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Daniel J. Friedman
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Band anticrossing in GaInNAs alloys
W Shan, W Walukiewicz, JW Ager III, EE Haller, JF Geisz, DJ Friedman, ...
Physical Review Letters 82 (6), 1221, 1999
20241999
40.8% efficient inverted triple-junction solar cell with two independently metamorphic junctions
JF Geisz, DJ Friedman, JS Ward, A Duda, WJ Olavarria, TE Moriarty, ...
Applied Physics Letters 93 (12), 2008
6302008
High-efficiency GaInP∕ GaAs∕ InGaAs triple-junction solar cells grown inverted with a metamorphic bottom junction
JF Geisz, S Kurtz, MW Wanlass, JS Ward, A Duda, DJ Friedman, ...
Applied Physics Letters 91 (2), 2007
5222007
1-eV solar cells with GaInNAs active layer
DJ Friedman, JF Geisz, SR Kurtz, JM Olson
Journal of Crystal Growth 195 (1-4), 409-415, 1998
4861998
29.5%‐efficient GaInP/GaAs tandem solar cells
KA Bertness, SR Kurtz, DJ Friedman, AE Kibbler, C Kramer, JM Olson
Applied Physics Letters 65 (8), 989-991, 1994
4381994
Nitrogen-Activated Transitions, Level Repulsion, and Band Gap Reduction in with
JD Perkins, A Mascarenhas, Y Zhang, JF Geisz, DJ Friedman, JM Olson, ...
Physical review letters 82 (16), 3312, 1999
4331999
Nitrogen-Activated Transitions, Level Repulsion, and Band Gap Reduction in with
JD Perkins, A Mascarenhas, Y Zhang, JF Geisz, DJ Friedman, JM Olson, ...
Physical review letters 82 (16), 3312, 1999
4331999
III–N–V semiconductors for solar photovoltaic applications
JF Geisz, DJ Friedman
Semiconductor Science and Technology 17 (8), 769, 2002
4282002
Photocurrent of 1 eV GaInNAs lattice-matched to GaAs
JF Geisz, DJ Friedman, JM Olson, SR Kurtz, BM Keyes
Journal of Crystal Growth 195 (1-4), 401-408, 1998
3621998
Optical enhancement of the open-circuit voltage in high quality GaAs solar cells
MA Steiner, JF Geisz, I García, DJ Friedman, A Duda, SR Kurtz
Journal of Applied Physics 113 (12), 2013
3252013
Enhanced external radiative efficiency for 20.8% efficient single-junction GaInP solar cells
JF Geisz, MA Steiner, I Garcia, SR Kurtz, DJ Friedman
Applied Physics Letters 103 (4), 2013
3222013
Structural changes during annealing of GaInAsN
S Kurtz, J Webb, L Gedvilas, D Friedman, J Geisz, J Olson, R King, ...
Applied Physics Letters 78 (6), 748-750, 2001
2982001
Dilute nitride GaInNAs and GaInNAsSb solar cells by molecular beam epitaxy
DB Jackrel, SR Bank, HB Yuen, MA Wistey, JS Harris, AJ Ptak, ...
Journal of Applied Physics 101 (11), 2007
2522007
Progress and challenges for next-generation high-efficiency multijunction solar cells
DJ Friedman
Current Opinion in Solid State and Materials Science 14 (6), 131-138, 2010
2282010
Multi-junction, monolithic solar cell using low-band-gap materials lattice matched to GaAs or Ge
JM Olson, SR Kurtz, DJ Friedman
US Patent 6,281,426, 2001
2192001
Effect of nitrogen on the band structure of GaInNAs alloys
W Shan, W Walukiewicz, JW Ager III, EE Haller, JF Geisz, DJ Friedman, ...
Journal of applied physics 86 (4), 2349-2351, 1999
2181999
Building a six-junction inverted metamorphic concentrator solar cell
JF Geisz, MA Steiner, N Jain, KL Schulte, RM France, WE McMahon, ...
IEEE Journal of Photovoltaics 8 (2), 626-632, 2017
2062017
Final-state effects in photoelectron diffraction
DJ Friedman, CS Fadley
Journal of Electron Spectroscopy and Related Phenomena 51, 689-700, 1990
1761990
Application of a novel multiple scattering approach to photoelectron diffraction and Auger electron diffraction
AP Kaduwela, DJ Friedman, CS Fadley
Journal of Electron Spectroscopy and Related Phenomena 57 (3-4), 223-278, 1991
1711991
Band anticrossing in III–N–V alloys
W Shan, W Walukiewicz, KM Yu, JW Ager Iii, EE Haller, JF Geisz, ...
physica status solidi (b) 223 (1), 75-85, 2001
1692001
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