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Mads Eide Ingebrigtsen
Mads Eide Ingebrigtsen
University of Oslo
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Iron and intrinsic deep level states in Ga2O3
ME Ingebrigtsen, JB Varley, AY Kuznetsov, BG Svensson, G Alfieri, ...
Applied Physics Letters 112 (4), 042104, 2018
2592018
Impact of proton irradiation on conductivity and deep level defects in β-Ga2O3
ME Ingebrigtsen, AY Kuznetsov, BG Svensson, G Alfieri, A Mihaila, ...
Apl Materials 7 (2), 2019
196*2019
Bulk β-Ga2O3 with (010) and (201) Surface Orientation: Schottky Contacts and Point Defects
ME Ingebrigtsen, L Vines, G Alfieri, A Mihaila, U Badstübner, ...
Materials Science Forum 897, 755-758, 2017
292017
Generation and metastability of deep level states in β-Ga2O3 exposed to reverse bias at elevated temperatures
ME Ingebrigtsen, AY Kuznetsov, BG Svensson, G Alfieri, A Mihaila, ...
Journal of Applied Physics 125 (18), 2019
202019
Electrical characterization and identification of deep levels in β-Ga2O3
ME Ingebrigtsen
22019
Band gap engineering of the ZnO/Si heterojunction using amorphous buffer layers
ME Ingebrigtsen
2014
El sistema no puede realizar la operación en estos momentos. Inténtalo de nuevo más tarde.
Artículos 1–6