Arne Nylandsted Larsen

Citado por

	Total	Desde 2019
Citas	7107	977
Índice h	41	13
Índice i10	180	30

420

210

105

315

198519861987198819891990199119921993199419951996199719981999200020012002200320042005200620072008200920102011201220132014201520162017201820192020202120222023202427 19 16 32 39 22 18 59 39 27 38 74 99 137 117 89 149 165 211 286 263 291 236 309 242 257 296 314 346 403 374 321 318 304 244 231 189 154 115 44

Acceso público

Ver todo

27 artículos

13 artículos

disponibles

no disponibles

Basado en requisitos de financiación

Coautores

Гайдук, Петр Иванович; PI Gaiduk, П...Belarusian State University, Department of RF&CT, 4 Nezavisimosti av., 220030 Minsk, Belarus;Dirección de correo verificada de bsu.by
Hartmut Bracht, Prof. Dr. rer. nat.Institut für Materialphysik, Universität MünsterDirección de correo verificada de uni-muenster.de
Jacob Fage-PedersenNo longer at universityDirección de correo verificada de fage-pedersen.dk
Brian JulsgaardAarhus UniversityDirección de correo verificada de phys.au.dk
Christian UhrenfeldtScientistDirección de correo verificada de uhrenfeldt.dk
Rita RizzoliCNR IMM-BolognaDirección de correo verificada de bo.imm.cnr.it
Andrej KuznetsovProfessor of Physics, University of OsloDirección de correo verificada de fys.uio.no
Sanjay K RamAssociate Professor, Department of Physics, Amrita UniversityDirección de correo verificada de am.amrita.edu
Sabrina R. JohannsenAarhus universityDirección de correo verificada de inano.dk
T F VillesenPhd. Physics, Aarhus UniversityDirección de correo verificada de phys.au.dk
Ole HansenProfessor, DTU Nanotech, the Technical University of DenmarkDirección de correo verificada de nanotech.dtu.dk
Flemming BesenbacherProfessor in nanosceince and physics, Aarhus University; Chairman of the Carlsberg FoundationDirección de correo verificada de inano.au.dk
Kin Man YuDepartment of Physics, City University of Hong KongDirección de correo verificada de cityu.edu.hk
René Kube, Dr. rer. nat.Baker HughesDirección de correo verificada de uni-muenster.de
Alain ClaverieCNRSDirección de correo verificada de cemes.fr
Dimitris TsoukalasProfessor at National Technical University of AthensDirección de correo verificada de central.ntua.gr
Alireza Dolatshahi-PirouzAssociate ProfessorDirección de correo verificada de nanotech.dtu.dk
Erik V ThomsenProfessor, DTU Health TechnologyDirección de correo verificada de dtu.dk
Patrick BriddonProfessor of Computational Physics, University of NewcastleDirección de correo verificada de ncl.ac.uk
Giorgio LulliAssociated Researcher, CNR-IMM Institute, BolognaDirección de correo verificada de bo.imm.cnr.it

Seguir

Arne Nylandsted Larsen

Professor Emeritus in Physics, Aarhus University

Dirección de correo verificada de phys.au.dk

Physics semiconductors defects photovoltaics nanophysics


Título Ordenar por citas Ordenar por año Ordenar por título	Citado por Citado por	Año
Nanoscale Structuring by Misfit Dislocations in Si(1− x)Ge(x)/Si Epitaxial Systems SY Shiryaev, F Jensen, JL Hansen, JW Petersen, AN Larsen Physical Review Letters 78 (3), 503, 1997	231	1997
Fibronectin adsorption, cell adhesion, and proliferation on nanostructured tantalum surfaces A Dolatshahi-Pirouz, T Jensen, DC Kraft, M Foss, P Kingshott, JL Hansen, ... Acs Nano 4 (5), 2874-2882, 2010	186	2010
Ge self-diffusion in epitaxial Si(1− x)Ge(x) layers NR Zangenberg, JL Hansen, J Fage-Pedersen, AN Larsen Physical Review Letters 87 (12), 125901, 2001	186	2001
Boron and phosphorus diffusion in strained and relaxed Si and SiGe NR Zangenberg, J Fage-Pedersen, JL Hansen, AN Larsen Journal of Applied Physics 94 (6), 3883-3890, 2003	171	2003
Irradiation-induced defects in Ge studied by transient spectroscopies J Fage-Pedersen, AN Larsen, A Mesli Physical review B 62 (15), 10116, 2000	165	2000
Structural and electrical properties of silicon dioxide layers with embedded germanium nanocrystals grown by molecular beam epitaxy A Kanjilal, JL Hansen, P Gaiduk, AN Larsen, N Cherkashin, A Claverie, ... Applied Physics Letters 82 (8), 1212-1214, 2003	162	2003
Diffusion and defect reactions between donors, C, and vacancies in Ge. I. Experimental results S Brotzmann, H Bracht, JL Hansen, AN Larsen, E Simoen, EE Haller, ... Physical Review B 77 (23), 235207, 2008	148	2008
Heavy doping effects in the diffusion of group IV and V impurities in silicon AN Larsen, KK Larsen, PE Andersen, BG Svensson Journal of applied physics 73 (2), 691-698, 1993	143	1993
Diffusion of Sb in strained and relaxed Si and SiGe P Kringhøj, AN Larsen, SY Shirayev Physical review letters 76 (18), 3372, 1996	128	1996
Diffusion of silicon in crystalline germanium HH Silvestri, H Bracht, JL Hansen, AN Larsen, EE Haller Semiconductor science and technology 21 (6), 758, 2006	104	2006
Chemical bath deposition of PbS nanocrystals: Effect of substrate AP Gaiduk, PI Gaiduk, AN Larsen Thin Solid Films 516 (12), 3791-3795, 2008	103	2008
The nature of electrically inactive antimony in silicon A Nylandsted Larsen, FT Pedersen, G Weyer, R Galloni, R Rizzoli, ... Journal of applied physics 59 (6), 1908-1917, 1986	94	1986
Radiation enhanced silicon self-diffusion and the silicon vacancy at high temperatures H Bracht, JF Pedersen, N Zangenberg, AN Larsen, EE Haller, G Lulli, ... Physical review letters 91 (24), 245502, 2003	92	2003
Composition dependence of Si and Ge diffusion in relaxed Si(1− x)Ge(x) alloys R Kube, H Bracht, JL Hansen, AN Larsen, EE Haller, S Paul, W Lerch Journal of Applied Physics 107 (7), 073520, 2010	88	2010
Interstitial-mediated diffusion in germanium under proton irradiation H Bracht, S Schneider, JN Klug, CY Liao, JL Hansen, EE Haller, ... Physical Review Letters 103 (25), 255501, 2009	84	2009
Covalency effects on implanted¹¹⁹Sn in group IV semiconductors studied by Mössbauer and channeling experiments G Weyer, A Nylandsted-Larsen, BI Deutch, JU Andersen, E Antoncik Hyperfine Interactions 1, 93-112, 1975	83	1975
Diffusion of Sb in relaxed Si(1− x)Ge(x) AN Larsen, P Kringhøj Applied physics letters 68 (19), 2684-2686, 1996	80	1996
Epitaxial growth of Ge and SiGe on Si substrates AN Larsen Materials science in semiconductor processing 9 (4-5), 454-459, 2006	78	2006
Strain-relaxed SiGe/Si heteroepitaxial structures of low threading-dislocation density PI Gaiduk, AN Larsen, JL Hansen Thin Solid Films 367 (1-2), 120-125, 2000	70	2000
Piezoresistance of silicon and strained Si0. 9Ge0. 1 J Richter, O Hansen, AN Larsen, JL Hansen, GF Eriksen, EV Thomsen Sensors and Actuators A: Physical 123, 388-396, 2005	67	2005

El sistema no puede realizar la operación en estos momentos. Inténtalo de nuevo más tarde.

Artículos 1–20

Citas por año

Citas duplicadas

Citas combinadas

Añadir coautoresCoautores

Seguir

Citado por

Coautores