Francisco Gamiz
Francisco Gamiz
Professor of Electronics
Dirección de correo verificada de ugr.es
TítuloCitado porAño
On the enhanced electron mobility in strained-silicon inversion layers
MV Fischetti, F Gamiz, W Hänsch
Journal of Applied Physics 92 (12), 7320-7324, 2002
2602002
Monte Carlo simulation of double-gate silicon-on-insulator inversion layers: The role of volume inversion
F Gamiz, MV Fischetti
Journal of Applied Physics 89 (10), 5478-5487, 2001
1832001
Surface roughness at the interfaces in fully depleted silicon-on-insulator inversion layers
F Gamiz, JB Roldan, JA Lopez-Villanueva, P Cartujo-Cassinello, ...
Journal of Applied Physics 86 (12), 6854-6863, 1999
1351999
Physical model for trap-assisted inelastic tunneling in metal-oxide-semiconductor structures
F Jiménez-Molinos, A Palma, F Gámiz, J Banqueri, JA Lopez-Villanueva
Journal of Applied Physics 90 (7), 3396-3404, 2001
1032001
Monte Carlo simulation of electron transport properties in extremely thin SOI MOSFET's
F Gámiz, JA López-Villanueva, JB Roldán, JE Carceller, P Cartujo
IEEE Transactions on Electron Devices 45 (5), 1122-1126, 1998
971998
A-RAM: Novel capacitor-less DRAM memory
N Rodriguez, S Cristoloveanu, F Gamiz
2009 IEEE International SOI Conference, 1-2, 2009
962009
A comprehensive model for Coulomb scattering in inversion layers
F Gámiz, JA López‐Villanueva, JA Jiménez‐Tejada, I Melchor, A Palma
Journal of applied physics 75 (2), 924-934, 1994
961994
Effects of the inversion-layer centroid on the performance of double-gate MOSFETs
JA López-Villanueva, P Cartujo-Cassinello, F Gámiz, J Banqueri, ...
IEEE Transactions on Electron Devices 47 (1), 141-146, 2000
922000
A comprehensive study of the corner effects in Pi-gate MOSFETs including quantum effects
FJG Ruiz, A Godoy, F Gamiz, C Sampedro, L Donetti
IEEE Transactions on Electron Devices 54 (12), 3369-3377, 2007
872007
Modeling the centroid and the inversion charge in cylindrical surrounding gate MOSFETs, including quantum effects
JB Roldan, A Godoy, F Gamiz, M Balaguer
IEEE transactions on electron devices 55 (1), 411-416, 2007
862007
Effects of the inversion layer centroid on MOSFET behavior
JA López-Villanueva, P Cartujo-Casinello, J Banqueri, F Gamiz, ...
IEEE Transactions on Electron Devices 44 (11), 1915-1922, 1997
851997
Acoustic phonon confinement in silicon nanolayers: Effect on electron mobility
L Donetti, F Gámiz, JB Roldán, A Godoy
Journal of applied physics 100 (1), 013701, 2006
832006
Electron transport in strained Si inversion layers grown on SiGe-on-insulator substrates
F Gamiz, P Cartujo-Cassinello, JB Roldán, F Jiménez-Molinos
Journal of Applied Physics 92 (1), 288-295, 2002
812002
Role of surface-roughness scattering in double gate silicon-on-insulator inversion layers
F Gamiz, JB Roldán, P Cartujo-Cassinello, JA López-Villanueva, ...
Journal of Applied Physics 89 (3), 1764-1770, 2001
762001
Semiconductor-on-insulator materials for nanoelectronics applications
A Nazarov, JP Colinge, F Balestra, JP Raskin, F Gamiz, VS Lysenko
Springer, 2011
722011
Universality of electron mobility curves in MOSFETs: A Monte Carlo study
F Gamiz, JA López-Villanueva, J Banqueri, JE Carceller, P Cartujo
IEEE Transactions on Electron Devices 42 (2), 258-265, 1995
711995
Direct and trap-assisted elastic tunneling through ultrathin gate oxides
F Jiménez-Molinos, F Gámiz, A Palma, P Cartujo, JA López-Villanueva
Journal of Applied Physics 91 (8), 5116-5124, 2002
692002
A Monte Carlo study on the electron‐transport properties of high‐performance strained‐Si on relaxed Si1−xGex channel MOSFETs
JB Roldán, F Gámiz, JA López‐Villanueva, JE Carceller
Journal of applied physics 80 (9), 5121-5128, 1996
671996
Modeling effects of electron-velocity overshoot in a MOSFET
JB Roldan, F Gamiz, JA Lopez-Villanueva, JE Carceller
IEEE Transactions on Electron Devices 44 (5), 841-846, 1997
581997
Electron mobility in extremely thin single-gate silicon-on-insulator inversion layers
F Gamiz, JB Roldán, P Cartujo-Cassinello, JE Carceller, ...
Journal of applied physics 86 (11), 6269-6275, 1999
571999
El sistema no puede realizar la operación en estos momentos. Inténtalo de nuevo más tarde.
Artículos 1–20