| A Monte Carlo study of electron transport in suspended monolayer graphene R Rengel, C Couso, MJ Martín 2013 Spanish Conference on Electron Devices, 175-178, 2013 | 13 | 2013 |
| Monte Carlo study of dopant-segregated Schottky barrier SoI MOSFETs: Enhancement of the RF performance MJ Martin-Martinez, C Couso, E Pascual, R Rengel IEEE Transactions on Electron Devices 61 (12), 3955-3961, 2014 | 12 | 2014 |
| Workfunction fluctuations in polycrystalline TiN observed with KPFM and their impact on MOSFETs variability A Ruiz, N Seoane, S Claramunt, A Garcia-Loureiro, M Porti, C Couso, ... Applied physics letters 114 (9), 2019 | 11 | 2019 |
| Conductance of threading dislocations in InGaAs/Si stacks by temperature-CAFM measurements C Couso, V Iglesias, M Porti, S Claramunt, M Nafria, N Domingo, ... IEEE electron device letters 37 (5), 640-643, 2016 | 11 | 2016 |
| CAFM experimental considerations and measurement methodology for in-line monitoring and quantitative analysis of III–V materials defects M Porti, V Iglesias, Q Wu, C Couso, S Claramunt, M Nafría, A Cordes, ... IEEE Transactions on Nanotechnology 15 (6), 986-992, 2016 | 7 | 2016 |
| Threshold voltage and on-current variability related to interface traps spatial distribution V Velayudhan, J Martín-Martínez, M Porti, C Couso, R Rodríguez, ... 2015 45th European Solid State Device Research Conference (ESSDERC), 230-233, 2015 | 7 | 2015 |
| Local defect density in polycrystalline high-k dielectrics: CAFM-based evaluation methodology and impact on MOSFET variability C Couso, M Porti, J Martin-Martinez, AJ Garcia-Loureiro, N Seoane, ... IEEE Electron Device Letters 38 (5), 637-640, 2017 | 6 | 2017 |
| Threading dislocations in III-V semiconductors: Analysis of electrical conduction V Iglesias, M Porti, C Couso, Q Wu, S Claramunt, M Nafría, E Miranda, ... 2015 IEEE International Reliability Physics Symposium, CD. 4.1-CD. 4.6, 2015 | 6 | 2015 |
| Performance and power consumption trade-off in UTBB FDSOI inverters operated at NTV for IoT applications C Couso, J Martin-Martinez, M Porti, M Nafria IEEE Journal of the Electron Devices Society 6, 55-62, 2017 | 5 | 2017 |
| Efficient methodology to extract interface traps parameters for TCAD simulations C Couso, J Martin-Martinez, M Porti, M Nafria, X Aymerich Microelectronic Engineering 178, 66-70, 2017 | 4 | 2017 |
| Dependence of MOSFETs threshold voltage variability on channel dimensions C Couso, J Diaz-Fortuny, J Martin-Martinez, M Porti, R Rodriguez, ... 2017 Joint International EUROSOI Workshop and International Conference on …, 2017 | 4 | 2017 |
| IONDegradation in Si Devices in Harsh Radiation Environments: Modeling of Damage-Dopant Interactions P López, M Aboy, I Muñoz, I Santos, LA Marqués, C Couso, M Ullán, ... 2018 Spanish Conference on Electron Devices (CDE), 1-4, 2018 | 2 | 2018 |
| Conductive-AFM topography and current maps simulator for the study of polycrystalline high-k dielectrics C Couso, M Porti, J Martin-Martinez, V Iglesias, M Nafria, X Aymerich Journal of Vacuum Science & Technology B 33 (3), 2015 | 2 | 2015 |
| Methodology for the simulation of the variability of MOSFETs with polycrystalline high-k dielectrics using CAFM input data A Ruiz, C Couso, N Seoane, M Porti, AJ García-Loureiro, M Nafria IEEE Access 9, 90568-90576, 2021 | 1 | 2021 |
| Nanoscale electrical characterization of a varistor-like device fabricated with oxidized CVD graphene S Claramunt, Q Wu, A Ruiz, M Porti, C Couso, M Nafría, X Aymerich, ... 2017 Joint International EUROSOI Workshop and International Conference on …, 2017 | 1 | 2017 |
| Velocity and momentum fluctuations in suspended monolayer graphene MJ Martín, C Couso, R Rengel 2013 22nd International Conference on Noise and Fluctuations (ICNF), 1-4, 2013 | 1 | 2013 |
| Schottky Barrier MOSFETs working in the linear regime: A Monte Carlo study of microscopic transport C Couso, R Rengel, MJ Martin 2013 Spanish Conference on Electron Devices, 63-66, 2013 | 1 | 2013 |
| Effect of the dopant segregation layer on the static characteristics of Schottky-barrier n-MOSFETs C Couso, E Pascual, JM Galeote, MJ Martín, R Rengel 2012 8th International Caribbean Conference on Devices, Circuits and Systems …, 2012 | 1 | 2012 |
| IONDegradation in Si Devices in Harsh Radiation Environments: Modeling of Damage-Dopant Interactions P López Martín, M Aboy Cebrián, I Muñoz, I Santos Tejido, ... Institute of Electrical and Electronics Engineers (IEEE)., 2019 | | 2019 |
| Analysis of impact of nanoscale defects on variability in mos structures C Couso | | 2018 |
