| Investigation of the multilevel capability of TiN/Ti/HfO2/W resistive switching devices by sweep and pulse programming S Poblador, MB Gonzalez, F Campabadal Microelectronic Engineering 187, 148-153, 2018 | 47 | 2018 |
| Variability in resistive memories JB Roldán, E Miranda, D Maldonado, AN Mikhaylov, NV Agudov, ... Advanced Intelligent Systems 5 (6), 2200338, 2023 | 40 | 2023 |
| Methodology for the characterization and observation of filamentary spots in HfOx-based memristor devices S Poblador, M Maestro-Izquierdo, M Zabala, MB González, ... Microelectronic Engineering 223, 111232, 2020 | 25 | 2020 |
| Single and complex devices on three topological configurations of HfO2 based RRAM ÓG Ossorio, S Poblador, G Vinuesa, S Dueñas, H Castán, ... 2020 IEEE Latin America Electron Devices Conference (LAEDC), 1-4, 2020 | 4 | 2020 |
| Resistive switching with bipolar characteristics in TiN/Ti/HfO2/W devices S Poblador, MC Acero, MB González, F Campabadal 2017 Spanish Conference on Electron Devices (CDE), 1-4, 2017 | 4 | 2017 |
| Tunability Properties and Compact Modeling of HfO2-Based Complementary Resistive Switches Using a Three-Terminal Subcircuit M Saludes-Tapia, S Poblador, MB Gonzalez, F Campabadal, J Sune, ... IEEE Transactions on Electron Devices 68 (12), 5981-5988, 2021 | 3 | 2021 |
| Synaptic devices based on HfO2 memristors MB González, M Maestro-Izquierdo, S Poblador, M Zabala, ... Mem-elements for Neuromorphic Circuits with Artificial Intelligence …, 2021 | 1 | 2021 |
| Impact of the temperature on the conductive filament morphology in HfO2-based RRAM G Vinuesa, H García, S Poblador, MB González, F Campabadal, ... Materials Letters 357, 135699, 2024 | | 2024 |
| Diseño, fabricación y caracterización de dispositivos de conmutación resistiva basados en estructuras TiN/Ti/HfO2/W S Poblador Cester Universidad Autónoma de Barcelona, 2021 | | 2021 |
| Single and complex devices on three topological configurations of HfO2 based RRAM Ó González Ossorio, S Poblador Cester, G Vinuesa Sanz, ... IEEE Xplore, 2020 | | 2020 |
| Physical characterization of filamentary structures in TiN/Ti/HfO2/W memristor devices S Poblador, M Maestro, MC Acero Leal, MB González, F Campabadal | | 2018 |
| Electrical characterization and resistive switching behavior of HfO2/Al2O3 multilayer stacks M Maestro, S Poblador, M Zabala, MC Acero Leal, MB González, ... | | 2018 |
| Assessment of resistive switching characteristics on different HfO2/Al2O3 dielectric stacks M Maestro, S Poblador, M Zabala, MC Acero Leal, MB González, ... | | 2018 |
| Electrical characterization of TiN/Ti/HfO2/W resistive switching devices S Poblador, MC Acero Leal, MM Mallol, MB González, F Campabadal | | 2017 |
| Investigation of the multilevel capability of TiN/Ti/HfO2/W RRAM devices by pulse programming MB González, S Poblador, MM Mallol, J Calvo, M Zabala, MC Acero Leal, ... | | 2017 |
| Caracterización, integración y comportamiento de nuevos materiales tipo oxiapatita en una pila de combustible de óxido sólido microtubular S Poblador Universidad de Zaragoza, 2014 | | 2014 |
| Symmetrical cells of Pr2NiO4+ δ on electrolytes with apatite-type structure. Fabrication of microtubular apatite-based SOFC A Orera, J Silva-Treviño, MA Laguna-Bercero, S Poblador, RI Merino | | 2013 |
Mireia Bargalló GonzalezInstitut de Microelectrònica de Barcelona IMB-CNM (CSIC)Verified email at csic.es
