| Effect of the built-in electric field on optical and electrical properties of AlGaAs/InGaAs/GaAs P-HEMT nanoheterostructures RA Khabibullin, IS Vasil’evskii, GB Galiev, EA Klimov, DS Ponomarev, ... Semiconductors 45, 657-662, 2011 | 23 | 2011 |
| Effect of (1 0 0) GaAs substrate misorientation on electrophysical parameters, structural properties and surface morphology of metamorphic HEMT nanoheterostructures InGaAs/InAlAs GB Galiev, IS Vasil'evskii, EА Klimov, SS Pushkarev, AN Klochkov, ... Journal of crystal growth 392, 11-19, 2014 | 22 | 2014 |
| Energy spectrum and thermal properties of a terahertz quantum-cascade laser based on the resonant-phonon depopulation scheme RA Khabibullin, NV Shchavruk, AN Klochkov, IA Glinskiy, NV Zenchenko, ... Semiconductors 51, 514-519, 2017 | 18 | 2017 |
| Specific features of the photoluminescence of HEMT nanoheterostructures containing a composite InAlAs/InGaAs/InAs/InGaAs/InAlAs quantum well GB Galiev, IS Vasil’evskii, EA Klimov, AN Klochkov, DV Lavruhin, ... Semiconductors 49, 234-241, 2015 | 18 | 2015 |
| Improved InGaAs and InGaAs/InAlAs photoconductive antennas based on (111)-oriented substrates K Kuznetsov, A Klochkov, A Leontyev, E Klimov, S Pushkarev, G Galiev, ... Electronics 9 (3), 495, 2020 | 17 | 2020 |
| Terahertz quantum-cascade laser based on the resonant-phonon depopulation scheme RA Khabibullin, NV Shchavruk, AY Pavlov, AN Klochkov, DS Ponomarev, ... International Journal of High Speed Electronics and Systems 25 (03n04), 1640022, 2016 | 14 | 2016 |
| Terahertz-radiation generation in low-temperature InGaAs epitaxial films on (100) and (411) InP substrates GB Galiev, MM Grekhov, GK Kitaeva, EA Klimov, AN Klochkov, ... Semiconductors 51, 310-317, 2017 | 13 | 2017 |
| Ultrafast Dynamics of Photoexcited Charge Carriers in In0.53Ga0.47As/In0.52Al0.48As Superlattices under Femtosecond Laser Excitation DS Ponomarev, RA Khabibullin, AN Klochkov, AE Yachmenev, ... Semiconductors 52, 864-869, 2018 | 10 | 2018 |
| Photoconductive antennas based on epitaxial films In0. 5Ga0. 5As on GaAs (1 1 1) A and (1 0 0) A substrates with a metamorphic buffer KA Kuznetsov, GB Galiev, GK Kitaeva, VV Kornienko, EA Klimov, ... Laser Physics Letters 15 (7), 076201, 2018 | 10 | 2018 |
| Electrophysical and structural properties of the composite quantum wells In0. 52Al0. 48As/InxGa1− xAs/In0. 52Al0. 48As with ultrathin InAs inserts GB Galiev, IS Vasil'evskii, EA Klimov, SS Pushkarev, AN Klochkov, ... Journal of Materials Research 30 (20), 3020-3025, 2015 | 10* | 2015 |
| Photoluminescence studies of In0.7Al0.3As/In0.75Ga0.25As/In0.7Al0.3As metamorphic heterostructures on GaAs substrates GB Galiev, EA Klimov, AN Klochkov, DV Lavruhin, SS Pushkarev, ... Semiconductors 48, 640-648, 2014 | 10 | 2014 |
| New structure for photoconductive antennas based on {LTG-GaAs/GaAs: Si} superlattice on GaAs (111) a substrate GB Galiev, IN Trunkin, AL Vasiliev, IS Vasil’evskii, AN Vinichenko, ... Crystallography Reports 64, 205-211, 2019 | 9 | 2019 |
| Photoluminescence studies of Si-doped epitaxial GaAs films grown on (100)-and (111) A-oriented GaAs substrates at lowered temperatures GB Galiev, EA Klimov, AN Klochkov, SS Pushkarev, PP Maltsev Semiconductors 52, 376-382, 2018 | 9 | 2018 |
| Ultrafast carrier dynamics in LT-GaAs doped with Si delta layers DI Khusyainov, C Dekeyser, AM Buryakov, ED Mishina, GB Galiev, ... International Journal of Modern Physics B 31 (27), 1750195, 2017 | 9 | 2017 |
| Electron effective masses, nonparabolicity and scattering times in one side delta-doped PHEMT AlGaAs/InGaAs/GaAs quantum wells at high electron density limit DA Safonov, AN Klochkov, AN Vinichenko, YD Sibirmovsky, NI Kargin, ... Physica E: Low-Dimensional Systems and Nanostructures 133, 114787, 2021 | 8 | 2021 |
| Pulsed terahertz radiation from a double-barrier resonant tunneling diode biased into self-oscillation regime GK Rasulova, IV Pentin, YB Vakhtomin, KV Smirnov, RA Khabibullin, ... Journal of Applied Physics 128 (22), 2020 | 7 | 2020 |
| Photoluminescence properties of modulation-doped In x Al 1–x As/In y Ga 1–y As/In x Al 1–x As structures with strained inas and gaas nanoinserts in the quantum well GB Galiev, IS Vasil’evskii, EA Klimov, AN Klochkov, DV Lavruhin, ... Semiconductors 49, 1207-1217, 2015 | 6 | 2015 |
| THz radiation of photoconductive antennas based on {LT-GaAa/GaAa: Si} superlattice structures AN Klochkov, EA Klimov, PM Solyankin, MR Konnikova, IS Vasil’evskii, ... Optics and Spectroscopy 128, 1010-1017, 2020 | 5 | 2020 |
| Electrical and structural characteristics of metamorphic In0.38Al0.62As/In0.37Ga0.63As/In0.38Al0.62As HEMT nanoheterostructures GB Galiev, EA Klimov, AN Klochkov, PP Maltsev, SS Pushkarev, ... Crystallography Reports 58, 914-919, 2013 | 5 | 2013 |
| Application of photoluminescence spectroscopy to studies of In0.38Al0.62As/In0.38Ga0.62As/GaAs metamorphic nanoheterostructures GB Galiev, IS Vasil’evskii, EA Klimov, AN Klochkov, DV Lavruhin, ... Semiconductors 48, 883-890, 2014 | 4 | 2014 |
Galib GalievInstitute of Ultrahigh Frequency Semiconductor Electronics of RAS, MoscowVerified email at isvch.ru
