| Surface diffusion-limited lifetime of silver and copper nanofilaments in resistive switching devices W Wang, M Wang, E Ambrosi, A Bricalli, M Laudato, Z Sun, X Chen, ... Nature communications 10 (1), 81, 2019 | 252 | 2019 |
| Solving matrix equations in one step with cross-point resistive arrays Z Sun, G Pedretti, E Ambrosi, A Bricalli, W Wang, D Ielmini Proceedings of the National Academy of Sciences 116 (10), 4123-4128, 2019 | 217 | 2019 |
| Silicon Oxide (SiOx): A Promising Material for Resistance Switching? A Mehonic, AL Shluger, D Gao, I Valov, E Miranda, D Ielmini, A Bricalli, ... Advanced materials 30 (43), 1801187, 2018 | 193 | 2018 |
| Logic computing with stateful neural networks of resistive switches Z Sun, E Ambrosi, A Bricalli, D Ielmini Advanced Materials 30 (38), 1802554, 2018 | 139 | 2018 |
| One-step regression and classification with cross-point resistive memory arrays Z Sun, G Pedretti, A Bricalli, D Ielmini Science advances 6 (5), eaay2378, 2020 | 97 | 2020 |
| Impact of oxide and electrode materials on the switching characteristics of oxide ReRAM devices E Ambrosi, A Bricalli, M Laudato, D Ielmini Faraday discussions 213, 87-98, 2019 | 88 | 2019 |
| SiOx-based resistive switching memory (RRAM) for crossbar storage/select elements with high on/off ratio A Bricalli, E Ambrosi, M Laudato, M Maestro, R Rodriguez, D Ielmini 2016 IEEE International Electron Devices Meeting (IEDM), 4.3. 1-4.3. 4, 2016 | 78 | 2016 |
| Resistive switching device technology based on silicon oxide for improved ON–OFF ratio—Part II: Select devices A Bricalli, E Ambrosi, M Laudato, M Maestro, R Rodriguez, D Ielmini IEEE Transactions on Electron Devices 65 (1), 122-128, 2017 | 66 | 2017 |
| Resistive switching device technology based on silicon oxide for improved ON–OFF ratio—Part I: Memory devices A Bricalli, E Ambrosi, M Laudato, M Maestro, R Rodriguez, D Ielmini IEEE Transactions on Electron Devices 65 (1), 115-121, 2017 | 59 | 2017 |
| Volatile resistive switching memory based on Ag ion drift/diffusion Part I: Numerical modeling W Wang, M Laudato, E Ambrosi, A Bricalli, E Covi, YH Lin, D Ielmini IEEE Transactions on Electron Devices 66 (9), 3795-3801, 2019 | 53 | 2019 |
| In-memory PageRank accelerator with a cross-point array of resistive memories Z Sun, E Ambrosi, G Pedretti, A Bricalli, D Ielmini IEEE Transactions on Electron Devices 67 (4), 1466-1470, 2020 | 43 | 2020 |
| Volatile resistive switching memory based on Ag ion drift/diffusion—Part II: Compact modeling W Wang, M Laudato, E Ambrosi, A Bricalli, E Covi, YH Lin, D Ielmini IEEE Transactions on Electron Devices 66 (9), 3802-3808, 2019 | 39 | 2019 |
| Time complexity of in-memory solution of linear systems Z Sun, G Pedretti, P Mannocci, E Ambrosi, A Bricalli, D Ielmini IEEE Transactions on Electron Devices 67 (7), 2945-2951, 2020 | 37 | 2020 |
| Memtransistor Devices Based on MoS2 Multilayers with Volatile Switching due to Ag Cation Migration M Farronato, M Melegari, S Ricci, S Hashemkhani, A Bricalli, D Ielmini Advanced Electronic Materials 8 (8), 2101161, 2022 | 23 | 2022 |
| A volatile RRAM synapse for neuromorphic computing E Covi, YH Lin, W Wang, T Stecconi, V Milo, A Bricalli, E Ambrosi, ... 2019 26th IEEE International Conference on Electronics, Circuits and Systems …, 2019 | 22 | 2019 |
| In‐Memory Eigenvector Computation in Time O(1) Z Sun, G Pedretti, E Ambrosi, A Bricalli, D Ielmini Advanced Intelligent Systems 2 (8), 2000042, 2020 | 21 | 2020 |
| Physics-based modeling of volatile resistive switching memory (RRAM) for crosspoint selector and neuromorphic computing W Wang, A Bricalli, M Laudato, E Ambrosi, E Covi, D Ielmini 2018 IEEE International Electron Devices Meeting (IEDM), 40.3. 1-40.3. 4, 2018 | 21 | 2018 |
| A self-adaptive hardware with resistive switching synapses for experience-based neurocomputing S Bianchi, I Muñoz-Martin, E Covi, A Bricalli, G Piccolboni, A Regev, ... Nature Communications 14 (1), 1565, 2023 | 15 | 2023 |
| Resistive switching synapses for unsupervised learning in feed-forward and recurrent neural networks V Milo, G Pedretti, M Laudato, A Bricalli, E Ambrosi, S Bianchi, E Chicca, ... 2018 IEEE International Symposium on Circuits and Systems (ISCAS), 1-5, 2018 | 14 | 2018 |
| Dual-configuration in-memory computing bitcells using SiOx RRAM for binary neural networks SK Kingra, V Parmar, S Negi, A Bricalli, G Piccolboni, A Regev, JF Nodin, ... Applied Physics Letters 120 (3), 2022 | 13 | 2022 |
