Surface diffusion and layer morphology of ((112¯ 2)) GaN grown by metal-organic vapor phase epitaxy S Ploch, T Wernicke, DV Dinh, M Pristovsek, M Kneissl
Journal of Applied Physics 111 (3), 2012
60 2012 GHz bandwidth semipolar (112 2) InGaN/GaN light-emitting diodes DV Dinh, Z Quan, B Roycroft, PJ Parbrook, B Corbett
Optics letters 41 (24), 5752-5755, 2016
48 2016 Polarity determination of polar and semipolar (112¯ 2) InN and GaN layers by valence band photoemission spectroscopy D Skuridina, DV Dinh, B Lacroix, P Ruterana, M Hoffmann, Z Sitar, ...
Journal of Applied Physics 114 (17), 2013
42 2013 Synthesis and field emission properties of triangular-shaped GaN nanowires on Si (1 0 0) substrates DV Dinh, SM Kang, JH Yang, SW Kim, DH Yoon
Journal of crystal growth 311 (3), 495-499, 2009
41 2009 Size-Dependent Bandwidth of Semipolar ( M Haemmer, B Roycroft, M Akhter, DV Dinh, Z Quan, J Zhao, PJ Parbrook, ...
IEEE Photonics Technology Letters 30 (5), 439-442, 2018
40 2018 Influence of AlN buffer layer thickness and deposition methods on GaN epitaxial growth JH Yang, SM Kang, DV Dinh, DH Yoon
Thin Solid Films 517 (17), 5057-5060, 2009
37 2009 Growth and characterizations of semipolar (112¯ 2) InN DV Dinh, D Skuridina, S Solopow, M Frentrup, M Pristovsek, P Vogt, ...
Journal of Applied Physics 112 (1), 2012
36 2012 Effect of V/III ratio on the growth of (112¯ 2) AlGaN by metalorganic vapour phase epitaxy DV Dinh, SN Alam, PJ Parbrook
Journal of Crystal Growth 435, 12-18, 2016
27 2016 Single phase (112¯ 2) AlN grown on (101¯ 0) sapphire by metalorganic vapour phase epitaxy DV Dinh, M Conroy, VZ Zubialevich, N Petkov, JD Holmes, PJ Parbrook
Journal of Crystal Growth 414, 94-99, 2015
26 2015 Semipolar (11 2) InGaN light‐emitting diodes grown on chemically–mechanically polished GaN templates DV Dinh, M Akhter, S Presa, G Kozlowski, D O'Mahony, PP Maaskant, ...
physica status solidi (a) 212 (10), 2196-2200, 2015
24 2015 High bandwidth freestanding semipolar (11–22) InGaN/GaN light-emitting diodes Z Quan, DV Dinh, S Presa, B Roycroft, A Foley, M Akhter, D O'Mahony, ...
IEEE Photonics Journal 8 (5), 1-8, 2016
23 2016 Surface and crystal structure of nitridated sapphire substrates and their effect on polar InN layers D Skuridina, DV Dinh, M Pristovsek, B Lacroix, MP Chauvat, P Ruterana, ...
Applied surface science 307, 461-467, 2014
21 2014 High-temperature thermal annealing of nonpolar (1 0 1¯ 0) AlN layers sputtered on (1 0 1¯ 0) sapphire DV Dinh, N Hu, Y Honda, H Amano, M Pristovsek
Journal of Crystal Growth 498, 377-380, 2018
19 2018 Enhanced UV luminescence from InAlN quantum well structures using two temperature growth VZ Zubialevich, TC Sadler, DV Dinh, SN Alam, H Li, P Pampili, ...
Journal of luminescence 155, 108-111, 2014
19 2014 How to obtain metal-polar untwinned high-quality (1 0− 1 3) GaN on m-plane sapphire N Hu, DV Dinh, M Pristovsek, Y Honda, H Amano
Journal of Crystal Growth 507, 205-208, 2019
17 2019 Silicon doping of semipolar (112¯ 2) AlxGa1− xN (0.50≤ x≤ 0.55) DV Dinh, P Pampili, PJ Parbrook
Journal of Crystal Growth 451, 181-187, 2016
17 2016 Semipolar (202̅3) nitrides grown on 3C–SiC/(001) Si substrates DV Dinh, S Presa, M Akhter, PP Maaskant, B Corbett, PJ Parbrook
Semiconductor Science and Technology 30 (12), 125007, 2015
17 2015 Growth of semipolar (10 ̄1̄3) InN on m‐plane sapphire using MOVPE DV Dinh, M Pristovsek, R Kremzow, M Kneissl
physica status solidi (RRL)–Rapid Research Letters 4 (5‐6), 127-129, 2010
17 2010 Synthesis of GaN nanowires and nanorods via self-growth mode control SM Kang, TI Shin, DV Dinh, JH Yang, SW Kim, DH Yoon
Microelectronics journal 40 (2), 373-376, 2009
17 2009 MOVPE growth and high-temperature annealing of (101¯ 0) AlN layers on (101¯ 0) sapphire DV Dinh, H Amano, M Pristovsek
Journal of Crystal Growth 502, 14-18, 2018
16 2018 
Markus PristovsekProf. Nagoya UniversityDirección de correo verificada de imass.nagoya-u.ac.jp
