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Carlos Navarro
Carlos Navarro
Dept. Electrónica y Tecnología de Computadores. Universidad de Granada
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Experimental demonstration of capacitorless A2RAM cells on silicon-on-insulator
N Rodriguez, C Navarro, F Gamiz, F Andrieu, O Faynot, S Cristoloveanu
IEEE Electron Device Letters 33 (12), 1717-1719, 2012
612012
A review of the Z2-FET 1T-DRAM memory: Operation mechanisms and key parameters
S Cristoloveanu, KH Lee, MS Parihar, H El Dirani, J Lacord, S Martinie, ...
Solid-State Electronics 143, 10-19, 2018
472018
Extended Analysis of the -FET: Operation as Capacitorless eDRAM
C Navarro, J Lacord, MS Parihar, F Adamu-Lema, M Duan, N Rodriguez, ...
IEEE Transactions on Electron Devices 64 (11), 4486-4491, 2017
412017
Supercoupling effect in short-channel ultrathin fully depleted silicon-on-insulator transistors
C Navarro, M Bawedin, F Andrieu, B Sagnes, F Martinez, S Cristoloveanu
Journal of Applied Physics 118 (18), 184504, 2015
342015
-FET as Capacitor-Less eDRAM Cell For High-Density Integration
C Navarro, M Duan, MS Parihar, F Adamu-Lema, S Coseman, J Lacord, ...
IEEE Transactions on Electron Devices 64 (12), 4904-4909, 2017
312017
Reconfigurable field effect transistor for advanced CMOS: Advantages and limitations
C Navarro, S Barraud, S Martinie, J Lacord, MA Jaud, M Vinet
Solid-State Electronics 128, 155-162, 2017
302017
Experimental Demonstration of Operational Z2-FET Memory Matrix
S Navarro, C Navarro, C Marquez, H El Dirani, P Galy, M Bawedin, ...
IEEE Electron Device Letters 39 (5), 660-663, 2018
262018
Capacitor-less dynamic random access memory based on a III–V transistor with a gate length of 14 nm
C Navarro, S Karg, C Marquez, S Navarro, C Convertino, C Zota, ...
Nature Electronics 2 (9), 412-419, 2019
222019
Reconfigurable field effect transistor for advanced CMOS: A comparison with FDSOI devices
C Navarro, S Barraud, S Martinie, J Lacord, MA Jaud, M Vinet
2016 Joint International EUROSOI Workshop and International Conference on …, 2016
222016
Experimental developments of A2RAM memory cells on SOI and bulk substrates
N Rodriguez, F Gamiz, C Navarro, C Marquez, F Andrieu, O Faynot, ...
Solid-State Electronics 103, 7-14, 2015
212015
Low-power Z2-FET capacitorless 1T-DRAM
MS Parihar, KH Lee, H El Dirani, C Navarro, J Lacord, S Martinie, ...
2017 IEEE International Memory Workshop (IMW), 1-4, 2017
172017
Self-heating effects in ultrathin FD SOI transistors
N Rodriguez, C Navarro, F Andrieu, O Faynot, F Gamiz, S Cristoloveanu
IEEE 2011 International SOI Conference, 1-2, 2011
172011
Multibranch mobility analysis for the characterization of FDSOI transistors
C Navarro, N Rodriguez, A Ohata, F Gamiz, F Andrieu, ...
IEEE electron device letters 33 (8), 1102-1104, 2012
162012
Fully depleted SOI characterization by capacitance analysis of pin gated diodes
C Navarro, M Bawedin, F Andrieu, J Cluzel, S Cristoloveanu
IEEE Electron Device Letters 36 (1), 5-7, 2014
152014
Thorough understanding of retention time of Z2FET memory operation
M Duan, C Navarro, B Cheng, F Adamu-Lema, X Wang, VP Georgiev, ...
IEEE Transactions on Electron Devices 66 (1), 383-388, 2018
142018
Impact of back-gate biasing on effective field and mobility in ultrathin silicon-on-insulator metal-oxide-semiconductor field-effect-transistors
A Ohata, N Rodriguez, C Navarro, L Donetti, F Gamiz, ...
Journal of Applied Physics 113 (14), 144514, 2013
132013
MSDRAM, A2RAM and Z2-FET performance benchmark for 1T-DRAM applications
J Lacord, MS Parihar, C Navarro, FT Wakam, M Bawedin, S Cristoloveanu, ...
2018 International Conference on Simulation of Semiconductor Processes and …, 2018
112018
Properties of 22nm node extremely-thin-SOI MOSFETs
N Rodriguez, F Andrieu, C Navarro, O Faynot, F Gamiz, S Cristoloveanu
IEEE 2011 International SOI Conference, 1-2, 2011
112011
3-D TCAD Study of the Implications of Channel Width and Interface States on FD-SOI Z2-FETs
C Navarro, S Navarro, C Marquez, JL Padilla, P Galy, F Gamiz
IEEE Transactions on Electron Devices 66 (6), 2513-2519, 2019
102019
InGaAs capacitor-less DRAM cells TCAD demonstration
C Navarro, S Navarro, C Marquez, L Donetti, C Sampedro, S Karg, H Riel, ...
IEEE Journal of the Electron Devices Society 6, 884-892, 2018
102018
El sistema no puede realizar la operación en estos momentos. Inténtalo de nuevo más tarde.
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