ZnO transparent conducting films deposited by pulsed laser deposition for solar cell applications K Matsubara, P Fons, K Iwata, A Yamada, K Sakurai, H Tampo, S Niki
Thin Solid Films 431, 369-372, 2003
348 2003 Uniaxial locked epitaxy of ZnO on the face of sapphire P Fons, K Iwata, A Yamada, K Matsubara, S Niki, K Nakahara, T Tanabe, ...
Applied Physics Letters 77 (12), 1801-1803, 2000
271 2000 Growth of high-quality epitaxial ZnO films on α-Al2O3 P Fons, K Iwata, S Niki, A Yamada, K Matsubara
Journal of Crystal Growth 201, 627-632, 1999
255 1999 Nitrogen-induced defects in ZnO: N grown on sapphire substrate by gas source MBE K Iwata, P Fons, A Yamada, K Matsubara, S Niki
Journal of Crystal Growth 209 (2-3), 526-531, 2000
230 2000 Interactions between gallium and nitrogen dopants in ZnO films grown by radical-source molecular-beam epitaxy K Nakahara, H Takasu, P Fons, A Yamada, K Iwata, K Matsubara, ...
Applied physics letters 79 (25), 4139-4141, 2001
190 2001 ZnO growth on Si by radical source MBE K Iwata, P Fons, S Niki, A Yamada, K Matsubara, K Nakahara, T Tanabe, ...
Journal of Crystal Growth 214, 50-54, 2000
172 2000 Fabrication of wide-gap Cu (In1− xGax) Se2 thin film solar cells: a study on the correlation of cell performance with highly resistive i-ZnO layer thickness S Ishizuka, K Sakurai, A Yamada, K Matsubara, P Fons, K Iwata, ...
Solar energy materials and solar cells 87 (1-4), 541-548, 2005
159 2005 Band-gap modified Al-doped Zn1− xMgxO transparent conducting films deposited by pulsed laser deposition K Matsubara, H Tampo, H Shibata, A Yamada, P Fons, K Iwata, S Niki
Applied physics letters 85 (8), 1374-1376, 2004
153 2004 Gas source molecular beam epitaxy growth of GaN on C-, A-, R-and M-plane sapphire and silica glass substrates K Iwata, HA Asami, RKR Kuroiwa, SGS Gonda
Japanese journal of applied physics 36 (6A), L661, 1997
126 1997 Uniaxial locked growth of high-quality epitaxial ZnO films on (1120) α-Al2O3 P Fons, K Iwata, S Niki, A Yamada, K Matsubara, M Watanabe
Journal of Crystal Growth 209 (2-3), 532-536, 2000
125 2000 Growth of undoped ZnO films with improved electrical properties by radical source molecular beam epitaxy KNK Nakahara, TTT Tanabe, HTH Takasu, PFP Fons, KIK Iwata, ...
Japanese Journal of Applied Physics 40 (1R), 250, 2001
122 2001 High quality GaN growth on (0001) sapphire by ion-removed electron cyclotron resonance molecular beam epitaxy and first observation of (2× 2) and (4× 4) reflection high energy … K Iwata, H Asahi, SJ Yu, K Asami, H Fujita, MFM Fushida, SGS Gonda
Japanese journal of applied physics 35 (3A), L289, 1996
116 1996 Degenerate layers in epitaxial ZnO films grown on sapphire substrates H Tampo, A Yamada, P Fons, H Shibata, K Matsubara, K Iwata, S Niki, ...
Applied Physics Letters 84 (22), 4412-4414, 2004
113 2004 Improved external efficiency InGaN-based light-emitting diodes with transparent conductive Ga-doped ZnO as p-electrodes K Nakahara, K Tamura, M Sakai, D Nakagawa, N Ito, M Sonobe, ...
Japanese journal of applied physics 43 (2A), L180, 2004
111 2004 Growth of N-doped and Ga+ N-codoped ZnO films by radical source molecular beam epitaxy K Nakahara, H Takasu, P Fons, A Yamada, K Iwata, K Matsubara, ...
Journal of crystal growth 237, 503-508, 2002
109 2002 Optical properties of GaN layers grown on C -, A -, R -, and M -plane sapphire substrates by gas source molecular beam epitaxy S Tripathy, RK Soni, H Asahi, K Iwata, R Kuroiwa, K Asami, S Gonda
Journal of applied physics 85 (12), 8386-8399, 1999
97 1999 New III–V compound semiconductors TlInGaP for 0.9 µm to over 10 µm wavelength range laser diodes and their first successful growth H Asahi, K Yamamoto, K Iwata, SG Oe
Japanese journal of applied physics 35 (7B), L876, 1996
92 * 1996 Room-temperature deposition of Al-doped ZnO films by oxygen radical-assisted pulsed laser deposition K Matsubara, P Fons, K Iwata, A Yamada, S Niki
Thin Solid Films 422 (1-2), 176-179, 2002
90 2002 Improvement of Electrical Properties in ZnO Thin Films Grown by Radical Source (RS)‐MBE K Iwata, P Fons, S Niki, A Yamada, K Matsubara, K Nakahara, H Takasu
physica status solidi (a) 180 (1), 287-292, 2000
77 2000 Improvement of ZnO TCO film growth for photovoltaic devices by reactive plasma deposition (RPD) K Iwata, T Sakemi, A Yamada, P Fons, K Awai, T Yamamoto, S Shirakata, ...
Thin Solid Films 480, 199-203, 2005
76 2005