Arne Nylandsted Larsen
Arne Nylandsted Larsen
Professor Emeritus in Physics, Aarhus University
Verified email at phys.au.dk
Title
Cited by
Cited by
Year
Nanoscale Structuring by Misfit Dislocations in Si(1− x)Ge(x)/Si Epitaxial Systems
SY Shiryaev, F Jensen, JL Hansen, JW Petersen, AN Larsen
Physical Review Letters 78 (3), 503, 1997
2191997
Ge self-diffusion in epitaxial Si(1− x)Ge(x) layers
NR Zangenberg, JL Hansen, J Fage-Pedersen, AN Larsen
Physical Review Letters 87 (12), 125901, 2001
1732001
Irradiation-induced defects in Ge studied by transient spectroscopies
J Fage-Pedersen, AN Larsen, A Mesli
Physical review B 62 (15), 10116, 2000
1572000
Boron and phosphorus diffusion in strained and relaxed Si and SiGe
NR Zangenberg, J Fage-Pedersen, JL Hansen, AN Larsen
Journal of applied physics 94 (6), 3883-3890, 2003
1512003
Structural and electrical properties of silicon dioxide layers with embedded germanium nanocrystals grown by molecular beam epitaxy
A Kanjilal, JL Hansen, P Gaiduk, AN Larsen, N Cherkashin, A Claverie, ...
Applied Physics Letters 82 (8), 1212-1214, 2003
1492003
Fibronectin adsorption, cell adhesion, and proliferation on nanostructured tantalum surfaces
A Dolatshahi-Pirouz, T Jensen, DC Kraft, M Foss, P Kingshott, JL Hansen, ...
Acs Nano 4 (5), 2874-2882, 2010
1432010
Diffusion and defect reactions between donors, C, and vacancies in Ge. I. Experimental results
S Brotzmann, H Bracht, JL Hansen, AN Larsen, E Simoen, EE Haller, ...
Physical Review B 77 (23), 235207, 2008
1372008
Heavy doping effects in the diffusion of group IV and V impurities in silicon
AN Larsen, KK Larsen, PE Andersen, BG Svensson
Journal of applied physics 73 (2), 691-698, 1993
1351993
Diffusion of Sb in strained and relaxed Si and SiGe
P Kringhøj, AN Larsen, SY Shirayev
Physical review letters 76 (18), 3372, 1996
1181996
Diffusion of silicon in crystalline germanium
HH Silvestri, H Bracht, JL Hansen, AN Larsen, EE Haller
Semiconductor science and technology 21 (6), 758, 2006
902006
The nature of electrically inactive antimony in silicon
A Nylandsted Larsen, FT Pedersen, G Weyer, R Galloni, R Rizzoli, ...
Journal of applied physics 59 (6), 1908-1917, 1986
861986
Chemical bath deposition of PbS nanocrystals: Effect of substrate
AP Gaiduk, PI Gaiduk, AN Larsen
Thin Solid Films 516 (12), 3791-3795, 2008
812008
Radiation enhanced silicon self-diffusion and the silicon vacancy at high temperatures
H Bracht, JF Pedersen, N Zangenberg, AN Larsen, EE Haller, G Lulli, ...
Physical review letters 91 (24), 245502, 2003
802003
Covalency effects on implanted119Sn in group IV semiconductors studied by Mössbauer and channeling experiments
G Weyer, A Nylandsted-Larsen, BI Deutch, JU Andersen, E Antoncik
Hyperfine Interactions 1 (1), 93-112, 1975
801975
Interstitial-mediated diffusion in germanium under proton irradiation
H Bracht, S Schneider, JN Klug, CY Liao, JL Hansen, EE Haller, ...
Physical review letters 103 (25), 255501, 2009
782009
Diffusion of Sb in relaxed Si(1− x)Ge(x)
AN Larsen, P Kringhøj
Applied physics letters 68 (19), 2684-2686, 1996
771996
Composition dependence of Si and Ge diffusion in relaxed Si(1− x)Ge(x) alloys
R Kube, H Bracht, JL Hansen, AN Larsen, EE Haller, S Paul, W Lerch
Journal of Applied Physics 107 (7), 073520, 2010
762010
Strain-relaxed SiGe/Si heteroepitaxial structures of low threading-dislocation density
PI Gaiduk, AN Larsen, JL Hansen
Thin Solid Films 367 (1-2), 120-125, 2000
652000
The antimony-vacancy defect in -type germanium
CE Lindberg, JL Hansen, P Bomholt, A Mesli, KB Nielsen, AN Larsen, ...
Applied Physics Letters 87 (17), 172103, 2005
592005
Epitaxial growth of Ge and SiGe on Si substrates
AN Larsen
Materials science in semiconductor processing 9 (4-5), 454-459, 2006
582006
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Articles 1–20