Damien Deleruyelle
Damien Deleruyelle
Institut des Nanotechnologies de Lyon (INL)
Dirección de correo verificada de insa-lyon.fr
TítuloCitado porAño
Experimental and theoretical study of electrode effects in HfO2based RRAM
C Cagli, J Buckley, V Jousseaume, T Cabout, A Salaun, H Grampeix, ...
2011 International Electron Devices Meeting, 28.7. 1-28.7. 4, 2011
Robust Compact Model for Bipolar Oxide-Based Resistive Switching Memories
M Bocquet, D Deleruyelle, H Aziza, C Muller, JM Portal, T Cabout, ...
IEEE Transactions on Electron Devices 61 (3), 674-681, 2014
Synchronous non-volatile logic gate design based on resistive switching memories
W Zhao, M Moreau, E Deng, Y Zhang, JM Portal, JO Klein, M Bocquet, ...
IEEE Transactions on Circuits and Systems 61 (2), 443-454, 2014
Self-consistent physical modeling of set/reset operations in unipolar resistive-switching memories
M Bocquet, D Deleruyelle, C Muller, JM Portal
Applied Physics Letters 98 (26), 263507, 2011
Degradation of floating-gate memory reliability by few electron phenomena
G Molas, D Deleruyelle, B De Salvo, G Ghibaudo, M GelyGely, L Perniola, ...
IEEE Transactions on Electron Devices 53 (10), 2610-2619, 2006
Reduction of fixed charges in atomic layer deposited Al2O3 dielectrics
J Buckley, B De Salvo, D Deleruyelle, M Gely, G Nicotra, S Lombardo, ...
Microelectronic engineering 80, 210-213, 2005
Resistance controllability and variability improvement in a TaOx-based resistive memory for multilevel storage application
A Prakash, D Deleruyelle, J Song, M Bocquet, H Hwang
Applied Physics Letters 106 (23), 233104, 2015
Accurate analysis of parasitic current overshoot during forming operation in RRAMs
S Tirano, L Perniola, J Buckley, J Cluzel, V Jousseaume, C Muller, ...
Microelectronic engineering 88 (7), 1129-1132, 2011
Impact of few electron phenomena on floating-gate memory reliability
G Molas, D Deleruyelle, B De Salvo, G Ghibaudo, M Gely, S Jacob, ...
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 …, 2004
Switching of nanosized filaments in NiO by conductive atomic force microscopy
F Nardi, D Deleruyelle, S Spiga, C Muller, B Bouteille, D Ielmini
Journal of Applied Physics 112 (6), 064310, 2012
Investigation of the potentialities of Vertical Resistive RAM (VRRAM) for neuromorphic applications
G Piccolboni, G Molas, JM Portal, R Coquand, M Bocquet, D Garbin, ...
2015 IEEE International Electron Devices Meeting (IEDM), 17.2. 1-17.2. 4, 2015
Design and analysis of crossbar architecture based on complementary resistive switching non-volatile memory cells
WS Zhao, JM Portal, W Kang, M Moreau, Y Zhang, H Aziza, JO Klein, ...
Journal of Parallel and Distributed Computing 74 (6), 2484-2496, 2014
Low-power resistive switching in Au/NiO/Au nanowire arrays
S Brivio, G Tallarida, D Perego, S Franz, D Deleruyelle, C Muller, S Spiga
Applied Physics Letters 101 (22), 223510, 2012
Compact modeling solutions for oxide-based resistive switching memories (OxRAM)
M Bocquet, H Aziza, W Zhao, Y Zhang, S Onkaraiah, C Muller, M Reyboz, ...
Journal of Low Power Electronics and Applications 4 (1), 1-14, 2014
An Overview of Non-Volatile Flip-Flops Based on Emerging Memory Technologies
JM Portal, M Bocquet, M Moreau, H Aziza, D Deleruyelle, Y Zhang, ...
Journal of Elecronic Science and Technology 12 (2), 173-181, 2014
Electrical nanocharacterization of copper tetracyanoquinodimethane layers dedicated to resistive random access memories
D Deleruyelle, C Muller, J Amouroux, R Müller
Applied Physics Letters 96 (26), 263504, 2010
Direct observation at nanoscale of resistance switching in NiO layers by conductive-atomic force microscopy
D Deleruyelle, C Dumas, M Carmona, C Muller, S Spiga, M Fanciulli
Applied physics express 4 (5), 051101, 2011
Ge2Sb2Te5 layer used as solid electrolyte in conductive-bridge memory devices fabricated on flexible substrate
D Deleruyelle, M Putero, T Ouled-Khachroum, M Bocquet, MV Coulet, ...
Solid-State Electronics 79, 159-165, 2013
Resistive switching characteristics of NiO films deposited on top of W or Cu pillar bottom electrodes
C Dumas, D Deleruyelle, A Demolliens, C Muller, S Spiga, E Cianci, ...
Thin Solid Films 519 (11), 3798-3803, 2011
A new memory concept: the nano-multiple-tunnel-junction memory with embedded Si nano-crystals
D Deleruyelle, C Le Royer, B DeSalvo, G Le Carval, M Gely, T Baron, ...
Microelectronic engineering 72 (1-4), 399-404, 2004
El sistema no puede realizar la operación en estos momentos. Inténtalo de nuevo más tarde.
Artículos 1–20