Max C. Lemme
Max C. Lemme
Professor, RWTH Aachen University, Germany, Director, AMO GmbH
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A graphene field-effect device
MC Lemme, TJ Echtermeyer, M Baus, H Kurz
IEEE Electron Device Letters 28 (4), 282-284, 2007
11882007
Precision cutting and patterning of graphene with helium ions
DC Bell, MC Lemme, LA Stern, JR Williams, CM Marcus
Nanotechnology 20 (45), 455301, 2009
3912009
Intrinsic and extrinsic corrugation of monolayer graphene deposited on SiO 2
V Geringer, M Liebmann, T Echtermeyer, S Runte, M Schmidt, ...
Physical review letters 102 (7), 076102, 2009
3882009
Gate-activated photoresponse in a graphene p–n junction
MC Lemme, FHL Koppens, AL Falk, MS Rudner, H Park, LS Levitov, ...
Nano Letters 11 (10), 4134-4137, 2011
3872011
Efficient inkjet printing of graphene
J Li, F Ye, S Vaziri, M Muhammed, MC Lemme, M Östling
Advanced Materials 25 (29), 3985-3992, 2013
3642013
Etching of graphene devices with a helium ion beam
MC Lemme, DC Bell, JR Williams, LA Stern, BWH Baugher, ...
ACS Nano 3 (9), 2674-2676, 2009
3292009
Electromechanical piezoresistive sensing in suspended graphene membranes
AD Smith, F Niklaus, A Paussa, S Vaziri, AC Fischer, M Sterner, ...
Nano Letters 13 (7), 3237-3242, 2013
2902013
Residual Metallic Contamination of Transferred Chemical Vapor Deposited Graphene
G Lupina, J Kitzmann, I Costina, M Lukosius, C Wenger, A Wolff, S Vaziri, ...
ACS Nano 9 (5), 4776–4785, 2015
2222015
A graphene-based hot electron transistor
S Vaziri, G Lupina, C Henkel, AD Smith, M Östling, J Dabrowski, ...
Nano Letters 13 (4), 1435-1439, 2013
2142013
Non-volatile switching in graphene field effect devices
TJ Echtermeyer, MC Lemme, M Baus, BN Szafranek, AK Geim, H Kurz
IEEE Electron Device Letters 29 (8), 952-954, 2008
1952008
High-performance hybrid electronic devices from layered PtSe2 films grown at low temperature
C Yim, K Lee, N McEvoy, M O'Brien, S Riazimehr, NC Berner, CP Cullen, ...
ACS Nano 10 (10), 9550–9558, 2016
1812016
Resistive graphene humidity sensors with rapid and direct electrical readout
AD Smith, K Elgammal, F Niklaus, A Delin, AC Fischer, S Vaziri, ...
Nanoscale 7 (45), 19099-19109, 2015
1772015
Recommended methods to study resistive switching devices
M Lanza, HSP Wong, E Pop, D Ielmini, D Strukov, BC Regan, L Larcher, ...
Advanced Electronic Materials 5 (1), 1800143, 2019
1702019
Vertical graphene base transistor
W Mehr, JC Scheytt, J Dabrowski, G Lippert, YH Xie, MC Lemme, ...
IEEE Electron Device Letters 33 (5), 691-693, 2012
1542012
Navigation aids in the search for future high-k dielectrics: Physical and electrical trends
O Engström, B Raeissi, S Hall, O Buiu, MC Lemme, HDB Gottlob, ...
Solid-State Electronics 51 (4), 622-626, 2007
1512007
Inkjet Printing of MoS2
J Li, MM Naiini, S Vaziri, MC Lemme, M Östling
Advanced Functional Materials 24 (41), 6524-6531, 2014
1442014
Mobility in graphene double gate field effect transistors
MC Lemme, TJ Echtermeyer, M Baus, BN Szafranek, J Bolten, M Schmidt, ...
Solid-State Electronics 52 (4), 514-518, 2008
1332008
Graphene-enabled wireless communication for massive multicore architectures
S Abadal, E Alarcón, A Cabellos-Aparicio, MC Lemme, M Nemirovsky
IEEE Communications Magazine 51 (11), 137-143, 2013
1302013
Bistability and oscillatory motion of natural nanomembranes appearing within monolayer graphene on silicon dioxide
T Mashoff, M Pratzer, V Geringer, TJ Echtermeyer, MC Lemme, ...
Nano Letters 10 (2), 461-465, 2010
1192010
Current status of graphene transistors
MC Lemme
Solid State Phenomena 156, 499-509, 2010
1022010
El sistema no puede realizar la operación en estos momentos. Inténtalo de nuevo más tarde.
Artículos 1–20