| Modeling of damage generation mechanisms in silicon at energies below the displacement threshold I Santos, LA Marqués, L Pelaz Physical Review B 74 (17), 174115, 2006 | 60 | 2006 |
| Front-end process modeling in silicon L Pelaz, LA Marqués, M Aboy, P López, I Santos The European Physical Journal B 72 (3), 323-359, 2009 | 45 | 2009 |
| Characterization of octadecaborane implantation into Si using molecular dynamics LA Marqués, L Pelaz, I Santos, VC Venezia Physical Review B 74 (20), 201201, 2006 | 36 | 2006 |
| Molecular dynamics simulations of damage production by thermal spikes in Ge P López, L Pelaz, I Santos, LA Marqués, M Aboy Journal of Applied Physics 111 (3), 033519, 2012 | 32 | 2012 |
| Modeling of defects, dopant diffusion and clustering in silicon M Aboy, I Santos, L Pelaz, LA Marqués, P López Journal of Computational Electronics 13 (1), 40-58, 2014 | 30 | 2014 |
| Improved atomistic damage generation model for binary collision simulations I Santos, LA Marqués, L Pelaz, P López Journal of Applied Physics 105 (8), 083530, 2009 | 30 | 2009 |
| Recrystallization of atomically balanced amorphous pockets in Si: A source of point defects LA Marqués, L Pelaz, P López, I Santos, M Aboy Physical Review B 76 (15), 153201, 2007 | 28 | 2007 |
| Atomistic modeling of impurity ion implantation in ultra-thin-body Si devices L Pelaz, R Duffy, M Aboy, L Marques, P Lopez, I Santos, BJ Pawlak, ... 2008 IEEE International Electron Devices Meeting, 1-4, 2008 | 26 | 2008 |
| Atomistic analysis of the annealing behavior of amorphous regions in silicon P López, L Pelaz, LA Marqués, I Santos Journal of applied physics 101 (9), 093518, 2007 | 24 | 2007 |
| Elucidating the atomistic mechanisms driving self-diffusion of amorphous Si during annealing I Santos, LA Marqués, L Pelaz, L Colombo Physical Review B 83 (15), 153201, 2011 | 22 | 2011 |
| Molecular dynamics characterization of as-implanted damage in silicon I Santos, LA Marqués, L Pelaz, P López, M Aboy, J Barbolla Materials Science and Engineering: B 124, 372-375, 2005 | 22 | 2005 |
| Insights on the atomistic origin of X and W photoluminescence lines in c-Si from ab initio simulations I Santos, M Aboy, P López, LA Marqués, L Pelaz Journal of Physics D: Applied Physics 49 (7), 075109, 2016 | 20 | 2016 |
| Molecular dynamics simulation of the regrowth of nanometric multigate Si devices LA Marqués, L Pelaz, I Santos, P López, R Duffy Journal of Applied Physics 111 (3), 034302, 2012 | 20 | 2012 |
| Self-trapping in B-doped amorphous Si: Intrinsic origin of low acceptor efficiency I Santos, P Castrillo, W Windl, DA Drabold, L Pelaz, LA Marqués Physical Review B 81 (3), 033203, 2010 | 18 | 2010 |
| Structural transformations from point to extended defects in silicon: A molecular dynamics study LA Marqués, L Pelaz, I Santos, P López, M Aboy Physical Review B 78 (19), 193201, 2008 | 17 | 2008 |
| W and X photoluminescence centers in crystalline Si: chasing candidates at atomic level through multiscale simulations M Aboy, I Santos, P López, LA Marqués, L Pelaz Journal of Electronic Materials 47 (9), 5045-5049, 2018 | 14 | 2018 |
| Molecular dynamics simulation of the early stages of self-interstitial clustering in silicon LA Marqués, M Aboy, M Ruiz, I Santos, P López, L Pelaz Materials Science in Semiconductor Processing 42, 235-238, 2016 | 14 | 2016 |
| Molecular dynamics study of damage generation mechanisms in silicon at the low energy regime I Santos, LA Marques, L Pelaz, P Lopez 2007 Spanish Conference on Electron Devices, 37-40, 2007 | 13 | 2007 |
| Atomistic study of the structural and electronic properties of a-Si: H/c-Si interfaces I Santos, M Cazzaniga, G Onida, L Colombo Journal of Physics: Condensed Matter 26 (9), 095001, 2014 | 12 | 2014 |
| Atomistic process modeling based on Kinetic Monte Carlo and Molecular Dynamics for optimization of advanced devices L Pelaz, L Marques, M Aboy, P Lopez, I Santos, R Duffy 2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009 | 12 | 2009 |
Lourdes PelazUniversity of ValladolidVerified email at ele.uva.es
