Fabien Guillot

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Eva MonroyCEA, IRIG, PHELIQS-NPSC, Grenoble, FranceDirección de correo verificada de cea.fr
Maria TchernychevaResearcher at Centre de Nanosciences et de Nanotechnologies (C2N), CNRS, Universite Paris-SudDirección de correo verificada de u-psud.fr
Laurent NevouAMS RuschlikonDirección de correo verificada de ams.com
edith bellet-amalricUniv. Grenoble Alpes, CEA, INAC-Pheliqs, 38000 Grenoble, FranceDirección de correo verificada de cea.fr
Daniel HofstetterAlumnus of ETH Zürich and Université de NeuchâtelDirección de correo verificada de Alumni.ETHZ.ch
Martin AlbrechtLeibniz-Institut für KristallzüchtungDirección de correo verificada de ikz-berlin.de
Gad BahirTechnion-Israel Institute of TechnologyDirección de correo verificada de ee.technion.ac.il
Gottfried StrasserProfessor Materials Engineering for Nanoelectronics, TU WienDirección de correo verificada de tuwien.ac.at
Catherine Bougerol-(Chaillout)Directrice de recherche CNRSDirección de correo verificada de neel.cnrs.fr
Alon VardiMIT - CambridgeDirección de correo verificada de mit.edu

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Fabien Guillot

ANR

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Nanotechnologies


Título Ordenar por citas Ordenar por año Ordenar por título	Citado por Citado por	Año
Systematic experimental and theoretical investigation of intersubband absorption in quantum wells M Tchernycheva, L Nevou, L Doyennette, FH Julien, E Warde, F Guillot, ... Physical Review B—Condensed Matter and Materials Physics 73 (12), 125347, 2006	322	2006
GaN/AlN short-period superlattices for intersubband optoelectronics: A systematic study of their epitaxial growth, design, and performance PK Kandaswamy, F Guillot, E Bellet-Amalric, E Monroy, L Nevou, ... Journal of Applied Physics 104 (9), 2008	237	2008
Near infrared quantum cascade detector in GaN∕ AlGaN∕ AlN heterostructures A Vardi, G Bahir, F Guillot, C Bougerol, E Monroy, SE Schacham, ... Applied Physics Letters 92 (1), 2008	173	2008
GaN/AlGaN intersubband optoelectronic devices H Machhadani, P Kandaswamy, S Sakr, A Vardi, A Wirtmüller, L Nevou, ... New Journal of Physics 11 (12), 125023, 2009	122	2009
Si-doped GaN∕ AlN quantum dot superlattices for optoelectronics at telecommunication wavelengths F Guillot, E Bellet-Amalric, E Monroy, M Tchernycheva, L Nevou, ... Journal of applied physics 100 (4), 2006	106	2006
Room temperature demonstration of GaN∕ AlN quantum dot intraband infrared photodetector at fiber-optics communication wavelength A Vardi, N Akopian, G Bahir, L Doyennette, M Tchernycheva, L Nevou, ... Applied physics letters 88 (14), 2006	99	2006
High-quality AlN∕ GaN-superlattice structures for the fabrication of narrow-band 1.4 μm photovoltaic intersubband detectors D Hofstetter, E Baumann, FR Giorgetta, M Graf, M Maier, F Guillot, ... Applied physics letters 88 (12), 2006	94	2006
Short wavelength (λ= 2.13 μm) intersubband luminescence from GaN∕ AlN quantum wells at room temperature L Nevou, M Tchernycheva, FH Julien, F Guillot, E Monroy Applied physics letters 90 (12), 2007	78	2007
High-speed operation of GaN/AlGaN quantum cascade detectors at λ≈ 1.55 μm A Vardi, N Kheirodin, L Nevou, H Machhadani, L Vivien, P Crozat, ... Applied Physics Letters 93 (19), 2008	77	2008
Short-wavelength intersubband electroabsorption modulation based on electron tunneling between GaN∕ AlN coupled quantum wells L Nevou, N Kheirodin, M Tchernycheva, L Meignien, P Crozat, A Lupu, ... Applied physics letters 90 (22), 2007	75	2007
Electron confinement in strongly coupled GaN∕ AlN quantum wells M Tchernycheva, L Nevou, L Doyennette, FH Julien, F Guillot, E Monroy, ... Applied physics letters 88 (15), 2006	68	2006
Electrically adjustable intersubband absorption of a GaN∕ AlN superlattice grown on a transistorlike structure E Baumann, FR Giorgetta, D Hofstetter, S Leconte, F Guillot, ... Applied physics letters 89 (10), 2006	60	2006
GaN-based quantum dot infrared photodetector operating at 1.38 µm L Doyennette, L Nevou, M Tchernycheva, A Lupu, F Guillot, E Monroy, ... Electronics Letters 41 (19), 1077-1078, 2005	60	2005
Optically nonlinear effects in intersubband transitions of GaN∕ AlN-based superlattice structures D Hofstetter, E Baumann, FR Giorgetta, F Guillot, S Leconte, E Monroy Applied Physics Letters 91 (13), 2007	57	2007
Intraband absorption of doped GaN∕ AlN quantum dots at telecommunication wavelengths M Tchernycheva, L Nevou, L Doyennette, A Helman, R Colombelli, ... Applied Physics Letters 87 (10), 2005	53	2005
Intersubband resonant enhancement of second-harmonic generation in GaN∕ AlN quantum wells L Nevou, M Tchernycheva, F Julien, M Raybaut, A Godard, E Rosencher, ... Applied physics letters 89 (15), 2006	49	2006
Electrooptical modulator at telecommunication wavelengths based on GaN–AlN coupled quantum wells N Kheirodin, L Nevou, H Machhadani, P Crozat, L Vivien, ... IEEE Photonics Technology Letters 20 (9), 724-726, 2008	48	2008
High frequency (f=2.37 GHz) room temperature operation of 1.55 µm AlN/GaN-based intersubband detector FR Giorgetta, E Baumann, F Guillot, E Monroy, D Hofstetter Electronics letters 43 (3), 185-187, 2007	46	2007
Intersubband transition-based processes and devices in AlN/GaN-based heterostructures D Hofstetter, E Baumann, FR Giorgetta, R Théron, H Wu, WJ Schaff, ... Proceedings of the IEEE 98 (7), 1234-1248, 2010	43	2010
Room-temperature intersubband emission of GaN/AlN quantum wells at λ= 2.3 µm L Nevou, FH Julien, R Colombelli, F Guillot, E Monroy Electronics Letters 42 (22), 1308-1309, 2006	40	2006

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