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Rami Khazaka
Rami Khazaka
Principal Technologist at ASM
Dirección de correo verificada de polytechnique.edu - Página principal
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Methods for selective deposition of doped semiconductor material
LPB Lima, R Khazaka, Q Xie
US Patent 11,637,014, 2023
2042023
Methods for selective deposition using a sacrificial capping layer
LPB Lima, R Khazaka, Q Xie
US Patent 11,495,459, 2022
2042022
GeSn lasers covering a wide wavelength range thanks to uniaxial tensile strain
J Chrétien, N Pauc, F Armand Pilon, M Bertrand, QM Thai, L Casiez, ...
Acs Photonics 6 (10), 2462-2469, 2019
1362019
Characterization of nanosilver dry films for high-temperature applications
R Khazaka, B Thollin, L Mendizabal, D Henry, R Hanna
IEEE Transactions on Device and Materials Reliability 15 (2), 149-155, 2015
262015
Growth and characterization of SiGeSn pseudomorphic layers on 200 mm Ge virtual substrates
R Khazaka, E Nolot, J Aubin, JM Hartmann
Semiconductor Science and Technology 33 (12), 124011, 2018
212018
Silver versus white sheet as a back reflector for microcrystalline silicon solar cells deposited on LPCVD‐ZnO electrodes of various textures
R Khazaka, E Moulin, M Boccard, L Garcia, S Hänni, FJ Haug, F Meillaud, ...
Progress in Photovoltaics: Research and Applications 23 (9), 1182-1189, 2015
212015
Direct insight into grains formation in Si layers grown on 3C-SiC by chemical vapor deposition
R Khazaka, M Portail, P Vennéguès, D Alquier, JF Michaud
Acta Materialia 98, 336-342, 2015
152015
Toward high-quality 3C–SiC membrane on a 3C–SiC pseudo-substrate
R Khazaka, E Bahette, M Portail, D Alquier, JF Michaud
Materials Letters 160, 28-30, 2015
122015
Contact resistivity of highly doped Si: P, Si: As, and Si: P: As Epi layers for source/drain epitaxy
E Rosseel, C Porret, AY Hikavyy, R Loo, M Tirrito, B Douhard, O Richard, ...
ECS Transactions 98 (5), 37, 2020
112020
Epitaxial growth of Ga-doped SiGe for reduction of contact resistance in finFET source/drain materials
J Margetis, D Kohen, C Porret, L Lima, R Khazaka, G Rengo, R Loo, ...
ECS Transactions 93 (1), 7, 2019
112019
Mid-infrared GeSn-based LEDs with Sn content up to 16%
M Bertrand, N Pauc, QM Thai, J Chrétien, L Casiez, A Quintero, ...
2019 IEEE 16th International Conference on Group IV Photonics (GFP), 1-2, 2019
102019
Investigation of the growth of Si-Ge-Sn pseudomorphic layers on 200 mm Ge virtual substrates: impact of growth pressure, HCl and Si2H6 flows
R Khazaka, J Aubin, E Nolot, JM Hartmann
ECS Transactions 86 (7), 207, 2018
92018
Vertical GeSn electro-absorption modulators grown on Silicon for the mid-infrared
M Bertrand, L Casiez, A Quintero, J Chrétien, N Pauc, QM Thai, ...
2020 IEEE Photonics Conference (IPC), 1-2, 2020
82020
Silicon Growth on 3C-SiC (001)/Si (001): Pressure Influence and Thermal Effect
R Khazaka, M Portail, P Vennéguès, M Zielinski, T Chassagne, D Alquier, ...
Materials Science Forum 821, 978-981, 2015
72015
ACS Photonics 6, 2462 (2019)
J Chrétien, N Pauc, FA Pilon, M Bertrand, QM Thai, L Casiez, N Bernier, ...
7
Realization of minimum number of rotational domains in heteroepitaxied Si(110) on 3C-SiC(001)
R Khazaka, M Grundmann, M Portail, P Vennéguès, M Zielinski, ...
Applied Physics Letters 108 (1), 011608, 2016
62016
Turning the undesired voids in silicon into a tool: In-situ fabrication of free-standing 3C-SiC membranes
R Khazaka, JF Michaud, P Vennéguès, D Alquier, M Portail
Applied Physics Letters 110 (8), 2017
52017
On the interplay between Si (110) epilayer atomic roughness and subsequent 3C-SiC growth direction
R Khazaka, JF Michaud, P Vennéguès, L Nguyen, D Alquier, M Portail
Journal of Applied Physics 120 (18), 2016
32016
From atomic level investigations to membrane architecture : an in-depth study of the innovative 3C-SiC/Si/3C-SiC/Si heterostructure
R Khazaka
Francois Rabelais University, 2016
32016
Record High Active Boron Doping using Low Temperature In-situ CVD: Enabling Sub-5×10−10 Ω-cm2 ρc from Cryogenic (5 K) to Room Temperature
G Zheng, Y Wang, H Xu, R Khazaka, L Muehlenbein, S Luo, X Chen, ...
2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2023
22023
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