| Influence of the substrate on the diffusion coefficient and the momentum relaxation in graphene: The role of surface polar phonons R Rengel, E Pascual, MJ Martín Applied Physics Letters 104 (23), 233107, 2014 | 43 | 2014 |
| Diffusion coefficient, correlation function, and power spectral density of velocity fluctuations in monolayer graphene R Rengel, MJ Martín Journal of Applied Physics 114 (14), 143702, 2013 | 40 | 2013 |
| Monte Carlo analysis of dynamic and noise performance of submicron MOSFETs at RF and microwave frequencies R Rengel, J Mateos, D Pardo, T González, MJ Martin Semiconductor science and technology 16 (11), 939, 2001 | 38 | 2001 |
| A microscopic interpretation of the RF noise performance of fabricated FDSOI MOSFETs R Rengel, MJ Martín, T González, J Mateos, D Pardo, G Dambrine, ... IEEE transactions on electron devices 53 (3), 523-532, 2006 | 27 | 2006 |
| Hot carrier and hot phonon coupling during ultrafast relaxation of photoexcited electrons in graphene JM Iglesias, MJ Martín, E Pascual, R Rengel Applied Physics Letters 108 (4), 043105, 2016 | 26 | 2016 |
| Quasiballistic transport in nanometer Si metal-oxide-semiconductor field-effect transistors: Experimental and Monte Carlo analysis J Łusakowski, MJM Martinez, R Rengel, T Gonzalez, R Tauk, YM Meziani, ... Journal of applied physics 101 (11), 114511, 2007 | 24 | 2007 |
| Injected current and quantum transmission coefficient in low Schottky barriers: WKB and Airy approaches R Rengel, E Pascual, MJ Martin IEEE electron device letters 28 (2), 171-173, 2007 | 21 | 2007 |
| Injected current and quantum transmission coefficient in low Schottky barriers: WKB and Airy approaches R Rengel, E Pascual, MJ Martin IEEE electron device letters 28 (2), 171-173, 2007 | 21 | 2007 |
| Enhanced carrier injection in Schottky contacts using dopant segregation: a Monte Carlo research E Pascual, MJ Martín, R Rengel, G Larrieu, E Dubois Semiconductor science and technology 24 (2), 025022, 2009 | 17 | 2009 |
| Electronic transport in laterally asymmetric channel MOSFET for RF analog applications R Rengel, MJ Martin IEEE transactions on electron devices 57 (10), 2448-2454, 2010 | 15 | 2010 |
| Microscopic modelling of reverse biased Schottky diodes: influence of non-equilibrium transport phenomena E Pascual, R Rengel, MJ Martín Semiconductor science and technology 22 (9), 1003, 2007 | 15 | 2007 |
| Monte Carlo simulation of noise in electronic devices: limitations and perspectives T Gonzalez, J Mateos, MJ Martín‐Martínez, S Perez, R Rengel, ... AIP Conference Proceedings 665 (1), 496-503, 2003 | 15 | 2003 |
| Numerical and experimental study of a 0.25 µm fully-depleted silicon-on-insulator MOSFET: static and dynamic radio-frequency behaviour R Rengel, J Mateos, D Pardo, T Gonzalez, MJ Martin, G Dambrine, ... Semiconductor science and technology 17 (11), 1149, 2002 | 15 | 2002 |
| Scaling of graphene field-effect transistors supported on hexagonal boron nitride: Radio-frequency stability as a limiting factor PC Feijoo, F Pasadas, JM Iglesias, MJ Martín, R Rengel, C Li, W Kim, ... Nanotechnology 28 (48), 485203, 2017 | 13 | 2017 |
| RF dynamic and noise performance of Metallic Source/Drain SOI n-MOSFETs MJ Martin, E Pascual, R Rengel Solid-state electronics 73, 64-73, 2012 | 13 | 2012 |
| Supervised coursework as a way of improving motivation in the learning of digital electronics R Rengel, MJ Martin, BG Vasallo IEEE Transactions on Education 55 (4), 525-528, 2012 | 12 | 2012 |
| Damping of acoustic flexural phonons in silicene: influence on high-field electronic transport R Rengel, JM Iglesias, EM Hamham, MJ Martín Semiconductor Science and Technology 33 (6), 065011, 2018 | 11 | 2018 |
| Carrier-carrier and carrier-phonon interactions in the dynamics of photoexcited electrons in graphene JM Iglesias, MJ Martín, E Pascual, R Rengel Journal of Physics: Conference Series 647 (1), 012003, 2015 | 11 | 2015 |
| A Monte Carlo study of electron transport in suspended monolayer graphene R Rengel, C Couso, MJ Martín 2013 Spanish Conference on Electron Devices, 175-178, 2013 | 11 | 2013 |
| A physically based investigation of the small-signal behaviour of bulk and fully-depleted silicon-on-insulator MOSFETs for microwave applications R Rengel, D Pardo, MJ Martín Semiconductor science and technology 19 (5), 634, 2004 | 11 | 2004 |
Maria Jesus Martin MartinezProfessor of Electronics (University of Salamanca)Verified email at usal.es
