| High-temperature growth of GaN nanowires by molecular beam epitaxy: toward the material quality of bulk GaN JK Zettler, C Hauswald, P Corfdir, M Musolino, L Geelhaar, H Riechert, ... Crystal Growth & Design 15 (8), 4104-4109, 2015 | 31 | 2015 |
| Compatibility of the selective area growth of GaN nanowires on AlN-buffered Si substrates with the operation of light emitting diodes M Musolino, A Tahraoui, S Fernández-Garrido, O Brandt, A Trampert, ... Nanotechnology 26 (8), 085605, 2015 | 27 | 2015 |
| A physical model for the reverse leakage current in (In, Ga) N/GaN light-emitting diodes based on nanowires M Musolino, D Van Treeck, A Tahraoui, L Scarparo, C De Santi, ... Journal of Applied Physics 119 (4), 044502, 2016 | 25 | 2016 |
| Understanding peculiarities in the optoelectronic characteristics of light emitting diodes based on (In, Ga) N/GaN nanowires M Musolino, A Tahraoui, F Limbach, J Lähnemann, U Jahn, O Brandt, ... Applied Physics Letters 105 (8), 083505, 2014 | 20 | 2014 |
| Effect of varying three-dimensional strain on the emission properties of light-emitting diodes based on (In,Ga)N/GaN nanowires M Musolino, A Tahraoui, L Geelhaar, F Sacconi, F Panetta, C De Santi, ... Physical Review Applied 7, 044014, 2017 | 5 | 2017 |
| A modified Shockley equation taking into account the multi-element nature of light emitting diodes based on nanowire ensembles M Musolino, A Tahraoui, D van Treeck, L Geelhaar, H Riechert Nanotechnology 27 (27), 275203, 2016 | 4 | 2016 |
| Growth, fabrication, and investigation of light-emitting diodes based on GaN nanowires M Musolino Humboldt-Universität zu Berlin, 2016 | 3 | 2016 |
| Electroluminescence and current–voltage measurements of single-(In,Ga)N/GaN-nanowire light-emitting diodes in a nanowire ensemble HRLG David van Treeck, Johannes Ledig, Gregor Scholz, Jonas Lähnemann ... Beilstein J. Nanotechnol. 10, 1177-1187, 2019 | 2 | 2019 |
| The hydride vapor phase epitaxy of GaN on silicon covered by nanostructures U Jahn, M Musolino, J Lähnemann, P Dogan, SF Garrido, JF Wang, K Xu, ... Semiconductor Science and Technology 31 (6), 065018, 2016 | 2 | 2016 |
| Deep level transient spectroscopy on light-emitting diodes based on (In, Ga) N/GaN nanowire ensembles M Musolino, M Meneghini, L Scarparo, C De Santi, A Tahraoui, ... Gallium Nitride Materials and Devices X 9363, 936325, 2015 | 2 | 2015 |
| Pixel Design Driven Performance Improvement in 4T CMOS Image Sensors: Dark Current Reduction and Full-Well Enhancement AM Brunetti, M Musolino, S Strangio, B Choubey IEEE Transactions on Electron Devices 67 (1), 409-412, 2019 | 1 | 2019 |
| Multiscale approach for the study of optoelectronic properties of InGaN/GaN nanowire light-emitting diodes F Sacconi, F Panetta, MA der Maur, A Di Carlo, A Pecchia, M Musolino, ... 2015 IEEE 15th International Conference on Nanotechnology (IEEE-NANO), 1551-1554, 2015 | 1 | 2015 |
| Staggered Pixel Layout to Reduce Area and Increase Full Well Capacity in CMOS Image Sensors AM Brunetti, M Musolino, B Choubey IEEE Transactions on Electron Devices 68 (2), 572-577, 2021 | | 2021 |
Henning RiechertDirector, Paul-Drude-Institut für FestkörperelektronikVerified email at pdi-berlin.de
