Jaume Roig-Guitart
Jaume Roig-Guitart
Principal Device Engineer, On Semiconductor
Correu electrònic verificat a onsemi.com
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Continuous analytic IV model for surrounding-gate MOSFETs
D Jiménez, B Iniguez, J Sune, LF Marsal, J Pallares, J Roig, D Flores
IEEE Electron Device Letters 25 (8), 571-573, 2004
3182004
Explicit continuous model for long-channel undoped surrounding gate MOSFETs
B Iniguez, D Jimenez, J Roig, HA Hamid, LF Marsal, J Pallarès
IEEE Transactions on Electron Devices 52 (8), 1868-1873, 2005
2442005
Analytical model of the threshold voltage and subthreshold swing of undoped cylindrical gate-all-around-based MOSFETs
H Abd El Hamid, B Iñíguez, JR Guitart
IEEE Transactions on Electron Devices 54 (3), 572-579, 2007
1572007
Two-dimensional analytical threshold voltage and subthreshold swing models of undoped symmetric double-gate MOSFETs
H Abd El Hamid, JR Guitart, B Iñíguez
IEEE transactions on electron devices 54 (6), 1402-1408, 2007
1192007
Explicit analytical charge and capacitance models of undoped double-gate MOSFETs
O Moldovan, D Jimenez, JR Guitart, FA Chaves, B Iniguez
IEEE transactions on electron devices 54 (7), 1718-1724, 2007
972007
An industrial process for 650V rated GaN-on-Si power devices using in-situ SiN as a gate dielectric
P Moens, C Liu, A Banerjee, P Vanmeerbeek, P Coppens, H Ziad, ...
2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's …, 2014
932014
Analytical charge and capacitance models of undoped cylindrical surrounding-gate MOSFETs
O Moldovan, B Iñiguez, D Jiménez, J Roig
IEEE transactions on electron devices 54 (1), 162-165, 2006
602006
A 3-D analytical physically based model for the subthreshold swing in undoped trigate FinFETs
H Abd El Hamid, JR Guitart, V Kilchytska, D Flandre, B Iñiguez
IEEE transactions on electron devices 54 (9), 2487-2496, 2007
582007
Analytical switching loss model for superjunction MOSFET with capacitive nonlinearities and displacement currents for DC–DC power converters
I Castro, J Roig, R Gelagaev, B Vlachakis, F Bauwens, DG Lamar, ...
IEEE Transactions on Power Electronics 31 (3), 2485-2495, 2015
562015
Origin of AnomalousHysteresis in Resonant Converters With Superjunction FETs
J Roig, F Bauwens
IEEE Transactions on Electron Devices 62 (9), 3092-3094, 2015
412015
Two-dimensional analytical threshold voltage roll-off and subthreshold swing models for undoped cylindrical gate all around MOSFET
H Abd-Elhamid, B Iniguez, D Jiménez, J Roig, J Pallarès, LF Marsal
Solid-state electronics 50 (5), 805-812, 2006
392006
Analysis of hot-carrier degradation in a SOI LDMOS transistor with a steep retrograde drift doping profile
I Cortés, J Roig, D Flores, J Urresti, S Hidalgo, J Rebollo
Microelectronics Reliability 45 (3-4), 493-498, 2005
362005
Study of novel techniques for reducing self-heating effects in SOI power LDMOS
J Roig, D Flores, S Hidalgo, M Vellvehi, J Rebollo, J Millán
Solid-State Electronics 46 (12), 2123-2133, 2002
352002
Short-circuit study in medium-voltage GaN cascodes, p-GaN HEMTs, and GaN MISHEMTs
M Fernandez, X Perpina, J Roig-Guitart, M Vellvehi, F Bauwens, M Tack, ...
IEEE Transactions on Industrial Electronics 64 (11), 9012-9022, 2017
342017
A numerical study of field plate configurations in RF SOI LDMOS transistors
I Cortés, J Roig, D Flores, J Urresti, S Hidalgo, J Rebollo
Solid-state electronics 50 (2), 155-163, 2006
322006
P-GaN HEMTs drain and gate current analysis under short-circuit
M Fernández, X Perpiñà, J Roig, M Vellvehi, F Bauwens, X Jordà, M Tack
IEEE Electron Device Letters 38 (4), 505-508, 2017
272017
Reduction of self-heating effect on SOIM devices
J Roig, D Flores, M Vellvehí, J Rebollo, J Millan
Microelectronics Reliability 42 (1), 61-66, 2002
262002
Stress-induced mobility enhancement for integrated power transistors
P Moens, J Roig, F Clemente, I De Wolf, B Desoete, F Bauwens, M Tack
2007 IEEE International Electron Devices Meeting, 877-880, 2007
192007
Measurements for Superjunction MOSFETs: Limitations and Opportunities
GD Zulauf, J Roig-Guitart, JD Plummer, JM Rivas-Davila
IEEE Transactions on Electron Devices 66 (1), 578-584, 2018
162018
Suitable operation conditions for different 100V trench-based power MOSFETs in 48V-input synchronous buck converters
J Roig, D Lee, F Bauwens, B Burra, A Rinaldi, J McDonald, B Desoete
Proceedings of the 2011 14th European Conference on Power Electronics and …, 2011
162011
En aquests moments el sistema no pot dur a terme l'operació. Torneu-ho a provar més tard.
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