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Pierre Valvin
Pierre Valvin
CNRS - Laboratoire Charles Coulomb (L2C) - Montpellier
Dirección de correo verificada de umontpellier.fr
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Hexagonal boron nitride is an indirect bandgap semiconductor
G Cassabois, P Valvin, B Gil
Nature photonics 10 (4), 262-266, 2016
11852016
Internal electric field in wurtzite quantum wells
C Morhain, T Bretagnon, P Lefebvre, X Tang, P Valvin, T Guillet, B Gil, ...
Physical Review B 72 (24), 241305, 2005
2392005
Direct band-gap crossover in epitaxial monolayer boron nitride
C Elias, P Valvin, T Pelini, A Summerfield, CJ Mellor, TS Cheng, L Eaves, ...
Nature communications 10 (1), 2639, 2019
2262019
Radiative lifetime of a single electron-hole pair in quantum dots
T Bretagnon, P Lefebvre, P Valvin, R Bardoux, T Guillet, T Taliercio, B Gil, ...
Physical Review B 73 (11), 113304, 2006
1472006
Giant Rabi splitting between localized mixed plasmon-exciton states in a two-dimensional array of nanosize metallic disks in an organic semiconductor
J Bellessa, C Symonds, K Vynck, A Lemaitre, A Brioude, L Beaur, ...
Physical Review B 80 (3), 033303, 2009
1342009
Deep ultraviolet emission in hexagonal boron nitride grown by high-temperature molecular beam epitaxy
TQP Vuong, G Cassabois, P Valvin, E Rousseau, A Summerfield, ...
2D Materials 4 (2), 021023, 2017
1162017
Isotope engineering of van der Waals interactions in hexagonal boron nitride
TQP Vuong, S Liu, A Van der Lee, R Cuscó, L Artús, T Michel, P Valvin, ...
Nature materials 17 (2), 152-158, 2018
1142018
Phonon-photon mapping in a color center in hexagonal boron nitride
TQP Vuong, G Cassabois, P Valvin, A Ouerghi, Y Chassagneux, C Voisin, ...
Physical review letters 117 (9), 097402, 2016
1032016
Micro epitaxial lateral overgrowth of GaN/sapphire by metal organic vapour phase epitaxy
E Frayssinet, B Beaumont, JP Faurie, P Gibart, Z Makkai, B Pécz, ...
MRS Internet Journal of Nitride Semiconductor Research 7, 1-7, 2002
1032002
Time-resolved spectroscopy on GaN nanocolumns grown by plasma assisted molecular beam epitaxy on Si substrates
P Corfdir, P Lefebvre, J Ristić, P Valvin, E Calleja, A Trampert, JD Ganière, ...
Journal of Applied Physics 105 (1), 2009
812009
Intervalley scattering in hexagonal boron nitride
G Cassabois, P Valvin, B Gil
Physical review B 93 (3), 035207, 2016
802016
Observation and modeling of the time-dependent descreening of internal electric field in a wurtzite quantum well after high photoexcitation
P Lefebvre, S Kalliakos, T Bretagnon, P Valvin, T Taliercio, B Gil, ...
Physical Review B 69 (3), 035307, 2004
752004
Deep-UV nitride-on-silicon microdisk lasers
J Selles, C Brimont, G Cassabois, P Valvin, T Guillet, I Roland, Y Zeng, ...
Scientific Reports 6 (1), 21650, 2016
702016
Time dependence of the photoluminescence of GaN/AlN quantum dots under high photoexcitation
T Bretagnon, S Kalliakos, P Lefebvre, P Valvin, B Gil, N Grandjean, ...
Physical Review B 68 (20), 205301, 2003
542003
Shallow and deep levels in carbon-doped hexagonal boron nitride crystals
T Pelini, C Elias, R Page, L Xue, S Liu, J Li, JH Edgar, A Dréau, ...
Physical Review Materials 3 (9), 094001, 2019
482019
Laser emission with excitonic gain in a ZnO planar microcavity
T Guillet, C Brimont, P Valvin, B Gil, T Bretagnon, F Médard, M Mihailovic, ...
Applied Physics Letters 98 (21), 2011
462011
Internal quantum efficiency in yellow-amber light emitting AlGaN-InGaN-GaN heterostructures
TH Ngo, B Gil, P Valvin, B Damilano, K Lekhal, P De Mierry
Applied Physics Letters 107 (12), 2015
422015
Band gap measurements of monolayer h-BN and insights into carbon-related point defects
RJP Román, FJRC Costa, A Zobelli, C Elias, P Valvin, G Cassabois, B Gil, ...
2D Materials 8 (4), 044001, 2021
412021
Overtones of interlayer shear modes in the phonon-assisted emission spectrum of hexagonal boron nitride
TQP Vuong, G Cassabois, P Valvin, V Jacques, R Cuscó, L Artús, B Gil
Physical review B 95 (4), 045207, 2017
392017
Phonon symmetries in hexagonal boron nitride probed by incoherent light emission
TQP Vuong, G Cassabois, P Valvin, V Jacques, A van Der Lee, A Zobelli, ...
2D Materials 4 (1), 011004, 2016
392016
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Artículos 1–20