Iván Santos Tejido
Title
Cited by
Cited by
Year
Modeling of damage generation mechanisms in silicon at energies below the displacement threshold
I Santos, LA Marqués, L Pelaz
Physical Review B 74 (17), 174115, 2006
502006
Front-end process modeling in silicon
L Pelaz, LA Marqués, M Aboy, P López, I Santos
The European Physical Journal B 72 (3), 323, 2009
402009
Characterization of octadecaborane implantation into Si using molecular dynamics
LA Marqués, L Pelaz, I Santos, VC Venezia
Physical Review B 74 (20), 201201, 2006
322006
Recrystallization of atomically balanced amorphous pockets in Si: A source of point defects
LA Marqués, L Pelaz, P López, I Santos, M Aboy
Physical Review B 76 (15), 153201, 2007
262007
Modeling of defects, dopant diffusion and clustering in silicon
M Aboy, I Santos, L Pelaz, LA Marqués, P López
Journal of Computational Electronics 13 (1), 40-58, 2014
232014
Improved atomistic damage generation model for binary collision simulations
I Santos, LA Marqués, L Pelaz, P López
Journal of Applied Physics 105 (8), 083530, 2009
222009
Atomistic modeling of impurity ion implantation in ultra-thin-body Si devices
L Pelaz, R Duffy, M Aboy, L Marques, P Lopez, I Santos, BJ Pawlak, ...
2008 IEEE International Electron Devices Meeting, 1-4, 2008
222008
Atomistic analysis of the annealing behavior of amorphous regions in silicon
P López, L Pelaz, LA Marqués, I Santos
Journal of applied physics 101 (9), 093518, 2007
212007
Molecular dynamics simulations of damage production by thermal spikes in Ge
P López, L Pelaz, I Santos, LA Marqués, M Aboy
Journal of Applied Physics 111 (3), 033519, 2012
192012
Molecular dynamics characterization of as-implanted damage in silicon
I Santos, LA Marqués, L Pelaz, P López, M Aboy, J Barbolla
Materials Science and Engineering: B 124, 372-375, 2005
192005
Molecular dynamics simulation of the regrowth of nanometric multigate Si devices
LA Marqués, L Pelaz, I Santos, P López, R Duffy
Journal of Applied Physics 111 (3), 034302, 2012
182012
Molecular dynamics study of amorphous pocket formation in Si at low energies and its application to improve binary collision models
I Santos, LA Marqués, L Pelaz, P Lopez
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2007
182007
Self-trapping in B-doped amorphous Si: Intrinsic origin of low acceptor efficiency
I Santos, P Castrillo, W Windl, DA Drabold, L Pelaz, LA Marqués
Physical Review B 81 (3), 033203, 2010
172010
Elucidating the atomistic mechanisms driving self-diffusion of amorphous Si during annealing
I Santos, LA Marqués, L Pelaz, L Colombo
Physical Review B 83 (15), 153201, 2011
162011
Structural transformations from point to extended defects in silicon: A molecular dynamics study
LA Marqués, L Pelaz, I Santos, P López, M Aboy
Physical Review B 78 (19), 193201, 2008
142008
Molecular dynamics simulation of the early stages of self-interstitial clustering in silicon
LA Marqués, M Aboy, M Ruiz, I Santos, P López, L Pelaz
Materials Science in Semiconductor Processing 42, 235-238, 2016
122016
Atomistic simulations in Si processing: Bridging the gap between atoms and experiments
LA Marqués, L Pelaz, P López, M Aboy, I Santos, J Barbolla
Materials Science and Engineering: B 124, 72-80, 2005
122005
Molecular dynamics study of damage generation mechanisms in silicon at the low energy regime
I Santos, LA Marques, L Pelaz, P Lopez
2007 Spanish Conference on Electron Devices, 37-40, 2007
112007
Atomistic process modeling based on Kinetic Monte Carlo and Molecular Dynamics for optimization of advanced devices
L Pelaz, L Marques, M Aboy, P Lopez, I Santos, R Duffy
2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009
102009
Atomistic study of the structural and electronic properties of a-Si: H/c-Si interfaces
I Santos, M Cazzaniga, G Onida, L Colombo
Journal of Physics: Condensed Matter 26 (9), 095001, 2014
92014
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Articles 1–20