Improvement of peak quantum efficiency and efficiency droop in III-nitride visible light-emitting diodes with an InAlN electron-blocking layer S Choi, HJ Kim, SS Kim, J Liu, J Kim, JH Ryou, RD Dupuis, AM Fischer, ...
Applied Physics Letters 96 (22), 221105, 2010
245 2010 Improvement of quantum efficiency by employing active-layer-friendly lattice-matched InAlN electron blocking layer in green light-emitting diodes HJ Kim, S Choi, SS Kim, JH Ryou, PD Yoder, RD Dupuis, AM Fischer, ...
Applied Physics Letters 96 (10), 101102, 2010
117 2010 Deep-ultraviolet lasing at 243 nm from photo-pumped AlGaN/AlN heterostructure on AlN substrate Z Lochner, TT Kao, YS Liu, XH Li, MM Satter, SC Shen, PD Yoder, ...
Applied Physics Letters 102 (10), 101110, 2013
97 2013 Efficiency droop due to electron spill-over and limited hole injection in III-nitride visible light-emitting diodes employing lattice-matched InAlN electron blocking layers S Choi, MH Ji, J Kim, HJ Kim, MM Satter, PD Yoder, JH Ryou, RD Dupuis, ...
Applied Physics Letters 101 (16), 161110, 2012
96 2012 Low-threshold stimulated emission at 249 nm and 256 nm from AlGaN-based multiple-quantum-well lasers grown on sapphire substrates XH Li, T Detchprohm, TT Kao, MM Satter, SC Shen, PD Yoder, RD Dupuis, ...
Applied Physics Letters 105 (14), 141106, 2014
94 2014 Misfit strain relaxation by stacking fault generation in InGaN quantum wells grown on m-plane GaN AM Fischer, Z Wu, K Sun, Q Wei, Y Huang, R Senda, D Iida, M Iwaya, ...
Applied Physics Express 2 (4), 041002, 2009
84 2009 Structural and optical properties of nonpolar GaN thin films ZH Wu, AM Fischer, FA Ponce, B Bastek, J Christen, T Wernicke, ...
Applied Physics Letters 92 (17), 171904-171904-3, 2008
84 2008 Control of quantum-confined Stark effect in InGaN/GaN multiple quantum well active region by p-type layer for III-nitride-based visible light emitting diodes JH Ryou, W Lee, J Limb, D Yoo, JP Liu, RD Dupuis, ZH Wu, AM Fischer, ...
Applied Physics Letters 92 (10), 1113, 2008
80 2008 Carrier localization and nonradiative recombination in yellow emitting InGaN quantum wells T Li, AM Fischer, QY Wei, FA Ponce, T Detchprohm, C Wetzel
Applied Physics Letters 96 (3), 031906, 2010
69 2010 Comprehensive study of the electronic and optical behavior of highly degenerate p-type Mg-doped GaN and AlGaN BP Gunning, CAM Fabien, JJ Merola, EA Clinton, WA Doolittle, S Wang, ...
Journal of Applied Physics 117 (4), 045710, 2015
68 2015 Origins of unintentional incorporation of gallium in InAlN layers during epitaxial growth, part II: Effects of underlying layers and growth chamber conditions J Kim, Z Lochner, MH Ji, S Choi, HJ Kim, JS Kim, RD Dupuis, AM Fischer, ...
Journal of Crystal Growth 388, 143-149, 2014
66 2014 Demonstration of transverse-magnetic deep-ultraviolet stimulated emission from AlGaN multiple-quantum-well lasers grown on a sapphire substrate XH Li, TT Kao, MM Satter, YO Wei, S Wang, H Xie, SC Shen, PD Yoder, ...
Applied Physics Letters 106 (4), 041115, 2015
63 2015 Origins of unintentional incorporation of gallium in AlInN layers during epitaxial growth, part I: Growth of AlInN on AlN and effects of prior coating S Choi, HJ Kim, Z Lochner, J Kim, RD Dupuis, AM Fischer, R Juday, ...
Journal of Crystal Growth 388, 137-142, 2014
59 2014 Highly luminescent, high-indium-content InGaN film with uniform composition and full misfit-strain relaxation AM Fischer, YO Wei, FA Ponce, M Moseley, B Gunning, WA Doolittle
Applied Physics Letters 103 (13), 131101, 2013
57 2013 Growth of high‐quality AlN layers on sapphire substrates at relatively low temperatures by metalorganic chemical vapor deposition XH Li, S Wang, H Xie, YO Wei, TT Kao, M Satter, SC Shen, ...
physica status solidi (b) 252 (5), 1089-1095, 2015
56 2015 Low-temperature growth of InGaN films over the entire composition range by MBE CAM Fabien, BP Gunning, WA Doolittle, AM Fischer, YO Wei, H Xie, ...
Journal of Crystal Growth 425, 115-118, 2015
49 2015 Sub-250 nm low-threshold deep-ultraviolet AlGaN-based heterostructure laser employing HfO2/SiO2 dielectric mirrors TT Kao, YS Liu, MM Satter, XH Li, Z Lochner, PD Yoder, T Detchprohm, ...
Applied Physics Letters 103 (21), 211103, 2013
46 2013 Temperature dependence of the crystalline quality of AlN layer grown on sapphire substrates by metalorganic chemical vapor deposition XH Li, YO Wei, S Wang, H Xie, TT Kao, MM Satter, SC Shen, PD Yoder, ...
Journal of Crystal Growth 414, 76-80, 2015
42 2015 Blue light emitting diodes grown on freestanding (11-20) -plane GaN substrates JP Liu, JB Limb, JH Ryou, D Yoo, CA Horne, RD Dupuis, ZH Wu, ...
Applied Physics Letters 92 (1), 011123, 2008
40 2008 Role of the buffer layer thickness on the formation of basal plane stacking faults in a-plane GaN epitaxy on r-sapphire ZH Wu, AM Fischer, FA Ponce, T Yokogawa, S Yoshida, R Kato
Applied Physics Letters 93 (1), 011901, 2008
36 2008