94-GHz large-signal operation of AlInN/GaN high-electron-mobility transistors on silicon with regrown ohmic contacts D Marti, S Tirelli, V Teppati, L Lugani, JF Carlin, M Malinverni, ...
IEEE Electron device letters 36 (1), 17-19, 2014
82 2014 Faceting of InAs− InSb heterostructured nanowires L Lugani, D Ercolani, F Rossi, G Salviati, F Beltram, L Sorba
Crystal growth & design 10 (9), 4038-4042, 2010
59 2010 Ultrathin Body InAlN/GaN HEMTs for High-Temperature (600 P Herfurth, D Maier, L Lugani, JF Carlin, R Rosch, Y Men, N Grandjean, ...
IEEE electron device letters 34 (4), 496-498, 2013
48 2013 Modeling of InAs–InSb nanowires grown by Au-assisted chemical beam epitaxy L Lugani, D Ercolani, L Sorba, NV Sibirev, MA Timofeeva, VG Dubrovskii
Nanotechnology 23 (9), 095602, 2012
45 2012 AlInN-based HEMTs for large-signal operation at 40 GHz S Tirelli, L Lugani, D Marti, JF Carlin, N Grandjean, CR Bolognesi
IEEE transactions on electron devices 60 (10), 3091-3098, 2013
40 2013 Leakage mechanisms in InAlN based heterostructures L Lugani, MA Py, JF Carlin, N Grandjean
Journal of Applied Physics 115 (7), 2014
38 2014 n+-GaN grown by ammonia molecular beam epitaxy: Application to regrown contacts L Lugani, M Malinverni, S Tirelli, D Marti, E Giraud, JF Carlin, ...
Applied Physics Letters 105 (20), 2014
33 2014 Ultrathin InAlN/GaN heterostructures on sapphire for high on/off current ratio high electron mobility transistors L Lugani, JF Carlin, MA Py, D Martin, F Rossi, G Salviati, P Herfurth, ...
Journal of Applied Physics 113 (21), 2013
27 2013 GaN-on-insulator technology for high-temperature electronics beyond 400° C P Herfurth, D Maier, Y Men, R Rösch, L Lugani, JF Carlin, N Grandjean, ...
Semiconductor science and technology 28 (7), 074026, 2013
25 2013 D Marti, L Lugani, JF Carlin, M Malinverni, N Grandjean, CR Bolognesi
IEEE Electron Device Letters 37 (8), 1025-1028, 2016
22 2016 Synthesis of AlAs and AlAs–GaAs core–shell nanowires A Li, D Ercolani, L Lugani, L Nasi, F Rossi, G Salviati, F Beltram, L Sorba
Crystal growth & design 11 (9), 4053-4058, 2011
19 2011 Thermal stability and in situ SiN passivation of InAlN/GaN high electron mobility heterostructures L Lugani, JF Carlin, MA Py, N Grandjean
Applied Physics Letters 105 (11), 2014
18 2014 Explanation of threshold voltage scaling in enhancement-mode InAlN/AlN–GaN metal oxide semiconductor high electron mobility transistors on Si substrates A Alexewicz, C Ostermaier, C Henkel, O Bethge, JF Carlin, L Lugani, ...
Thin Solid Films 520 (19), 6230-6232, 2012
18 2012 Growth mechanism of InAs–InSb heterostructured nanowires grown by chemical beam epitaxy L Lugani, D Ercolani, F Beltram, L Sorba
Journal of crystal growth 323 (1), 304-306, 2011
16 2011 Shallow donor and deep DX-like center in InAlN layers nearly lattice-matched to GaN MA Py, L Lugani, Y Taniyasu, JF Carlin, N Grandjean
Physical Review B 90 (11), 115208, 2014
15 2014 Capacitance behavior of InAlN Schottky diodes in presence of large concentrations of shallow and deep states related to oxygen MA Py, L Lugani, Y Taniyasu, JF Carlin, N Grandjean
Journal of Applied Physics 117 (18), 2015
11 2015 AlInN/GaN HEMTs on SiC and on Silicon with Regrown Ohmic Contacts by SelectiveAmmonia MBE NG Carlin, CR Bolognesi
9 2005 Inductive position sensor W Kluge, L Lugani
US Patent 10,845,215, 2020
8 2020 AlN-capped AlInN/GaN high electron mobility transistors with 4.5 W/mm output power at 40 GHz S Tirelli, D Marti, L Lugani, JF Carlin, N Grandjean, CR Bolognesi
Japanese Journal of Applied Physics 52 (8S), 08JN16, 2013
8 2013 Hybrid magnetic–inductive angular sensor with 360° range and stray-field immunity B Brajon, L Lugani, G Close
Sensors 22 (6), 2153, 2022
7 2022 
Nicolas GrandjeanInstitute of Physics, EPFLDirección de correo verificada de epfl.ch
