Seguir
P Coelho
P Coelho
INL - International Iberian Nanotechnology Laboratory
Dirección de correo verificada de inl.int - Página principal
Título
Citado por
Citado por
Año
Novel multifunctional RKKY coupling layer for ultrathin perpendicular synthetic antiferromagnet
J Chatterjee, S Auffret, R Sousa, P Coelho, IL Prejbeanu, B Dieny
Scientific Reports 8 (1), 11724, 2018
302018
Spin valve devices with synthetic-ferrimagnet free-layer displaying enhanced sensitivity for nanometric sensors
P Coelho, DC Leitao, J Antunes, S Cardoso, PP Freitas
IEEE Transactions on Magnetics 50 (11), 1-4, 2014
282014
Ultra-Compact 100 × 100 μm2 Footprint Hybrid Device with Spin-Valve Nanosensors
DC Leitao, P Coelho, J Borme, S Knudde, S Cardoso, PP Freitas
Sensors 15 (12), 30311-30318, 2015
172015
Magnetic stack, multilayer, tunnel junction, memory point and sensor comprising such a stack
J Chatterjee, PV COELHO, B Dieny, R Sousa, L Prejbeanu
US Patent 10,978,234, 2021
142021
Novel approach for nano-patterning magnetic tunnel junctions stacks at narrow pitch: A route towards high density STT-MRAM applications
VD Nguyen, P Sabon, J Chatterjee, L Tille, PV Coelho, S Auffret, R Sousa, ...
Electron Devices Meeting (IEDM), 2017 IEEE International, 38.5. 1-38.5. 4, 2017
142017
Spin torque efficiency modulation in a double-barrier magnetic tunnel junction with a read/write mode control layer
A Chavent, P Coelho, J Chatterjee, N Strelkov, S Auffret, ...
ACS Applied Electronic Materials 3 (6), 2607-2613, 2021
72021
Double barrier magnetic tunnel junctions for innovative spintronic devices
PV Coelho
Université Grenoble Alpes, 2018
42018
Unconventional Seedless Multilayers with Large Perpendicular Anisotropy for Back-End-of-Line Compatible Spintronic Devices
J Chatterjee, P Coelho, A Chavent, RC Sousa, S Auffret, C Baraduc, ...
ACS Applied Electronic Materials 3 (11), 4774-4780, 2021
2021
Doubles jonctions tunnel magnétiques pour dispositifs spintroniques innovants
PV Coelho
Université Grenoble Alpes (ComUE), 2018
2018
El sistema no puede realizar la operación en estos momentos. Inténtalo de nuevo más tarde.
Artículos 1–9