Beatriz G. Vasallo
Beatriz G. Vasallo
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Ballistic nanodevices for terahertz data processing: Monte Carlo simulations
J Mateos, BG Vasallo, D Pardo, T González, JS Galloo, Y Roelens, ...
Nanotechnology 14 (2), 117, 2003
1032003
Ballistic nanodevices for terahertz data processing: Monte Carlo simulations
J Mateos, BG Vasallo, D Pardo, T González, JS Galloo, Y Roelens, ...
Nanotechnology 14 (2), 117, 2003
1032003
Operation and high-frequency performance of nanoscale unipolar rectifying diodes
J Mateos, BG Vasallo, D Pardo, T González
Applied Physics Letters 86 (21), 212103, 2005
1012005
Microscopic modeling of nonlinear transport in ballistic nanodevices
J Mateos, BG Vasallo, D Pardo, T González, JS Galloo, S Bollaert, ...
IEEE Transactions on Electron Devices 50 (9), 1897-1905, 2003
1012003
Comparison between the dynamic performance of double-and single-gate AlInAs/InGaAs HEMTs
BG Vasallo, N Wichmann, S Bollaert, Y Roelens, A Cappy, T González, ...
IEEE Transactions on Electron Devices 54 (11), 2815-2822, 2007
802007
Nonlinear effects in T-branch junctions
J Mateos, BG Vasallo, D Pardo, T González, E Pichonat, JS Galloo, ...
IEEE Electron Device Letters 25 (5), 235-237, 2004
622004
Comparison between the noise performance of double-and single-gate InP-based HEMTs
BG Vasallo, N Wichmann, S Bollaert, Y Roelens, A Cappy, TÁ Gonzalez, ...
IEEE transactions on electron devices 55 (6), 1535-1540, 2008
322008
THz operation of self-switching nano-diodes and nano-transistors
J Mateos, AM Song, BG Vasallo, D Pardo, T González
Nanotechnology II 5838, 145-153, 2005
312005
Monte Carlo study of kink effect in short-channel InAlAs/InGaAs high electron mobility transistors
BG Vasallo, J Mateos, D Pardo, T González
Journal of applied physics 94 (6), 4096-4101, 2003
282003
Monte Carlo study of kink effect in isolated-gate InAs/AlSb high electron mobility transistors
BG Vasallo, H Rodilla, T González, G Moschetti, J Grahn, J Mateos
Journal of Applied Physics 108 (9), 094505, 2010
262010
Kink-effect related noise in short-channel InAlAs/InGaAs high electron mobility transistors
BG Vasallo, J Mateos, D Pardo, T González
Journal of Applied Physics 95 (12), 8271-8274, 2004
242004
Room temperature nonlinear transport in ballistic nanodevices
T González, BG Vasallo, D Pardo, J Mateos
Semiconductor science and technology 19 (4), S125, 2004
242004
Monte Carlo analysis of four-terminal ballistic rectifiers
BG Vasallo, T González, D Pardo, J Mateos
Nanotechnology 15 (4), S250, 2004
202004
Ballistic nano-devices for high frequency applications
S Bollaert, A Cappy, Y Roelens, JS Galloo, C Gardes, Z Teukam, ...
Thin Solid Films 515 (10), 4321-4326, 2007
192007
Monte Carlo simulation of noise in electronic devices: limitations and perspectives
T Gonzalez, J Mateos, MJ Martín‐Martínez, S Perez, R Rengel, ...
AIP Conference Proceedings 665 (1), 496-503, 2003
142003
Kink effect and noise performance in isolated-gate InAs/AlSb high electron mobility transistors
BG Vasallo, H Rodilla, T González, G Moschetti, J Grahn, J Mateos
Semiconductor Science and Technology 27 (6), 065018, 2012
132012
Supervised coursework as a way of improving motivation in the learning of digital electronics
R Rengel, MJ Martin, BG Vasallo
IEEE Transactions on Education 55 (4), 525-528, 2012
122012
Monte Carlo modelling of noise in advanced III–V HEMTs
J Mateos, H Rodilla, BG Vasallo, T González
Journal of Computational Electronics 14 (1), 72-86, 2015
102015
Effect of tunnel injection through the Schottky gate on the static and noise behavior of GaInAs/AlInAs high electron mobility transistor
D Moro-Melgar, J Mateos, T González, BG Vasallo
Journal of Applied Physics 116 (23), 234502, 2014
102014
Monte carlo study of 2-D capacitance fringing effects in GaAs planar schottky diodes
D Moro-Melgar, A Maestrini, J Treuttel, L Gatilova, T González, ...
IEEE Transactions on Electron Devices 63 (10), 3900-3907, 2016
82016
El sistema no puede realizar la operación en estos momentos. Inténtalo de nuevo más tarde.
Artículos 1–20