| Synthesis of antimonene on germanium M Fortin-Deschênes, O Waller, TO Mentes, A Locatelli, S Mukherjee, ... Nano letters 17 (8), 4970-4975, 2017 | 206 | 2017 |
| Atomically uniform Sn-rich GeSn semiconductors with 3.0–3.5 μm room-temperature optical emission S Assali, J Nicolas, S Mukherjee, A Dijkstra, O Moutanabbir Applied Physics Letters 112 (25), 2018 | 88 | 2018 |
| An electrically excited nanoscale light source with active angular control of the emitted light E Le Moal, S Marguet, B Rogez, S Mukherjee, P Dos Santos, ... Nano letters 13 (9), 4198-4205, 2013 | 88 | 2013 |
| Strain and composition effects on Raman vibrational modes of silicon-germanium-tin ternary alloys JH Fournier-Lupien, S Mukherjee, S Wirths, E Pippel, N Hayazawa, ... Applied physics letters 103 (26), 2013 | 82 | 2013 |
| Phonon engineering in isotopically disordered silicon nanowires S Mukherjee, U Givan, S Senz, A Bergeron, S Francoeur, M Mata, J Arbiol, ... Nano Letters 15 (6), 3885, 2015 | 48 | 2015 |
| Dislocation pipe diffusion and solute segregation during the growth of metastable GeSn J Nicolas, S Assali, S Mukherjee, A Lotnyk, O Moutanabbir Crystal Growth & Design 20 (5), 3493-3498, 2020 | 41 | 2020 |
| Atomic-scale insights into semiconductor heterostructures: from experimental three-dimensional analysis of the interface to a generalized theory of interfacial roughness scattering T Grange, S Mukherjee, G Capellini, M Montanari, L Persichetti, ... Physical Review Applied 13 (4), 044062, 2020 | 35 | 2020 |
| Short-range atomic ordering in non-equilibrium silicon-germanium-tin semiconductors S Mukherjee, N Kodali, D Isheim, S Wirths, JM Hartmann, D Buca, ... Physical Review B (Rapid Communication) 95, 161402, 2017 | 29 | 2017 |
| Composition uniformity and large degree of strain relaxation in MBE-grown thick GeSn epitaxial layers, containing 16% Sn J Rathore, A Nanwani, S Mukherjee, S Das, O Moutanabbir, S Mahapatra Journal of Physics D: Applied Physics 54 (18), 185105, 2021 | 24 | 2021 |
| Highly tensile-strained Ge/InAlAs nanocomposites D Jung, J Faucher, S Mukherjee, A Akey, DJ Ironside, M Cabral, X Sang, ... Nature communications 8 (1), 14204, 2017 | 23 | 2017 |
| Laser-assisted field evaporation and three-dimensional atom-by-atom mapping of diamond isotopic homojunctions S Mukherjee, H Watanabe, D Isheim, DN Seidman, O Moutanabbir Nano letters 16 (2), 1335-1344, 2016 | 23 | 2016 |
| Growth and luminescence of polytypic InP on epitaxial graphene S Mukherjee, N Nateghi, RM Jacobberger, E Bouthillier, M De La Mata, ... Advanced Functional Materials 28 (8), 1705592, 2018 | 19 | 2018 |
| Reduction of thermal conductivity in nanowires by combined engineering of crystal phase and isotope disorder S Mukherjee, U Givan, S Senz, M De La Mata, J Arbiol, O Moutanabbir Nano letters 18 (5), 3066-3075, 2018 | 17 | 2018 |
| Intersubband transition engineering in the conduction band of asymmetric coupled Ge/SiGe quantum wells L Persichetti, M Montanari, C Ciano, L Di Gaspare, M Ortolani, ... Crystals 10 (3), 179, 2020 | 16 | 2020 |
| Atomic Pathways of Solute Segregation in the Vicinity of Nanoscale Defects S Mukherjee, S Assali, O Moutanabbir Nano Letters 21 (23), 9882-9888, 2021 | 13 | 2021 |
| Ge–Ge0. 92Sn0. 08 core–shell single nanowire infrared photodetector with superior characteristics for on-chip optical communication S Singh, S Mukherjee, S Mukherjee, S Assali, L Luo, S Das, ... Applied Physics Letters 120 (17), 2022 | 10 | 2022 |
| 3D atomic mapping of interfacial roughness and its spatial correlation length in sub-10 nm superlattices S Mukherjee, A Attiaoui, M Bauer, O Moutanabbir ACS applied materials & interfaces 12 (1), 1728-1736, 2019 | 9 | 2019 |
| A Light‐Hole Germanium Quantum Well on Silicon S Assali, A Attiaoui, PD Vecchio, S Mukherjee, J Nicolas, O Moutanabbir Advanced Materials 34 (27), 2201192, 2022 | 8 | 2022 |
| Group IV nanowires for carbon-free energy conversion S Mukherjee, S Assali, O Moutanabbir Semiconductors and Semimetals 98, 151-229, 2018 | 6 | 2018 |
| Wafer-Scale Growth of Sb2Te3 Films via Low-Temperature Atomic Layer Deposition for Self-Powered Photodetectors J Yang, J Li, A Bahrami, N Nasiri, S Lehmann, MO Cichocka, S Mukherjee, ... ACS Applied Materials & Interfaces 14 (48), 54034-54043, 2022 | 3 | 2022 |
Oussama MoutanabbirDirección de correo verificada de polymtl.ca
