| Improved carrier injection of AlGaN-based deep ultraviolet light emitting diodes with graded superlattice electron blocking layers B So, J Kim, T Kwak, T Kim, J Lee, U Choi, O Nam RSC advances 8 (62), 35528-35533, 2018 | 40 | 2018 |
| Deep-ultraviolet AlGaN/AlN core-shell multiple quantum wells on AlN nanorods via lithography-free method J Kim, U Choi, J Pyeon, B So, O Nam Scientific reports 8 (1), 935, 2018 | 28 | 2018 |
| Growth behavior of wafer-scale two-dimensional MoS2 layer growth using metal-organic chemical vapor deposition T Kwak, J Lee, B So, U Choi, O Nam Journal of Crystal Growth 510, 50-55, 2019 | 21 | 2019 |
| Diamond Schottky barrier diodes fabricated on sapphire-based freestanding heteroepitaxial diamond substrate T Kwak, J Lee, U Choi, B So, G Yoo, S Kim, O Nam Diamond and Related Materials 114, 108335, 2021 | 18 | 2021 |
| The Effect of AlN Buffer Layer on AlGaN/GaN/AlN Double‐Heterostructure High‐Electron‐Mobility Transistor U Choi, D Jung, K Lee, T Kwak, T Jang, Y Nam, B So, O Nam physica status solidi (a), 2019 | 15 | 2019 |
| High breakdown voltage of boron-doped diamond metal semiconductor field effect transistor grown on freestanding heteroepitaxial diamond substrate U Choi, T Kwak, S Han, SW Kim, O Nam Diamond and Related Materials 121, 108782, 2022 | 11 | 2022 |
| Growth and characterization of heteroepitaxial (001) and (111) diamond on Ir/sapphire structures U Choi, H Shin, T Kwak, SW Kim, O Nam Diamond and Related Materials 121, 108770, 2022 | 8 | 2022 |
| Effect of AlxGa1− xN buffer layer on the structural and electrical properties of AlGaN/GaN/AlxGa1− xN double heterojunction high electron mobility transistor structures Y Nam, U Choi, K Lee, T Jang, D Jung, O Nam Journal of Vacuum Science & Technology B 38 (2), 2020 | 7 | 2020 |
| Direct Current and Radio Frequency Characterizations of AlGaN/AlN/GaN/AlN Double‐Heterostructure High‐Electron Mobility Transistor (DH‐HEMT) on Sapphire U Choi, HS Kim, K Lee, D Jung, T Kwak, T Jang, Y Nam, B So, MJ Kang, ... physica status solidi (a), 2019 | 7 | 2019 |
| Boron‐Doped Single‐Crystal Diamond Growth on Heteroepitaxial Diamond Substrate Using Microwave Plasma Chemical Vapor Deposition T Kwak, J Lee, G Yoo, H Shin, U Choi, B So, S Kim, O Nam physica status solidi (a) 217 (12), 1900973, 2020 | 6 | 2020 |
| Epitaxial growth of deep ultraviolet light emitting diodes with two-step n-AlGaN layer B So, C Cheon, J Lee, J Lee, T Kwak, U Choi, JD Song, J Chang, O Nam Thin Solid Films 708, 138103, 2020 | 5 | 2020 |
| On/off-state noise characteristics in AlGaN/GaN HFET with AlN buffer layer KS Im, U Choi, M Kim, J Choi, HS Kim, HY Cha, SJ An, O Nam Applied Physics Letters 120 (1), 2022 | 4 | 2022 |
| Growth and characterization of MoS2/n-GaN and MoS2/p-GaN vertical heterostructure with wafer scale homogeneity J Lee, H Jang, T Kwak, U Choi, B So, O Nam Solid-State Electronics 165, 107751, 2020 | 4 | 2020 |
| Growth behavior of GaN on AlN for fully coalesced channel of AlN-based HEMT U Choi, K Lee, T Kwak, D Jung, T Jang, Y Nam, B So, HS Kim, HY Cha, ... Japanese Journal of Applied Physics 58 (12), 121003, 2019 | 4 | 2019 |
| Novel in situ self-separation of a 2 in. free-standing m-plane GaN wafer from an m-plane sapphire substrate by HCl chemical reaction etching in hydride vapor-phase epitaxy S Woo, S Lee, U Choi, H Lee, M Kim, J Han, O Nam CrystEngComm 18 (40), 7690-7695, 2016 | 4 | 2016 |
| Diamond Schottky barrier diode fabricated on high-crystalline quality misoriented heteroepitaxial (001) diamond substrate T Kwak, S Han, U Choi, SW Kim, O Nam Diamond and Related Materials 133, 109750, 2023 | 3 | 2023 |
| Electrical characteristics of metal‐insulator diamond semiconductor Schottky barrier diode grown on heteroepitaxial diamond substrate S Han, T Kwak, U Choi, H Kang, G Yoo, S Kim, O Nam physica status solidi (a) 220 (6), 2200680, 2023 | 3 | 2023 |
| Void containing AlN layer grown on AlN nanorods fabricated by polarity selective epitaxy and etching method B So, J Lee, C Cheon, J Lee, U Choi, M Kim, J Song, J Chang, O Nam AIP Advances 11 (4), 2021 | 3 | 2021 |
| Comparison of MoS2/p‐GaN Heterostructures Fabricated via Direct CVD and Transfer Method J Lee, H Jang, T Kwak, U Choi, B So, O Nam physica status solidi (a), 2019 | 3* | 2019 |
| Growth of self-assembled nanovoids embedded AlN layer on a low- temperature buffer by metal organic chemical vapor deposition M Kim, U Choi, K Kim, O Nam Thin Solid Films 752 (139261), 1-6, 2022 | 2 | 2022 |
Okhyun NamTU KOREA (Tech University of Korea)Verified email at tukorea.ac.kr
