Sirona Valdueza - Felip
Sirona Valdueza - Felip
Associate Professor at University of Alcalá
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Effect of the quantum well thickness on the performance of InGaN photovoltaic cells
L Redaelli, A Mukhtarova, S Valdueza-Felip, A Ajay, C Bougerol, ...
Applied Physics Letters 105 (13), 131105, 2014
High-sensitive SPR sensing with Indium Nitride as a dielectric overlay of optical fibers
Ó Esteban, FB Naranjo, N Díaz-Herrera, S Valdueza-Felip, MC Navarrete, ...
Sensors and Actuators B: Chemical 158 (1), 372-376, 2011
High In-content InGaN layers synthesized by plasma-assisted molecular-beam epitaxy: Growth conditions, strain relaxation, and In incorporation kinetics
S Valdueza-Felip, E Bellet-Amalric, A Núñez-Cascajero, Y Wang, ...
Journal of Applied Physics 116 (23), 233504, 2014
Photovoltaic response of InGaN/GaN multiple-quantum well solar cells
S Valdueza-Felip, A Mukhtarova, Q Pan, G Altamura, L Grenet, C Durand, ...
Japanese Journal of Applied Physics 52 (8S), 08JH05, 2013
Dependence of the photovoltaic performance of pseudomorphic InGaN/GaN multiple-quantum-well solar cells on the active region thickness
A Mukhtarova, S Valdueza-Felip, L Redaelli, C Durand, C Bougerol, ...
Applied Physics Letters 108 (16), 161907, 2016
Improved conversion efficiency of as-grown InGaN/GaN quantum-well solar cells for hybrid integration
S Valdueza-Felip, A Mukhtarova, L Grenet, C Bougerol, C Durand, ...
Applied Physics Express 7 (3), 032301, 2014
Nonlinear absorption of InN/InGaN multiple-quantum-well structures at optical telecommunication wavelengths
FB Naranjo, PK Kandaswamy, S Valdueza-Felip, V Calvo, ...
Applied Physics Letters 98 (3), 031902, 2011
Study of high In-content AlInN deposition on p-Si (111) by RF-sputtering
A Núñez-Cascajero, L Monteagudo-Lerma, S Valdueza-Felip, C Navío, ...
Japanese Journal of Applied Physics 55 (5S), 05FB07, 2016
Carrier localization in InN/InGaN multiple-quantum wells with high In-content
S Valdueza-Felip, L Rigutti, FB Naranjo, P Ruterana, J Mangeney, ...
Applied Physics Letters 101 (6), 062109, 2012
Two-step method for the deposition of AlN by radio frequency sputtering
L Monteagudo-Lerma, S Valdueza-Felip, A Núñez-Cascajero, ...
Thin Solid Films 545, 149-153, 2013
Pin InGaN homojunctions (10–40% In) synthesized by plasma-assisted molecular beam epitaxy with extended photoresponse to 600 nm
S Valdueza-Felip, A Ajay, L Redaelli, MP Chauvat, P Ruterana, T Cremel, ...
Solar Energy Materials and Solar Cells 160, 355-360, 2017
Effect of the barrier thickness on the performance of multiple-quantum-well InGaN photovoltaic cells
L Redaelli, A Mukhtarova, A Ajay, A Núñez-Cascajero, S Valdueza-Felip, ...
Japanese Journal of Applied Physics 54 (7), 072302, 2015
Stranski–Krastanow growth of -oriented GaN/AlN quantum dots
L Lahourcade, S Valdueza-Felip, T Kehagias, GP Dimitrakopulos, ...
Applied Physics Letters 94 (11), 111901, 2009
Characterization of the Resonant Third-Order Nonlinear Susceptibility of Si-Doped GaN–AlN Quantum Wells and Quantum Dots at 1.5m
S Valdueza-Felip, FB Naranjo, M Gonzalez-Herraez, H Fernández, J Solis, ...
IEEE Photonics Technology Letters 20 (16), 1366-1368, 2008
Improvement of InN layers deposited on Si (111) by RF sputtering using a low-growth-rate InN buffer layer
S Valdueza-Felip, J Ibáñez, E Monroy, M González-Herráez, L Artús, ...
Thin Solid Films 520 (7), 2805-2809, 2012
Quality improvement of AlInN/p-Si heterojunctions with AlN buffer layer deposited by RF-sputtering
A Núñez-Cascajero, S Valdueza-Felip, R Blasco, M de La Mata, SI Molina, ...
Journal of Alloys and Compounds 769, 824-830, 2018
In-rich AlxIn1− xN grown by RF-sputtering on sapphire: From closely-packed columnar to high-surface quality compact layers
A Núñez-Cascajero, S Valdueza-Felip, L Monteagudo-Lerma, E Monroy, ...
Journal of Physics D: Applied Physics 50 (6), 065101, 2017
Influence of deposition conditions on nanocrystalline InN layers synthesized on Si (1 1 1) and GaN templates by RF sputtering
S Valdueza-Felip, FB Naranjo, M González-Herráez, L Lahourcade, ...
Journal of Crystal Growth 312 (19), 2689-2694, 2010
Waveguide saturable absorbers at 1.55 μm based on intraband transitions in GaN/AlN QDs
L Monteagudo-Lerma, S Valdueza-Felip, FB Naranjo, P Corredera, ...
Optics Express 21 (23), 27578-27586, 2013
Morphology and arrangement of InN nanocolumns deposited by radio-frequency sputtering: Effect of the buffer layer
L Monteagudo-Lerma, S Valdueza-Felip, A Núñez-Cascajero, A Ruiz, ...
Journal of Crystal Growth 434, 13-18, 2016
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