Maxime Berthou
Maxime Berthou
Research associate, Laboratoire Ampère, INSA Lyon
Correu electrònic verificat a
Citada per
Citada per
Gate Oxide Degradation of SiC MOSFET in Switching Conditions
R Ouaida, M Berthou, J León, X Perpina, S Oge, P Brosselard, C Joubert
Electron Device Letters, 1, 2014
Monolithically Integrated Temperature Sensor in Silicon Carbide Power MOSFETs
M Berthou, P Godignon, J Milan
IEEE Transaction on Power Electronics, 7, 2013
Study of 4H-SiC Schottky diode designs for 3.3 kV applications
H Bartolf, VK Sundaramoorthy, A Mihaila, M Berthou, P Godignon, ...
Materials Science Forum 778, 795-799, 2014
Study of 4H-SiC JBS diodes fabricated with tungsten Schottky barrier
M Berthou, P Godignon, J Montserrat, J Millán, D Planson
Journal of electronic materials 40 (12), 2355, 2011
Electrical performances and reliability of commercial SiC MOSFETs at high temperature and in SC conditions
B Maxime, O Remy, C Thibault, B Pierre, O Sebastion, T Dominique
2015 17th European Conference on Power Electronics and Applications (EPE'15 …, 2015
ON-state characteristics of proton irradiated 4H–SiC Schottky diode: The calibration of model parameters for device simulation
J Vobecký, P Hazdra, V Zahlava, A Mihaila, M Berthou
Solid-State Electronics 94, 32-38, 2014
4.5 kV SiC MOSFET with boron doped gate dielectric
V Soler, M Cabello, J Montserrat, J Rebollo, J Millán, P Godignon, ...
2016 28th International Symposium on Power Semiconductor Devices and ICs …, 2016
Radiation defects produced in 4H-SiC epilayers by proton and alpha-particle irradiation
P Hazdra, V Záhlava, J Vobecký, M Berthou, A Mihaila
Materials Science Forum 740, 661-664, 2013
Implementation of high voltage silicon carbide rectifiers and switches
M Berthou
Structural analysis of SiC Schottky diodes failure mechanism under current overload
J León, M Berthou, X Perpiñà, V Banu, J Montserrat, M Vellvehi, ...
Journal of Physics D: Applied Physics 47 (5), 055102, 2013
High-Voltage 4H-SiC Power MOSFETs With Boron-Doped Gate Oxide
V Soler, M Cabello, M Berthou, J Montserrat, J Rebollo, P Godignon, ...
IEEE Transactions on Industrial Electronics 64 (11), 8962-8970, 2017
State of art of current and future technologies in current limiting devices
R Ouaida, M Berthou, D Tournier, JF Depalma
2015 IEEE First International Conference on DC Microgrids (ICDCM), 175-180, 2015
Edge termination design improvements for 10 kV 4H-SiC bipolar diodes
DM Nguyen, R Huang, LV Phung, D Planson, M Berthou, P Godignon, ...
Materials Science Forum 740, 609-612, 2013
Rapid and Efficient Oxidation Process of SiC by in Situ Multiple RTP Steps
A Constant, N Camara, P Godignon, M Berthou, J Camassel, JM Decams
Materials Science Forum 645, 817-820, 2010
Small signal thermal analysis of local multibarrier behaviour in SiC Schottky diodes
J Leon, X Perpina, M Vellvehi, X Jorda, M Berthou, P Godignon
Journal of Physics D: Applied Physics 47 (38), 385101, 2014
Planar edge terminations for high voltage 4H-SiC power MOSFETs
V Soler, M Berthou, A Mihaila, J Monserrat, P Godignon, J Rebollo, ...
Semiconductor Science and Technology 32 (3), 035007, 2017
Experimental analysis of planar edge terminations for high voltage 4H-SiC devices
V Soler, M Berthou, A Mihaila, J Montserrat, P Godignon, J Rebollo, ...
2015 45th European Solid State Device Research Conference (ESSDERC), 68-71, 2015
Design and fabrication of high voltage 4H-SiC MOS transistors
V Soler, M Berthou, M Florentin, J Montserrat, P Godignon, J Rebollo, ...
SAAEI-2015, 2015
Investigation of using SiC MOSFET for high temperature applications
R Ouaida, M Berthou, P Brosselard, S Oge, P Bevilacqua, C Joubert
EPE Journal 25 (2), 5-11, 2015
Temperature effects on the ruggedness of SiC Schottky diodes under surge current
J León, X Perpiñà, V Banu, J Montserrat, M Berthou, M Vellvehí, ...
Microelectronics Reliability 54 (9-10), 2207-2212, 2014
En aquests moments el sistema no pot dur a terme l'operació. Torneu-ho a provar més tard.
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