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Himanshi Rani
Himanshi Rani
Technical University of Munich, Germany
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Understanding the influence of in-plane gate electrode design on electrolyte gated transistor
S Joshi, VD Bhatt, H Rani, M Becherer, P Lugli
Microelectronic Engineering 199, 87-91, 2018
152018
2-Dimensional Wavelet pre-processing to extract IC-Pin information for disarrangement analysis”
K Kumar, A Yadav, H Rani, Y Nijhawan, S Radhika
IOSR Journal of Electronics and Communication Engineering 7 (6), 36-38, 2013
22013
Artificial Neural Network based Classification of IC through Extracting the Feature Set of IC Images using 2-Dimensional Discrete Wavelet Transform
K Kumar, A Yadav, H Rani
Int. J. Comput. Intell. Res 9 (2), 115-119, 2013
12013
Mislaid character analysis using 2-dimensional discrete wavelet transform for edge refinement
K Kumar, A Yadav, H Rani, Y Nijhawan
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Artículos 1–4