Positron beams for solids and surfaces A Van Veen, H Schut, J De Vries, RA Hakvoort, MR Ijpma, PJ Schultz, ...
AIP Conf. Proc 218, 171-196, 1990
359 1990 Quantum confinement in Si and Ge nanostructures: Theory and experiment EG Barbagiovanni, DJ Lockwood, PJ Simpson, LV Goncharova
Applied Physics Reviews 1 (1), 2014
248 2014 Infrared spectroscopy of hydrogen in ZnO MD McCluskey, SJ Jokela, KK Zhuravlev, PJ Simpson, KG Lynn
Applied Physics Letters 81 (20), 3807-3809, 2002
239 2002 Quantum confinement in Si and Ge nanostructures EG Barbagiovanni, DJ Lockwood, PJ Simpson, LV Goncharova
Journal of Applied Physics 111 (3), 2012
222 2012 Superfast timing performance from ZnO scintillators PJ Simpson, R Tjossem, AW Hunt, KG Lynn, V Munné
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2003
113 2003 Detection of current‐induced vacancies in thin aluminum–copper lines using positrons P Asoka‐Kumar, K O’brien, KG Lynn, PJ Simpson, KP Rodbell
Applied physics letters 68 (3), 406-408, 1996
112 1996 Vacancy generation resulting from electrical deactivation of arsenic DW Lawther, U Myler, PJ Simpson, PM Rousseau, PB Griffin, JD Plummer
Applied physics letters 67 (24), 3575-3577, 1995
106 1995 Ion-beam-induced damage in silicon studied using variable-energy positrons, Rutherford backscattering, and infrared absorption PJ Simpson, M Vos, IV Mitchell, C Wu, PJ Schultz
Physical Review B 44 (22), 12180, 1991
96 1991 Impurity gettering to secondary defects created by MeV ion implantation in silicon RA Brown, O Kononchuk, GA Rozgonyi, S Koveshnikov, AP Knights, ...
Journal of applied physics 84 (5), 2459-2465, 1998
94 1998 Survey of elemental specificity in positron annihilation peak shapes U Myler, PJ Simpson
Physical Review B 56 (22), 14303, 1997
91 1997 X-ray-and neutron-scattering measurements of two length scales in the magnetic critical fluctuations of holmium TR Thurston, G Helgesen, JP Hill, D Gibbs, BD Gaulin, PJ Simpson
Physical Review B 49 (22), 15730, 1994
75 1994 Electronic structure study of ion-implanted Si quantum dots in a SiO matrix: Analysis of quantum confinement theories EG Barbagiovanni, LV Goncharova, PJ Simpson
Physical Review B 83 (3), 035112, 2011
64 2011 Chemical information in positron annihilation spectra U Myler, RD Goldberg, AP Knights, DW Lawther, PJ Simpson
Applied physics letters 69 (22), 3333-3335, 1996
61 1996 Microvoid formation in low-temperature molecular-beam-epitaxy-grown silicon DD Perovic, GC Weatherly, PJ Simpson, PJ Schultz, TE Jackman, ...
Physical Review B 43 (17), 14257, 1991
59 1991 Defect structure of carbon rich a-SiC: H films and the influence of gas and heat treatments T Friessnegg, M Boudreau, P Mascher, A Knights, PJ Simpson, W Puff
Journal of applied physics 84 (2), 786-795, 1998
50 1998 Annealing behavior of low-energy ion-implanted phosphorus in silicon S Ruffell, IV Mitchell, PJ Simpson
Journal of applied physics 97 (12), 2005
47 2005 Defect studies of ZnSe nanowires U Philipose, A Saxena, HE Ruda, PJ Simpson, YQ Wang, KL Kavanagh
Nanotechnology 19 (21), 215715, 2008
41 2008 Observation of fluorine-vacancy complexes in silicon PJ Simpson, Z Jenei, P Asoka-Kumar, RR Robison, ME Law
Applied physics letters 85 (9), 1538-1540, 2004
41 2004 Experimental identification of nitrogen-vacancy complexes in nitrogen implanted silicon LS Adam, ME Law, S Szpala, PJ Simpson, D Lawther, O Dokumaci, ...
Applied Physics Letters 79 (5), 623-625, 2001
41 2001 Effect of annealing on the defect structure in a ‐SiC:H films T Friessnegg, M Boudreau, J Brown, P Mascher, PJ Simpson, W Puff
Journal of applied physics 80 (4), 2216-2223, 1996
38 1996