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Vertical Ferroelectric HfO2 FET based on 3-D NAND Architecture: Towards Dense Low-Power Memory
K Florent, M Pesic, A Subirats, K Banerjee, S Lavizzari, A Arreghini, ...
2018 IEEE International Electron Devices Meeting (IEDM), 2.5. 1-2.5. 4, 2018
1302018
Understanding ferroelectric Al: HfO2 thin films with Si-based electrodes for 3D applications
K Florent, S Lavizzari, M Popovici, L Di Piazza, U Celano, G Groeseneken, ...
Journal of Applied Physics 121 (20), 2017
812017
First demonstration of vertically stacked ferroelectric Al doped HfO2 devices for NAND applications
K Florent, S Lavizzari, L Di Piazza, M Popovici, E Vecchio, G Potoms, ...
2017 Symposium on VLSI Technology, T158-T159, 2017
722017
Reliability Study of Ferroelectric Al:HfO2 Thin Films for DRAM and NAND Applications
K Florent, S Lavizzari, L Di Piazza, M Popovici, J Duan, G Groeseneken, ...
IEEE Transactions on Electron Devices 64 (10), 4091-4098, 2017
712017
Analog in-memory computing in FeFET-based 1T1R array for edge AI applications
D Saito, T Kobayashi, H Koga, N Ronchi, K Banerjee, Y Shuto, J Okuno, ...
2021 Symposium on VLSI Technology, 1-2, 2021
382021
Impact of Charge trapping on Imprint and its Recovery in HfO2 based FeFET
Y Higashi, N Ronchi, B Kaczer, K Banerjee, SRC McMitchell, ...
2019 IEEE International Electron Devices Meeting (IEDM), 15.6. 1-15.6. 4, 2019
352019
Investigation of the endurance of FE-HfO2 devices by means of TDDB studies
K Florent, A Subirats, S Lavizzari, R Degraeve, U Celano, B Kaczer, ...
2018 IEEE International Reliability Physics Symposium (IRPS), 6D. 3-1-6D. 3-7, 2018
342018
Advanced a-VMCO resistive switching memory through inner interface engineering with wide (>102) on/off window, tunable μA-range switching current and …
B Govoreanu, L Di Piazza, J Ma, T Conard, A Vanleenhove, A Belmonte, ...
2016 IEEE Symposium on VLSI Technology, 1-2, 2016
302016
The flexoelectric effect in Al-doped hafnium oxide
U Celano, M Popovici, K Florent, S Lavizzari, P Favia, K Paulussen, ...
Nanoscale 10 (18), 8471-8476, 2018
242018
Investigation of imprint in FE-HfO₂ and its recovery
Y Higashi, B Kaczer, AS Verhulst, BJ O’Sullivan, N Ronchi, ...
IEEE Transactions on Electron Devices 67 (11), 4911-4917, 2020
232020
New Insights into the Imprint Effect in FE-HfO2 and its Recovery
Y Higashi, K Florent, A Subirats, B Kaczer, L Di Piazza, S Clima, N Ronchi, ...
2019 IEEE International Reliability Physics Symposium (IRPS), 1-7, 2019
212019
Ferroelectricity in Si-doped hafnia: probing challenges in absence of screening charges
U Celano, A Gomez, P Piedimonte, S Neumayer, L Collins, M Popovici, ...
Nanomaterials 10 (8), 1576, 2020
192020
First-Principles Perspective on Poling Mechanisms and Ferroelectric/Antiferroelectric Behavior of Hf1-xZrxO2 for FEFET Applications
S Clima, SRC McMitchell, K Florent, L Nyns, M Popovici, N Ronchi, ...
2018 IEEE International Electron Devices Meeting (IEDM), 16.5. 1-16.5. 4, 2018
182018
Elucidating possible crystallographic origins of wake-up mechanisms in ferroelectric hafnia
SRC McMitchell, S Clima, N Ronchi, K Banerjee, U Celano, M Popovici, ...
Applied Physics Letters 118 (9), 2021
142021
Enabling CD SEM metrology for 5nm technology node and beyond
GF Lorusso, T Ohashi, A Yamaguchi, O Inoue, T Sutani, N Horiguchi, ...
Metrology, inspection, and process control for microlithography XXXI 10145 …, 2017
142017
First demonstration of vertically stacked ferroelectric Al doped HfO
K Florent, S Lavizzari, L Di Piazza, M Popovici, E Vecchio, G Potoms
Proc. Symp. VLSI Technol, T158-T159, 0
13
First demonstration of ferroelectric Si: HfO2 based 3D FE-FET with trench architecture for dense nonvolatile memory application
K Banerjee, L Breuil, AP Milenin, M Pak, J Stiers, SRC McMitchell, ...
2021 IEEE International Memory Workshop (IMW), 1-4, 2021
122021
Cobalt UBM for fine pitch microbump applications in 3DIC
J Derakhshandeh, I De Preter, K Vandersmissen, D Dictus, L Di Piazza, ...
2015 IEEE International Interconnect Technology Conference and 2015 IEEE …, 2015
102015
IEEE Symposium on VLSI Technology
B Govoreanu, L Di Piazza, J Ma, T Conard, A Vanleenhove, A Belmonte, ...
IEEE, 2016
42016
Opportunities and challenges of resistive RAM for neuromorphic applications
R Degraeve, A Mallik, D Garbin, J Doevenspeck, A Fantini, D Rodopoulos, ...
2018 IEEE International Symposium on the Physical and Failure Analysis of …, 2018
32018
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