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Marko J. Tadjer
Marko J. Tadjer
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A review of Ga2O3 materials, processing, and devices
SJ Pearton, J Yang, PH Cary IV, F Ren, J Kim, MJ Tadjer, MA Mastro
Applied Physics Reviews 5 (1), 011301, 2018
13282018
Ultrawide‐bandgap semiconductors: research opportunities and challenges
JY Tsao, S Chowdhury, MA Hollis, D Jena, NM Johnson, KA Jones, ...
Advanced Electronic Materials 4 (1), 1600501, 2018
6522018
Perspective: Ga2O3 for ultra-high power rectifiers and MOSFETS
SJ Pearton, F Ren, M Tadjer, J Kim
Journal of Applied Physics 124 (22), 220901, 2018
2942018
Technique for the dry transfer of epitaxial graphene onto arbitrary substrates
JD Caldwell, TJ Anderson, JC Culbertson, GG Jernigan, KD Hobart, ...
ACS nano 4 (2), 1108-1114, 2010
2592010
Homoepitaxial growth of β-Ga2O3 thin films by low pressure chemical vapor deposition
S Rafique, L Han, MJ Tadjer, JA Freitas Jr, NA Mahadik, H Zhao
Applied Physics Letters 108 (18), 182105, 2016
1772016
Quantifying pulsed laser induced damage to graphene
M Currie, JD Caldwell, FJ Bezares, J Robinson, T Anderson, H Chun, ...
Applied Physics Letters 99 (21), 211909, 2011
1542011
2300V reverse breakdown voltage Ga2O3 Schottky rectifiers
J Yang, F Ren, M Tadjer, SJ Pearton, A Kuramata
ECS Journal of Solid State Science and Technology 7 (5), Q92, 2018
1312018
A (001) β-Ga2O3 MOSFET with+ 2.9 V threshold voltage and HfO2 gate dielectric
MJ Tadjer, NA Mahadik, VD Wheeler, ER Glaser, L Ruppalt, AD Koehler, ...
ECS Journal of Solid State Science and Technology 5 (9), P468, 2016
1312016
Reduced self-heating in AlGaN/GaN HEMTs using nanocrystalline diamond heat-spreading films
MJ Tadjer, TJ Anderson, KD Hobart, TI Feygelson, JD Caldwell, CR Eddy, ...
IEEE electron device letters 33 (1), 23-25, 2011
1262011
Vertical GaN junction barrier Schottky rectifiers by selective ion implantation
Y Zhang, Z Liu, MJ Tadjer, M Sun, D Piedra, C Hatem, TJ Anderson, ...
IEEE Electron Device Letters 38 (8), 1097-1100, 2017
1142017
Heteroepitaxy of N-type β-Ga2O3 thin films on sapphire substrate by low pressure chemical vapor deposition
S Rafique, L Han, AT Neal, S Mou, MJ Tadjer, RH French, H Zhao
Applied Physics Letters 109 (13), 132103, 2016
1092016
Structural, optical, and electrical characterization of monoclinic β-Ga2O3 grown by MOVPE on sapphire substrates
MJ Tadjer, MA Mastro, NA Mahadik, M Currie, VD Wheeler, JA Freitas, ...
Journal of Electronic Materials 45 (4), 2031-2037, 2016
1082016
Review—theory and characterization of doping and defects in β-Ga2O3
MJ Tadjer, JL Lyons, N Nepal, JA Freitas, AD Koehler, GM Foster
ECS Journal of Solid State Science and Technology 8 (7), Q3187, 2019
1032019
Activation of Mg implanted in GaN by multicycle rapid thermal annealing
TJ Anderson, BN Feigelson, FJ Kub, MJ Tadjer, KD Hobart, MA Mastro, ...
Electronics Letters 50 (3), 197-198, 2014
902014
Vertical Ga2O3 Schottky Barrier Diodes With Small-Angle Beveled Field Plates: A Baliga’s Figure-of-Merit of 0.6 GW/cm2
N Allen, M Xiao, X Yan, K Sasaki, MJ Tadjer, J Ma, R Zhang, H Wang, ...
IEEE Electron Device Letters 40 (9), 1399-1402, 2019
872019
Quasi-Two-Dimensional h-BN/β-Ga2O3 Heterostructure Metal–Insulator–Semiconductor Field-Effect Transistor
J Kim, MA Mastro, MJ Tadjer, J Kim
ACS applied materials & interfaces 9 (25), 21322-21327, 2017
842017
Solar-blind metal-semiconductor-metal photodetectors based on an exfoliated β-Ga2O3 micro-flake
S Oh, MA Mastro, MJ Tadjer, J Kim
ECS Journal of Solid State Science and Technology 6 (8), Q79, 2017
792017
Simulation of thermal management in AlGaN/GaN HEMTs with integrated diamond heat spreaders
A Wang, MJ Tadjer, F Calle
Semiconductor science and technology 28 (5), 055010, 2013
782013
Band alignments of atomic layer deposited ZrO2 and HfO2 high-k dielectrics with (-201) β-Ga2O3
VD Wheeler, DI Shahin, MJ Tadjer, CR Eddy
ECS Journal of Solid State Science and Technology 6 (2), Q3052, 2016
682016
Thermal conductance across β-Ga2O3-diamond van der Waals heterogeneous interfaces
Z Cheng, L Yates, J Shi, MJ Tadjer, KD Hobart, S Graham
Apl Materials 7 (3), 031118, 2019
672019
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