hole injection and UV reflection
D Liu, SJ Cho, J Park, J Gong, JH Seo, R Dalmau, D Zhao, K Kim, M Kim, ...
Applied physics letters 113 (1), 2018
832018
High-temperature electromechanical characterization of AlN single crystals
T Kim, J Kim, R Dalmau, R Schlesser, E Preble, X Jiang
IEEE transactions on Ultrasonics, Ferroelectrics, and Frequency control 62 …, 2015
822015
229 nm UV LEDs on aluminum nitride single crystal substrates using p-type silicon for increased hole injection
D Liu, SJ Cho, J Park, JH Seo, R Dalmau, D Zhao, K Kim, J Gong, M Kim, ...
Applied Physics Letters 112 (8), 2018
712018
Different optical absorption edges in AlN bulk crystals grown in m-and c-orientations
P Lu, R Collazo, RF Dalmau, G Durkaya, N Dietz, Z Sitar
Applied Physics Letters 93 (13), 2008
652008
Modulated precursor flow epitaxial growth of AlN layers on native AlN substrates by metal-organic chemical vapor deposition
HJ Kim, S Choi, D Yoo, JH Ryou, RD Dupuis, RF Dalmau, P Lu, Z Sitar
Applied Physics Letters 93 (2), 2008
572008
The system can't perform the operation now. Try again later.
Articles 1–20