| An industrial process for 650V rated GaN-on-Si power devices using in-situ SiN as a gate dielectric P Moens, C Liu, A Banerjee, P Vanmeerbeek, P Coppens, H Ziad, ... 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's …, 2014 | 126 | 2014 |
| GaN transistor characteristics at elevated temperatures A Pérez-Tomás, M Placidi, N Baron, S Chenot, Y Cordier, JC Moreno, ... Journal of Applied Physics 106 (7), 2009 | 93 | 2009 |
| GaN metal-oxide-semiconductor field-effect transistor inversion channel mobility modeling A Pérez-Tomás, M Placidi, X Perpiñà, A Constant, P Godignon, X Jordà, ... Journal of Applied Physics 105 (11), 2009 | 54 | 2009 |
| Schottky versus bipolar 3.3 kV SiC diodes A Pérez-Tomás, P Brosselard, J Hassan, X Jorda, P Godignon, M Placidi, ... Semiconductor Science and Technology 23 (12), 125004, 2008 | 41 | 2008 |
| Impact of Ti/Al atomic ratio on the formation mechanism of non-recessed Au-free ohmic contacts on AlGaN/GaN heterostructures A Constant, J Baele, P Coppens, W Qin, H Ziad, E De Backer, P Moens, ... Journal of Applied Physics 120 (10), 2016 | 37 | 2016 |
| Effects of cap layer on ohmic Ti/Al contacts to Si+ implanted GaN M Placidi, A Pérez-Tomás, A Constant, G Rius, N Mestres, J Millán, ... Applied Surface Science 255 (12), 6057-6060, 2009 | 35 | 2009 |
| Benefit of H2 surface pretreatment for 4H-SiC oxynitridation using N2O and rapid thermal processing steps A Constant, N Camara, P Godignon, J Camassel Applied Physics Letters 94 (6), 2009 | 33 | 2009 |
| 5 MeV proton and 15 MeV electron radiation effects study on 4H-SiC nMOSFET electrical parameters M Alexandru, M Florentin, A Constant, B Schmidt, P Michel, P Godignon 2013 14th European Conference on Radiation and Its Effects on Components and …, 2013 | 29 | 2013 |
| Intrinsic reliability assessment of 650V rated AlGaN/GaN based power devices: An industry perspective P Moens, A Banerjee, A Constant, P Coppens, M Caesar, Z Li, ... ECS Transactions 72 (4), 65, 2016 | 24 | 2016 |
| Effects of photons on 4H-SiC rapid thermal oxidation using nitrous oxide gas A Constant, N Camara, P Godignon, M Placidi, A Pérez-Tomás, ... Journal of the Electrochemical Society 157 (6), G136, 2010 | 24 | 2010 |
| Deposited thin SiO2 for gate oxide on n-type and p-type GaN M Placidi, A Constant, A Fontserè, E Pausas, I Cortes, Y Cordier, ... Journal of the Electrochemical Society 157 (11), H1008, 2010 | 23 | 2010 |
| Interfacial properties of AlN and oxidized AlN on Si M Placidi, A Perez-Tomas, JC Moreno, E Frayssinet, F Semond, ... Surface science 604 (1), 63-67, 2010 | 18 | 2010 |
| Interfacial properties of oxides grown on 3C-SiC by rapid thermal processing A Constant, N Camara, M Placidi, JM Decams, J Camassel, P Godignon Journal of The Electrochemical Society 158 (1), G13, 2010 | 14 | 2010 |
| 10 MeV proton irradiation effect on 4H-SiC nMOSFET electrical parameters M Florentin, M Alexandru, A Constant, B Schmidt, P Godignon Materials Science Forum 806, 121-125, 2015 | 12 | 2015 |
| Technology and design of GaN power devices P Moens, A Banerjee, P Coppens, A Constant, P Vanmeerbeek, Z Li, ... 2015 45th European Solid State Device Research Conference (ESSDERC), 64-67, 2015 | 10 | 2015 |
| Rapid and Efficient Oxidation Process of SiC by In Situ Multiple RTP Steps A Constant, N Camara, P Godignon, M Berthou, J Camassel, JM Decams Materials Science Forum 645, 817-820, 2010 | 8 | 2010 |
| Proton and electron irradiation in oxynitrided gate 4H-SiC MOSFET: a recent open issue M Florentin, M Alexandru, A Constant, P Michel, J Montserrat, J Millan, ... Materials Science Forum 821, 667-672, 2015 | 7 | 2015 |
| Oxidation process by RTP for 4H-SiC MOSFET gate fabrication A Constant, N Camara, J Montserrat, E Pausas, J Camassel, P Godignon Materials Science Forum 679, 500-503, 2011 | 6 | 2011 |
| Electronic device and circuit including a transistor and a variable resistor J Roig-Guitart, A Constant US Patent 10,504,884, 2019 | 5 | 2019 |
| Gate oxide stability of 4H-SiC MOSFETs under on/off-state bias-temperature stress MJ Tadjer, A Constant, P Godignon, S Martin-Horcajo, A Bosca, F Calle, ... Materials Science Forum 740, 553-556, 2013 | 5 | 2013 |
