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Jan Hückelheim
Jan Hückelheim
Otros nombresJan Frederic Hückelheim, J. F. Hückelheim, Jan Hueckelheim
Dirección de correo verificada de ilh.uni-stuttgart.de
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PCB-embedded GaN-on-Si half-bridge and driver ICs with on-package gate and DC-link capacitors
S Moench, R Reiner, P Waltereit, F Benkhelifa, J Hückelheim, D Meder, ...
IEEE Transactions on Power Electronics 36 (1), 83-86, 2020
282020
Monolithic integrated AlGaN/GaN power converter topologies on high‐voltage AlN/GaN superlattice buffer
S Moench, S Müller, R Reiner, P Waltereit, H Czap, M Basler, ...
physica status solidi (a) 218 (3), 2000404, 2021
222021
A 600v gan-on-si power ic with integrated gate driver, freewheeling diode, temperature and current sensors and auxiliary devices
S Moench, R Reiner, P Waltereit, J Hueckelheim, D Meder, R Quay, ...
CIPS 2020; 11th International Conference on Integrated Power Electronics …, 2020
182020
A novel approach for the modeling of the dynamic ON-state resistance of GaN-HEMTs
MCJ Weiser, J Hückelheim, I Kallfass
IEEE Transactions on Electron Devices 68 (9), 4302-4309, 2021
132021
A robust approach for characterization of junction temperature of SiC power devices via quasi-threshold voltage as temperature sensitive electrical parameter
K Sharma, D Dayanand, KM Barón, J Ruthardt, F Münzenmayer, ...
2020 IEEE Applied Power Electronics Conference and Exposition (APEC), 1532-1536, 2020
112020
Characterization of the junction temperature of SiC power devices via quasi-threshold voltage as temperature sensitive electrical parameter
K Sharma, KM Baron, J Ruthardt, J Hueckelheim, D Koch, ...
CIPS 2020; 11th International Conference on Integrated Power Electronics …, 2020
92020
Gate driver concept for parallel operation of low-voltage high-current gan power transistors for mild-hybrid applications
D Koch, J Weimer, M Weiser, J Hueckelheim, I Kallfass
2021 IEEE Applied Power Electronics Conference and Exposition (APEC), 1755-1760, 2021
62021
Static and dynamic characterization of a monolithic integrated temperature sensor in a 600 v gan power ic
D Koch, S Moench, R Reiner, J Hueckelheim, KM Baron, P Waltereit, ...
PCIM Europe digital days 2020; International Exhibition and Conference for …, 2020
52020
High Frequency Induction Heating of Non-magnetic Metals with 24 VDC for a Terrestrial Antenna
D Dell, J Hückelheim, L Manoliu, I Kallfass
2023 IEEE Wireless Power Technology Conference and Expo (WPTCE), 1-6, 2023
22023
Comparison of Different Methods for the Characterization of Online Junction Temperature of a Gallium-Nitride Power Transistor
K Sharmaa, J Hueckelheim, KM Baron, J Ruthardt, I Kallfass
CIPS 2022; 12th International Conference on Integrated Power Electronics …, 2022
2022
Development of a Powerful Gate-Driver-Circuit for High-Frequency Control of a DC/DC-Converter Based on Gallium Nitride Transistors
R Loeffler, J Hueckelheim, D Koch, I Kallfass
PCIM Europe digital days 2021; International Exhibition and Conference for …, 2021
2021
GaNIAL-Integrierte Treiberschaltung und Schaltmodule für hocheffiziente Leistungselektronik auf Basis von Galliumnitrid: Abschlussbericht im Teilvorhaben der Universität …
I Kallfass, J Hückelheim, D Koch
Universität Stuttgart, 2020
2020
Übertemperatur-Sensorik und Schutzmaßnahmen für 600V GaN Halbbrücken
J Hückelheim
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