Max C. Lemme
Max C. Lemme
Professor, RWTH Aachen University, Germany, Director, AMO GmbH
Verified email at eld.rwth-aachen.de - Homepage
Title
Cited by
Cited by
Year
A graphene field-effect device
MC Lemme, TJ Echtermeyer, M Baus, H Kurz
IEEE Electron Device Letters 28 (4), 282-284, 2007
12042007
Gate-activated photoresponse in a graphene p–n junction
MC Lemme, FHL Koppens, AL Falk, MS Rudner, H Park, LS Levitov, ...
Nano Letters 11 (10), 4134-4137, 2011
3972011
Intrinsic and extrinsic corrugation of monolayer graphene deposited on SiO 2
V Geringer, M Liebmann, T Echtermeyer, S Runte, M Schmidt, ...
Physical review letters 102 (7), 076102, 2009
3942009
Precision cutting and patterning of graphene with helium ions
DC Bell, MC Lemme, LA Stern, JR Williams, CM Marcus
Nanotechnology 20 (45), 455301, 2009
3872009
Efficient inkjet printing of graphene
J Li, F Ye, S Vaziri, M Muhammed, MC Lemme, M Östling
Advanced Materials 25 (29), 3985-3992, 2013
3772013
Etching of graphene devices with a helium ion beam
MC Lemme, DC Bell, JR Williams, LA Stern, BWH Baugher, ...
ACS Nano 3 (9), 2674-2676, 2009
3372009
Electromechanical piezoresistive sensing in suspended graphene membranes
AD Smith, F Niklaus, A Paussa, S Vaziri, AC Fischer, M Sterner, ...
Nano Letters 13 (7), 3237-3242, 2013
2992013
Residual Metallic Contamination of Transferred Chemical Vapor Deposited Graphene
G Lupina, J Kitzmann, I Costina, M Lukosius, C Wenger, A Wolff, S Vaziri, ...
ACS Nano 9 (5), 4776–4785, 2015
2362015
A graphene-based hot electron transistor
S Vaziri, G Lupina, C Henkel, AD Smith, M Östling, J Dabrowski, ...
Nano Letters 13 (4), 1435-1439, 2013
2192013
Non-volatile switching in graphene field effect devices
TJ Echtermeyer, MC Lemme, M Baus, BN Szafranek, AK Geim, H Kurz
IEEE Electron Device Letters 29 (8), 952-954, 2008
1982008
High-performance hybrid electronic devices from layered PtSe2 films grown at low temperature
C Yim, K Lee, N McEvoy, M O'Brien, S Riazimehr, NC Berner, CP Cullen, ...
ACS Nano 10 (10), 9550–9558, 2016
1962016
Recommended methods to study resistive switching devices
M Lanza, HSP Wong, E Pop, D Ielmini, D Strukov, BC Regan, L Larcher, ...
Advanced Electronic Materials 5 (1), 1800143, 2019
1952019
Resistive graphene humidity sensors with rapid and direct electrical readout
AD Smith, K Elgammal, F Niklaus, A Delin, AC Fischer, S Vaziri, ...
Nanoscale 7 (45), 19099-19109, 2015
1882015
Vertical graphene base transistor
W Mehr, JC Scheytt, J Dabrowski, G Lippert, YH Xie, MC Lemme, ...
IEEE Electron Device Letters 33 (5), 691-693, 2012
1612012
Inkjet Printing of MoS2
J Li, MM Naiini, S Vaziri, MC Lemme, M Östling
Advanced Functional Materials 24 (41), 6524-6531, 2014
1532014
Navigation aids in the search for future high-k dielectrics: Physical and electrical trends
O Engström, B Raeissi, S Hall, O Buiu, MC Lemme, HDB Gottlob, ...
Solid-State Electronics 51 (4), 622-626, 2007
1492007
Mobility in graphene double gate field effect transistors
MC Lemme, TJ Echtermeyer, M Baus, BN Szafranek, J Bolten, M Schmidt, ...
Solid-State Electronics 52 (4), 514-518, 2008
1352008
Graphene-enabled wireless communication for massive multicore architectures
S Abadal, E Alarcón, A Cabellos-Aparicio, MC Lemme, M Nemirovsky
IEEE Communications Magazine 51 (11), 137-143, 2013
1332013
Bistability and oscillatory motion of natural nanomembranes appearing within monolayer graphene on silicon dioxide
T Mashoff, M Pratzer, V Geringer, TJ Echtermeyer, MC Lemme, ...
Nano Letters 10 (2), 461-465, 2010
1232010
Current status of graphene transistors
MC Lemme
Solid State Phenomena 156, 499-509, 2010
1062010
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Articles 1–20