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AZIZA H.
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Robust compact model for bipolar oxide-based resistive switching memories
M Bocquet, D Deleruyelle, H Aziza, C Muller, JM Portal, T Cabout, ...
IEEE transactions on electron devices 61 (3), 674-681, 2014
1372014
Synchronous non-volatile logic gate design based on resistive switching memories
W Zhao, M Moreau, E Deng, Y Zhang, JM Portal, JO Klein, M Bocquet, ...
IEEE Transactions on Circuits and Systems I: Regular Papers 61 (2), 443-454, 2013
1192013
EEPROM memory: Threshold voltage built in self diagnosis
JM Portal, H Aziza
International Test Conference, 2003. Proceedings. ITC 2003., 23-23, 2003
1022003
Simulation of intrinsic bipolar transistor mechanisms for future capacitor-less eDRAM on bulk substrate
R Pulicani, O Goducheau, H Degoirat, H Aziza, A Pérez, E Bergeret
2010 17th IEEE International Conference on Electronics, Circuits and Systems …, 2010
962010
EEPROM diagnosis based on threshold voltage embedded measurement
JM Portal, H Aziza, D Née
Journal of Electronic Testing 21, 33-42, 2005
882005
Memristor based memories: Technology, design and test
S Hamdioui, H Aziza, GC Sirakoulis
Design & Technology of Integrated Systems In Nanoscale Era (DTIS), 2014 9th …, 2014
702014
Device-Aware Test: A New test Approach Towards DPPB Level
M Fieback, L Wu, GC Medeiros, H Aziza, S Rao, EJ Marinissen, M Taouil, ...
2019 IEEE International Test Conference (ITC), 2019
532019
Nonvolatile memories: Present and future challenges
EI Vatajelu, H Aziza, C Zambelli
2014 9th International Design and Test Symposium (IDT), 61-66, 2014
502014
Compact modeling solutions for oxide-based resistive switching memories (OxRAM)
M Bocquet, H Aziza, W Zhao, Y Zhang, S Onkaraiah, C Muller, M Reyboz, ...
Journal of Low Power Electronics and Applications 4 (1), 1-14, 2014
482014
RRAM device models: A comparative analysis with experimental validation
B Hajri, H Aziza, MM Mansour, A Chehab
IEEE Access 7, 168963-168980, 2019
452019
NFC technology in mobile phone next-generation services
H Aziza
2010 second international workshop on near field communication, 21-26, 2010
442010
True Random Number Generator Integration in a Resistive RAM Memory Array using Input Current Limitation
H Aziza, J Postel-Pellerin, H Bazzi, P Canet, M Moreau, VD Marca, A Harb
IEEE Transactions on Nanotechnology, 2020
402020
RRAM-based non-volatile SRAM cell architectures for ultra-low-power applications
H Bazzi, A Harb, H Aziza, M Moreau, A Kassem
Analog Integrated Circuits and Signal Processing Journal 106 (2), 351-361, 2021
372021
An overview of non-volatile flip-flops based on emerging memory technologies
JM Portal, M Bocquet, M Moreau, H Aziza, D Deleruyelle, Y Zhang, ...
Journal of Electronic Science and Technology 12 (2), 173-181, 2014
362014
Design and analysis of crossbar architecture based on complementary resistive switching non-volatile memory cells
WS Zhao, JM Portal, W Kang, M Moreau, Y Zhang, H Aziza, JO Klein, ...
Journal of Parallel and Distributed Computing 74 (6), 2484-2496, 2014
302014
Design and simulation of a 128 kb embedded nonvolatile memory based on a hybrid RRAM (HfO2)/28 nm FDSOI CMOS technology
JM Portal, M Bocquet, S Onkaraiah, M Moreau, H Aziza, D Deleruyelle, ...
IEEE Transactions on Nanotechnology 16 (4), 677-686, 2017
282017
Evaluation of OxRAM cell variability impact on memory performances through electrical simulations
H Aziza, M Bocquet, JM Portal, C Muller
2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding, 1-5, 2011
272011
Oxide-based RRAM models for circuit designers: A comparative analysis
B Hajri, MM Mansour, A Chehab, H Aziza
2017 12th International Conference on Design & Technology of Integrated …, 2017
252017
Impact of hump effect on MOSFET mismatch in the sub-threshold area for low power analog applications
Y Joly, L Lopez, JM Portal, H Aziza, Y Bert, F Julien, P Fornara
2010 10th IEEE International Conference on Solid-State and Integrated …, 2010
242010
Development of a CMOS oscillator concept for particle detection and tracking
K Castellani-Coulié, H Aziza, W Rahajandraibe, G Micolau, JM Portal
IEEE Transactions on Nuclear Science 60 (4), 2450-2455, 2013
232013
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