Alessandro Bricalli
Title
Cited by
Cited by
Year
Silicon Oxide (SiOx): A Promising Material for Resistance Switching?
A Mehonic, AL Shluger, D Gao, I Valov, E Miranda, D Ielmini, A Bricalli, ...
Advanced materials 30 (43), 1801187, 2018
1122018
Surface diffusion-limited lifetime of silver and copper nanofilaments in resistive switching devices
W Wang, M Wang, E Ambrosi, A Bricalli, M Laudato, Z Sun, X Chen, ...
Nature communications 10 (1), 1-9, 2019
1112019
Solving matrix equations in one step with cross-point resistive arrays
Z Sun, G Pedretti, E Ambrosi, A Bricalli, W Wang, D Ielmini
Proceedings of the National Academy of Sciences 116 (10), 4123-4128, 2019
962019
Logic computing with stateful neural networks of resistive switches
Z Sun, E Ambrosi, A Bricalli, D Ielmini
Advanced Materials 30 (38), 1802554, 2018
792018
Resistive switching device technology based on silicon oxide for improved ON–OFF ratio—Part II: Select devices
A Bricalli, E Ambrosi, M Laudato, M Maestro, R Rodriguez, D Ielmini
IEEE Transactions on Electron Devices 65 (1), 122-128, 2017
492017
SiOx-based resistive switching memory (RRAM) for crossbar storage/select elements with high on/off ratio
A Bricalli, E Ambrosi, M Laudato, M Maestro, R Rodriguez, D Ielmini
2016 IEEE International Electron Devices Meeting (IEDM), 4.3. 1-4.3. 4, 2016
492016
Impact of oxide and electrode materials on the switching characteristics of oxide ReRAM devices
E Ambrosi, A Bricalli, M Laudato, D Ielmini
Faraday discussions 213, 87-98, 2019
472019
Resistive switching device technology based on silicon oxide for improved ON–OFF ratio—part I: memory devices
A Bricalli, E Ambrosi, M Laudato, M Maestro, R Rodriguez, D Ielmini
IEEE Transactions on Electron Devices 65 (1), 115-121, 2018
402018
One-step regression and classification with cross-point resistive memory arrays
Z Sun, G Pedretti, A Bricalli, D Ielmini
Science advances 6 (5), eaay2378, 2020
282020
Volatile resistive switching memory based on Ag ion drift/diffusion Part I: Numerical modeling
W Wang, M Laudato, E Ambrosi, A Bricalli, E Covi, YH Lin, D Ielmini
IEEE Transactions on Electron Devices 66 (9), 3795-3801, 2019
212019
In-memory PageRank accelerator with a cross-point array of resistive memories
Z Sun, E Ambrosi, G Pedretti, A Bricalli, D Ielmini
IEEE Transactions on Electron Devices 67 (4), 1466-1470, 2020
192020
Volatile resistive switching memory based on Ag ion drift/diffusion—Part II: Compact modeling
W Wang, M Laudato, E Ambrosi, A Bricalli, E Covi, YH Lin, D Ielmini
IEEE Transactions on Electron Devices 66 (9), 3802-3808, 2019
192019
Physics-based modeling of volatile resistive switching memory (RRAM) for crosspoint selector and neuromorphic computing
W Wang, A Bricalli, M Laudato, E Ambrosi, E Covi, D Ielmini
2018 IEEE International Electron Devices Meeting (IEDM), 40.3. 1-40.3. 4, 2018
142018
Time complexity of in-memory solution of linear systems
Z Sun, G Pedretti, P Mannocci, E Ambrosi, A Bricalli, D Ielmini
IEEE Transactions on Electron Devices 67 (7), 2945-2951, 2020
92020
Resistive switching synapses for unsupervised learning in feed-forward and recurrent neural networks
V Milo, G Pedretti, M Laudato, A Bricalli, E Ambrosi, S Bianchi, E Chicca, ...
2018 IEEE International Symposium on Circuits and Systems (ISCAS), 1-5, 2018
92018
In‐Memory Eigenvector Computation in Time O(1)
Z Sun, G Pedretti, E Ambrosi, A Bricalli, D Ielmini
Advanced Intelligent Systems 2 (8), 2000042, 2020
72020
A volatile RRAM synapse for neuromorphic computing
E Covi, YH Lin, W Wang, T Stecconi, V Milo, A Bricalli, E Ambrosi, ...
2019 26th IEEE International Conference on Electronics, Circuits and Systems …, 2019
72019
Fully-Integrated Spiking Neural Network Using SiOx-Based RRAM as Synaptic Device
A Regev, A Bricalli, G Piccolboni, A Valentian, T Mesquida, G Molas, ...
2020 2nd IEEE International Conference on Artificial Intelligence Circuits …, 2020
32020
A SiOx RRAM-based hardware with spike frequency adaptation for power-saving continual learning in convolutional neural networks
I Muņoz-Martin, S Bianchi, E Covi, G Piccolboni, A Bricalli, A Regev, ...
2020 IEEE Symposium on VLSI Technology, 1-2, 2020
22020
A Comprehensive Oxide-Based ReRAM TCAD Model with Experimental Verification
W Goes, D Green, P Blaise, G Piccolboni, A Bricalli, A Regev, G Molas, ...
2021 IEEE International Memory Workshop (IMW), 1-4, 2021
12021
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