andrea redaelli
andrea redaelli
STMicroelectronics Technology R&D
Verified email at st.com
Title
Cited by
Cited by
Year
Reliability study of phase-change nonvolatile memories
A Pirovano, A Redaelli, F Pellizzer, F Ottogalli, M Tosi, D Ielmini, ...
IEEE Transactions on Device and Materials Reliability 4 (3), 422-427, 2004
4722004
Electronic switching effect and phase-change transition in chalcogenide materials
A Redaelli, A Pirovano, F Pellizzer, AL Lacaita, D Ielmini, R Bez
IEEE Electron Device Letters 25 (10), 684-686, 2004
3452004
Electrothermal and phase-change dynamics in chalcogenide-based memories
AL Lacaita, A Redaelli, D Ielmini, F Pellizzer, A Pirovano, A Benvenuti, ...
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 …, 2004
3322004
Threshold switching and phase transition numerical models for phase change memory simulations
A Redaelli, A Pirovano, A Benvenuti, AL Lacaita
Journal of Applied Physics 103 (11), 6, 2008
2242008
Modeling of programming and read performance in phase-change memories—Part I: Cell optimization and scaling
U Russo, D Ielmini, A Redaelli, AL Lacaita
IEEE transactions on electron devices 55 (2), 506-514, 2008
1332008
Intrinsic data retention in nanoscaled phase-change memories—Part I: Monte Carlo model for crystallization and percolation
U Russo, D Ielmini, A Redaelli, AL Lacaita
IEEE transactions on electron devices 53 (12), 3032-3039, 2006
1022006
A physics-based model of electrical conduction decrease with time in amorphous
M Boniardi, A Redaelli, A Pirovano, I Tortorelli, D Ielmini, F Pellizzer
Journal of Applied Physics 105 (8), 084506, 2009
822009
The race of phase change memories to nanoscale storage and applications
AL Lacaita, A Redaelli
Microelectronic Engineering 109, 351-356, 2013
792013
Intrinsic data retention in nanoscaled phase-change memories—Part II: Statistical analysis and prediction of failure time
A Redaelli, D Ielmini, U Russo, AL Lacaita
IEEE transactions on electron devices 53 (12), 3040-3046, 2006
792006
A phase change memory compact model for multilevel applications
D Ventrice, P Fantini, A Redaelli, A Pirovano, A Benvenuti, F Pellizzer
IEEE Electron Device Letters 28 (11), 973-975, 2007
692007
Statistics of resistance drift due to structural relaxation in phase-change memory arrays
M Boniardi, D Ielmini, S Lavizzari, AL Lacaita, A Redaelli, A Pirovano
IEEE Transactions on Electron Devices 57 (10), 2690-2696, 2010
652010
Memory including a selector switch on a variable resistance memory cell
A Redaelli, A Pirovano
US Patent 9,196,355, 2015
622015
Phase change memory cell with self-aligned vertical heater
A Pirovano, G Servalli, F Pellizzer, A Redaelli
US Patent App. 12/481,496, 2010
612010
Revisiting the local structure in Ge-Sb-Te based chalcogenide superlattices
B Casarin, A Caretta, J Momand, BJ Kooi, MA Verheijen, V Bragaglia, ...
Scientific reports 6 (1), 1-8, 2016
602016
Experimental investigation of transport properties in chalcogenide materials through noise measurements
P Fantini, A Pirovano, D Ventrice, A Redaelli
Applied physics letters 88 (26), 263506, 2006
542006
Modeling of programming and read performance in phase-change memories—Part II: Program disturb and mixed-scaling approach
U Russo, D Ielmini, A Redaelli, AL Lacaita
IEEE transactions on electron devices 55 (2), 515-522, 2008
512008
Optimization metrics for phase change memory (PCM) cell architectures
M Boniardi, A Redaelli, C Cupeta, F Pellizzer, L Crespi, G D'Arrigo, ...
2014 IEEE International Electron Devices Meeting, 29.1. 1-29.1. 4, 2014
502014
Memory cells having heaters with angled sidewalls
A Redaelli, G Servalli, P Petruzza, C Perrone
US Patent 8,962,384, 2015
492015
Self-selecting PCM device not requiring a dedicated selector transistor
A Redaelli, A Pirovano
US Patent 8,847,186, 2014
482014
Low temperature rectifying junctions for crossbar non-volatile memory devices
G Tallarida, N Huby, B Kutrzeba-Kotowska, S Spiga, M Arcari, G Csaba, ...
2009 IEEE International Memory Workshop, 1-3, 2009
382009
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