Bin Lu
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High Breakdown (> 1500 V) AIGaN/GaN HEMTs by Substrate-Transfer Technology
B Lu, T Palacios
IEEE electron device letters 31 (9), 951-953, 2010
Tri-gate normally-off GaN power MISFET
B Lu, E Matioli, T Palacios
Electron Device Letters, IEEE 33 (3), 360-362, 2012
Extraction of Dynamic On-Resistance in GaN Transistors: Under Soft-and Hard-Switching Conditions
B Lu, T Palacios, D Risbud, S Bahl, DI Anderson
Compound Semiconductor Integrated Circuit Symposium (CSICS), 2011 IEEE, 1-4, 2011
High-Performance Integrated Dual-Gate AlGaN/GaN Enhancement-Mode Transistor
B Lu, OI Saadat, T Palacios
Electron Device Letters, IEEE 31 (9), 990-992, 2010
Role of oxygen in the OFF-state degradation of AlGaN/GaN high electron mobility transistors
F Gao, B Lu, L Li, S Kaun, JS Speck, CV Thompson, T Palacios
Applied Physics Letters 99 (22), 223506, 2011
A Technology Overview of the PowerChip Development Program
M Araghchini, J Chen, V Doan-Nguyen, D Harburg, D Jin, J Kim, M Kim, ...
IEEE, 2013
Schottky-drain technology for AlGaN/GaN high-electron mobility transistors
B Lu, EL Piner, T Palacios
Electron Device Letters, IEEE 31 (4), 302-304, 2010
An etch-stop barrier structure for GaN high-electron-mobility transistors
B Lu, M Sun, T Palacios
Electron Device Letters, IEEE 34 (3), 369-371, 2013
An Etch-Stop Barrier Structure for GaN High-Electron-Mobility Transistors
B Lu, M Sun, T Palacios
IEEE Electron Device Letters 34 (3), 369-371, 2013
Ultralow Leakage Current AlGaN/GaN Schottky Diodes With 3-D Anode Structure
E Matioli, B Lu, T Palacios
Electron Devices, IEEE Transactions on 60 (10), 3365-3370, 2013
Comparative breakdown study of mesa-and ion-implantation-isolated AlGaN/GaN high-electron-mobility transistors on Si substrate
M Sun, HS Lee, B Lu, D Piedra, T Palacios
Applied Physics Express 5 (7), 074202, 2012
Impact of moisture and fluorocarbon passivation on the current collapse of AlGaN/GaN HEMTs
F Gao, D Chen, B Lu, HL Tuller, CV Thompson, S Keller, UK Mishra, ...
Electron Device Letters, IEEE 33 (10), 1378-1380, 2012
Breakdown mechanism in AlGaN/GaN HEMTs on Si substrate
B Lu, EL Piner, T Palacios
Device Research Conference (DRC), 2010, 193-194, 2010
GaN-on-Si technology, a new approach for advanced devices in energy and communications
JW Chung, K Ryu, B Lu, T Palacios
Solid-State Device Research Conference (ESSDERC), 2010 Proceedings of the …, 2010
Impact of GaN channel scaling in InAlN/GaN HEMTs
DS Lee, B Lu, M Azize, X Gao, S Guo, D Kopp, P Fay, T Palacios
Electron Devices Meeting (IEDM), 2011 IEEE International, 19.2. 1-19.2. 4, 2011
GaN power electronics
B Lu, D Piedra, T Palacios
Advanced Semiconductor Devices & Microsystems (ASDAM), 2010 8th …, 2010
On-wafer seamless integration of GaN and Si (100) electronics
JW Chung, B Lu, T Palacios
Compound Semiconductor Integrated Circuit Symposium, 2009. CISC 2009. Annual …, 2009
Enhancement-mode AlGaN/GaN HEMTs with high linearity fabricated by hydrogen plasma treatment
B Lu, OI Saadat, EL Piner, T Palacios
Device Research Conference, 2009. DRC 2009, 59-60, 2009
Advanced power electronic devices based on Gallium Nitride (GaN)
D Piedra, B Lu, M Sun, Y Zhang, E Matioli, F Gao, JW Chung, O Saadat, ...
Electron Devices Meeting (IEDM), 2015 IEEE International, 16.6. 1-16.6. 4, 2015
Low leakage normally-off tri-gate GaN MISFET
B Lu, E Matioli, T Palacios
Power Semiconductor Devices and ICs (ISPSD), 2012 24th International …, 2012
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Artículos 1–20