Akira Fujiwara
Akira Fujiwara
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Citado por
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Año
Silicon single-electron devices
Y Takahashi, Y Ono, A Fujiwara, H Inokawa
Journal of physics: Condensed matter 14 (39), R995, 2002
2392002
Nanoampere charge pump by single-electron ratchet using silicon nanowire metal-oxide-semiconductor field-effect transistor
A Fujiwara, K Nishiguchi, Y Ono
Applied Physics Letters 92 (4), 042102, 2008
1942008
A multiple-valued logic and memory with combined single-electron and metal-oxide-semiconductor transistors
H Inokawa, A Fujiwara, Y Takahashi
IEEE Transactions on electron devices 50 (2), 462-470, 2003
1622003
Pauli-spin-blockade transport through a silicon double quantum dot
HW Liu, T Fujisawa, Y Ono, H Inokawa, A Fujiwara, K Takashina, ...
Physical Review B 77 (7), 073310, 2008
1612008
Single electron tunneling transistor with tunable barriers using silicon nanowire metal-oxide-semiconductor field-effect transistor
A Fujiwara, H Inokawa, K Yamazaki, H Namatsu, Y Takahashi, ...
Applied Physics Letters 88 (5), 053121, 2006
1552006
Single electron tunneling transistor with tunable barriers using silicon nanowire metal-oxide-semiconductor field-effect transistor
A Fujiwara, H Inokawa, K Yamazaki, H Namatsu, Y Takahashi, ...
Applied Physics Letters 88 (5), 053121, 2006
1552006
Interconnect-free parallel logic circuits in a single mechanical resonator
I Mahboob, E Flurin, K Nishiguchi, A Fujiwara, H Yamaguchi
Nature communications 2 (1), 1-7, 2011
1532011
Manipulation and detection of single electrons for future information processing
Y Ono, A Fujiwara, K Nishiguchi, H Inokawa, Y Takahashi
Journal of Applied Physics 97 (3), 2, 2005
1502005
Valley polarization in Si (100) at zero magnetic field
K Takashina, Y Ono, A Fujiwara, Y Takahashi, Y Hirayama
Physical review letters 96 (23), 236801, 2006
1442006
Current quantization due to single-electron transfer in Si-wire charge-coupled devices
A Fujiwara, NM Zimmerman, Y Ono, Y Takahashi
Applied physics letters 84 (8), 1323-1325, 2004
1392004
Multigate single-electron transistors and their application to an exclusive-OR gate
Y Takahashi, A Fujiwara, K Yamazaki, H Namatsu, K Kurihara, K Murase
Applied Physics Letters 76 (5), 637-639, 2000
1252000
Phonon lasing in an electromechanical resonator
I Mahboob, K Nishiguchi, A Fujiwara, H Yamaguchi
Physical review letters 110 (12), 127202, 2013
1232013
Conductance modulation by individual acceptors in Si nanoscale field-effect transistors
Y Ono, K Nishiguchi, A Fujiwara, H Yamaguchi, H Inokawa, Y Takahashi
Applied Physics Letters 90 (10), 102106, 2007
1142007
High inversion current in silicon nanowire field effect transistors
SM Koo, A Fujiwara, JP Han, EM Vogel, CA Richter, JE Bonevich
Nano Letters 4 (11), 2197-2201, 2004
1112004
Excellent charge offset stability in a Si-based single-electron tunneling transistor
NM Zimmerman, WH Huber, A Fujiwara, Y Takahashi
Applied Physics Letters 79 (19), 3188-3190, 2001
1092001
Manipulation of elementary charge in a silicon charge-coupled device
A Fujiwara, Y Takahashi
Nature 410 (6828), 560-562, 2001
1082001
Involvement of the Sonic hedgehog gene in chick feather formation
T Nohno, Y Kawakami, H Ohuchi, A Fujiwara, H Yoshioka, S Noji
Biochemical and biophysical research communications 206 (1), 33-39, 1995
1031995
Self-diffusion of Si in thermally grown under equilibrium conditions
T Takahashi, S Fukatsu, KM Itoh, M Uematsu, A Fujiwara, H Kageshima, ...
Journal of applied physics 93 (6), 3674-3676, 2003
962003
Spectral blue shift of photoluminescence in strained‐layer Si1−xGex/Si quantum well structures grown by gas‐source Si molecular beam epitaxy
S Fukatsu, H Yoshida, A Fujiwara, Y Takahashi, Y Shiraki, R Ito
Applied physics letters 61 (7), 804-806, 1992
861992
A silicon nanowire ion-sensitive field-effect transistor with elementary charge sensitivity
N Clément, K Nishiguchi, JF Dufrêche, D Guerin, A Fujiwara, D Vuillaume
Applied Physics Letters 98 (1), 014104, 2011
802011
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Artículos 1–20