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Phase change memory as synapse for ultra-dense neuromorphic systems: Application to complex visual pattern extraction
M Suri, O Bichler, D Querlioz, O Cueto, L Perniola, V Sousa, D Vuillaume, ...
2011 International Electron Devices Meeting, 4.4. 1-4.4. 4, 2011
2402011
Bio-inspired stochastic computing using binary CBRAM synapses
M Suri, D Querlioz, O Bichler, G Palma, E Vianello, D Vuillaume, ...
IEEE Transactions on Electron Devices 60 (7), 2402-2409, 2013
2012013
A stacked SONOS technology, up to 4 levels and 6nm crystalline nanowires, with gate-all-around or independent gates (Φ-Flash), suitable for full 3D integration
A Hubert, E Nowak, K Tachi, V Maffini-Alvaro, C Vizioz, C Arvet, ...
2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009
1952009
Experimental and theoretical investigation of nano-crystal and nitride-trap memory devices
B De Salvo, G Ghibaudo, G Pananakakis, P Masson, T Baron, N Buffet, ...
IEEE Transactions on Electron Devices 48 (8), 1789-1799, 2001
1682001
Visual pattern extraction using energy-efficient “2-PCM synapse” neuromorphic architecture
O Bichler, M Suri, D Querlioz, D Vuillaume, B DeSalvo, C Gamrat
IEEE Transactions on Electron Devices 59 (8), 2206-2214, 2012
1492012
HfO2-Based OxRAM Devices as Synapses for Convolutional Neural Networks
D Garbin, E Vianello, O Bichler, Q Rafhay, C Gamrat, G Ghibaudo, ...
IEEE Transactions on Electron Devices 62 (8), 2494-2501, 2015
1432015
CBRAM devices as binary synapses for low-power stochastic neuromorphic systems: auditory (cochlea) and visual (retina) cognitive processing applications
M Suri, O Bichler, D Querlioz, G Palma, E Vianello, D Vuillaume, ...
2012 International Electron Devices Meeting, 10.3. 1-10.3. 4, 2012
1342012
Electrical behavior of phase-change memory cells based on GeTe
L Perniola, V Sousa, A Fantini, E Arbaoui, A Bastard, M Armand, ...
ieee electron device letters 31 (5), 488-490, 2010
1242010
Performance and reliability features of advanced nonvolatile memories based on discrete traps (silicon nanocrystals, SONOS)
B De Salvo, C Gerardi, R van Schaijk, SA Lombardo, D Corso, ...
IEEE Transactions on Device and Materials Reliability 4 (3), 377-389, 2004
1222004
Physical aspects of low power synapses based on phase change memory devices
M Suri, O Bichler, D Querlioz, B Traoré, O Cueto, L Perniola, V Sousa, ...
Journal of Applied Physics 112 (5), 054904, 2012
1212012
How far will silicon nanocrystals push the scaling limits of NVMs technologies?
B De Salvo, C Gerardi, S Lombardo, T Baron, L Perniola, D Mariolle, ...
IEEE International Electron Devices Meeting 2003, 26.1. 1-26.1. 4, 2003
1112003
Silicon nanocrystal memories
S Lombardo, B De Salvo, C Gerardi, T Baron
Microelectronic Engineering 72 (1-4), 388-394, 2004
982004
Experimental and theoretical study of electrode effects in HfO2 based RRAM
C Cagli, J Buckley, V Jousseaume, T Cabout, A Salaun, H Grampeix, ...
2011 International Electron Devices Meeting, 28.7. 1-28.7. 4, 2011
862011
Experimental and theoretical investigation of nonvolatile memory data-retention
B De Salvo, G Ghibaudo, G Pananakakis, G Reimbold, F Mondond, ...
IEEE Transactions on Electron Devices 46 (7), 1518-1524, 1999
801999
Carbon-doped GeTe: a promising material for phase-change memories
GB Beneventi, L Perniola, V Sousa, E Gourvest, S Maitrejean, JC Bastien, ...
Solid-State Electronics 65, 197-204, 2011
732011
Growth of Si nanocrystals on alumina and integration in memory devices
T Baron, A Fernandes, JF Damlencourt, B De Salvo, F Martin, F Mazen, ...
Applied physics letters 82 (23), 4151-4153, 2003
722003
Novel Si-based nanowire devices: Will they serve ultimate MOSFETs scaling or ultimate hybrid integration?
T Ernst, L Duraffourg, C Dupre, E Bernard, P Andreucci, S Bécu, E Ollier, ...
2008 IEEE International Electron Devices Meeting, 1-4, 2008
712008
Variability-tolerant convolutional neural network for pattern recognition applications based on OxRAM synapses
D Garbin, O Bichler, E Vianello, Q Rafhay, C Gamrat, L Perniola, ...
2014 IEEE International Electron Devices Meeting, 28.4. 1-28.4. 4, 2014
682014
Ferrocene and porphyrin monolayers on Si (100) surfaces: preparation and effect of linker length on electron transfer
K Huang, F Duclairoir, T Pro, J Buckley, G Marchand, E Martinez, ...
ChemPhysChem 10 (6), 963-971, 2009
642009
Engineering of ‘Conduction Band-Crested Barriers’ or ‘Dielectric Constant-Crested Barriers’ in view of their application of floating-gate non-volatile memory devices
J Buckley, B DeSalvo, G Ghibaudo, M Gely, JF Damlencourt, AM Papon
Silicon Nanoelectronics Workshop, 2004
632004
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Artículos 1–20