Raul Rengel
Raul Rengel
Profesor Titular (Universidad de Salamanca)
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Influence of the substrate on the diffusion coefficient and the momentum relaxation in graphene: The role of surface polar phonons
R Rengel, E Pascual, MJ Martín
Applied Physics Letters 104 (23), 233107, 2014
422014
Diffusion coefficient, correlation function, and power spectral density of velocity fluctuations in monolayer graphene
R Rengel, MJ Martín
Journal of Applied Physics 114 (14), 143702, 2013
392013
Monte Carlo analysis of dynamic and noise performance of submicron MOSFETs at RF and microwave frequencies
R Rengel, J Mateos, D Pardo, T González, MJ Martin
Semiconductor science and technology 16 (11), 939, 2001
372001
A microscopic interpretation of the RF noise performance of fabricated FDSOI MOSFETs
R Rengel, MJ Martín, T González, J Mateos, D Pardo, G Dambrine, ...
IEEE transactions on electron devices 53 (3), 523-532, 2006
262006
Hot carrier and hot phonon coupling during ultrafast relaxation of photoexcited electrons in graphene
JM Iglesias, MJ Martín, E Pascual, R Rengel
Applied Physics Letters 108 (4), 043105, 2016
242016
Quasiballistic transport in nanometer Si metal-oxide-semiconductor field-effect transistors: Experimental and Monte Carlo analysis
J Łusakowski, MJM Martinez, R Rengel, T Gonzalez, R Tauk, YM Meziani, ...
Journal of applied physics 101 (11), 114511, 2007
242007
Injected current and quantum transmission coefficient in low Schottky barriers: WKB and Airy approaches
R Rengel, E Pascual, MJ Martin
IEEE electron device letters 28 (2), 171-173, 2007
212007
Injected current and quantum transmission coefficient in low Schottky barriers: WKB and Airy approaches
R Rengel, E Pascual, MJ Martin
IEEE electron device letters 28 (2), 171-173, 2007
212007
Enhanced carrier injection in Schottky contacts using dopant segregation: a Monte Carlo research
E Pascual, MJ Martín, R Rengel, G Larrieu, E Dubois
Semiconductor science and technology 24 (2), 025022, 2009
172009
Microscopic modelling of reverse biased Schottky diodes: influence of non-equilibrium transport phenomena
E Pascual, R Rengel, MJ Martín
Semiconductor science and technology 22 (9), 1003, 2007
162007
Numerical and experimental study of a 0.25 µm fully-depleted silicon-on-insulator MOSFET: static and dynamic radio-frequency behaviour
R Rengel, J Mateos, D Pardo, T Gonzalez, MJ Martin, G Dambrine, ...
Semiconductor science and technology 17 (11), 1149, 2002
162002
Electronic transport in laterally asymmetric channel MOSFET for RF analog applications
R Rengel, MJ Martin
IEEE transactions on electron devices 57 (10), 2448-2454, 2010
152010
Monte Carlo simulation of noise in electronic devices: limitations and perspectives
T Gonzalez, J Mateos, MJ Martín‐Martínez, S Perez, R Rengel, ...
AIP Conference Proceedings 665 (1), 496-503, 2003
142003
RF dynamic and noise performance of Metallic Source/Drain SOI n-MOSFETs
MJ Martin, E Pascual, R Rengel
Solid-state electronics 73, 64-73, 2012
132012
A physically based investigation of the small-signal behaviour of bulk and fully-depleted silicon-on-insulator MOSFETs for microwave applications
R Rengel, D Pardo, MJ Martín
Semiconductor science and technology 19 (5), 634, 2004
132004
Supervised coursework as a way of improving motivation in the learning of digital electronics
R Rengel, MJ Martin, BG Vasallo
IEEE Transactions on Education 55 (4), 525-528, 2012
122012
Scaling of graphene field-effect transistors supported on hexagonal boron nitride: radio-frequency stability as a limiting factor
PC Feijoo, F Pasadas, JM Iglesias, MJ Martín, R Rengel, C Li, W Kim, ...
Nanotechnology 28 (48), 485203, 2017
112017
A Monte Carlo study of electron transport in suspended monolayer graphene
R Rengel, C Couso, MJ Martín
2013 Spanish Conference on Electron Devices, 175-178, 2013
112013
Damping of acoustic flexural phonons in silicene: influence on high-field electronic transport
R Rengel, JM Iglesias, EM Hamham, MJ Martín
Semiconductor Science and Technology 33 (6), 065011, 2018
102018
Carrier-carrier and carrier-phonon interactions in the dynamics of photoexcited electrons in graphene
JM Iglesias, MJ Martín, E Pascual, R Rengel
J. Phys.: Conf. Ser 647, 012003, 2015
102015
El sistema no puede realizar la operación en estos momentos. Inténtalo de nuevo más tarde.
Artículos 1–20