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Enrique San Andrés
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A comparative study of the electrical properties of TiO2 films grown by high-pressure reactive sputtering and atomic layer deposition
S Duenas, H Castán, H García, E San Andrés, M Toledano-Luque, I Mártil, ...
Semiconductor science and technology 20 (10), 1044, 2005
1012005
Rapid thermal annealing effects on the structural properties and density of defects in and films deposited by electron cyclotron resonance
E San Andrés, A Del Prado, FL Martınez, I Mártil, D Bravo, FJ López
Journal of Applied Physics 87 (3), 1187-1192, 2000
982000
High quality Ti-implanted Si layers above the Mott limit
J Olea, M Toledano-Luque, D Pastor, E San-Andrés, I Mártil, ...
Journal of Applied Physics 107 (10), 2010
672010
High-k Gate Stacks on Low Bandgap Tensile Strained Ge and GeSn Alloys for Field-Effect Transistors
S Wirths, D Stange, MA Pampillón, AT Tiedemann, G Mussler, A Fox, ...
ACS applied materials & interfaces 7 (1), 62-67, 2015
592015
Physical properties of high pressure reactively sputtered TiO2
ES Andrés, M Toledano-Luque, A Prado, MA Navacerrada, I Mártil, ...
Journal of Vacuum Science & Technology A 23 (6), 1523-1530, 2005
592005
Composition and optical properties of silicon oxynitride films deposited by electron cyclotron resonance
A Del Prado, E San Andrés, FL Martınez, I Mártil, G González-Dı́az, ...
Vacuum 67 (3-4), 507-512, 2002
562002
Bonding configuration and density of defects of thin films deposited by the electron cyclotron resonance plasma method
E San Andrés, A Del Prado, I Mártil, G González-Dıaz, D Bravo, FJ López, ...
Journal of Applied Physics 94 (12), 7462-7469, 2003
502003
Bonding structure and hydrogen content in silicon nitride thin films deposited by the electron cyclotron resonance plasma method
FL Martınez, R Ruiz-Merino, A Del Prado, E San Andrés, I Mártil, ...
Thin Solid Films 459 (1-2), 203-207, 2004
472004
High-pressure reactively sputtered HfO2: Composition, morphology, and optical properties
M Toledano-Luque, E San Andrés, A del Prado, I Mártil, ML Lucía, ...
Journal of Applied Physics 102 (4), 2007
442007
Hafnium oxide thin films deposited by high pressure reactive sputtering in atmosphere formed with different Ar/O2 ratios
M Toledano-Luque, E San Andrés, J Olea, A Del Prado, I Mártil, W Bohne, ...
Materials science in semiconductor processing 9 (6), 1020-1024, 2006
382006
RF split capacitance–voltage measurements of short-channel and leaky MOSFET devices
E San Andres, L Pantisano, J Ramos, S Severi, L Trojman, S De Gendt, ...
IEEE electron device letters 27 (9), 772-774, 2006
322006
A reliable metric for mobility extraction of short-channel MOSFETs
S Severi, L Pantisano, E Augendre, E San Andrés, P Eyben, K De Meyer
IEEE transactions on electron devices 54 (10), 2690-2698, 2007
312007
Optical and structural properties of films deposited by electron cyclotron resonance and their correlation with composition
A Del Prado, E San Andrés, I Mártil, G González-Díaz, D Bravo, FJ López, ...
Journal of applied physics 93 (11), 8930-8938, 2003
272003
Characterization of nitrogen-rich silicon nitride films grown by the electron cyclotron resonance plasma technique
L Wang, HS Reehal, FL Martinez, E San Andrés, A Del Prado
Semiconductor science and technology 18 (7), 633, 2003
272003
Scandium oxide deposited by high-pressure sputtering for memory devices: Physical and interfacial properties
PC Feijoo, A Del Prado, M Toledano-Luque, E San Andrés, ML Lucía
Journal of Applied Physics 107 (8), 2010
242010
Thermally induced modifications on bonding configuration and density of defects of plasma deposited films
E San Andrés, A Del Prado, I Mártil, G González-Dı́az, D Bravo, FJ López
Journal of applied physics 92 (4), 1906-1913, 2002
232002
Negligible effect of process-induced strain on intrinsic NBTI behavior
A Shickova, B Kaczer, P Verheyen, G Eneman, E San Andres, M Jurczak, ...
IEEE electron device letters 28 (3), 242-244, 2007
212007
Optical spectroscopic study of the SiN∕ HfO2 interfacial formation during rf sputtering of HfO2
M Toledano-Luque, ML Lucía, A Del Prado, E San Andrés, I Mártil, ...
Applied Physics Letters 91 (19), 2007
202007
Effects of Gd2O3 Gate Dielectric on Proton-Irradiated AlGaN/GaN HEMTs
Z Gao, MF Romero, A Redondo-Cubero, MA Pampillon, E San Andres, ...
IEEE Electron Device Letters 38 (5), 611-614, 2017
192017
Physical properties of high pressure reactively sputtered hafnium oxide
M Toledano-Luque, FL Martínez, E San Andres, A Del Prado, I Martil, ...
Vacuum 82 (12), 1391-1394, 2008
192008
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