| Analysis and simulation of the multiple resistive switching modes occurring in HfOx-based resistive random access memories using memdiodes S Petzold, E Miranda, SU Sharath, J Muñoz-Gorriz, T Vogel, E Piros, ... Journal of applied physics 125 (23), 2019 | 34 | 2019 |
| Application of the clustering model to time-correlated oxide breakdown events in multilevel antifuse memory cells JM Gorriz, MB Gonzalez, F Campabadal, J Suñé, EA Miranda IEEE Electron Device Letters 41 (12), 1770-1773, 2020 | 8 | 2020 |
| A new method for estimating the conductive filament temperature in OxRAM devices based on escape rate theory A Rodriguez-Fernandez, J Muñoz-Gorriz, J Suñé, E Miranda Microelectronics reliability 88, 142-146, 2018 | 7 | 2018 |
| Exploratory study and application of the angular wavelet analysis for assessing the spatial distribution of breakdown spots in Pt/HfO2/Pt structures J Muñoz-Gorriz, S Monaghan, K Cherkaoui, J Suñé, PK Hurley, E Miranda Journal of Applied Physics 122 (21), 2017 | 7 | 2017 |
| SPICE model for the current-voltage characteristic of resistive switching devices including the snapback effect E Miranda, J Muñoz-Gorriz, J Suñé, K Fröhlich Microelectronic Engineering 215, 110998, 2019 | 6 | 2019 |
| Top electrode dependence of the resistive switching behavior in HfO2/n+Si-based devices J Munoz-Gorriz, MC Acero, MB Gonzalez, F Campabadal 2017 Spanish Conference on Electron Devices (CDE), 1-4, 2017 | 6 | 2017 |
| Analysis of the successive breakdown statistics of multilayer Al2O3/HfO2 gate stacks using the time-dependent clustering model J Muñoz-Gorriz, MB Gonzalez, F Campabadal, J Suñé, E Miranda Microelectronics Reliability 114, 113748, 2020 | 4 | 2020 |
| Impact of the forming and cycling processes on the electrical and physical degradation characteristics of HfO2-based resistive switching devices J Muñoz-Gorriz, MB González, E Miranda, J Suñé, F Campabadal Thin Solid Films 706, 138027, 2020 | 4 | 2020 |
| Assessing the correlation between location and size of catastrophic breakdown events in high-K MIM capacitors J Muñoz-Gorriz, D Blachier, G Reimbold, F Campabadal, J Suñé, ... IEEE Transactions on Device and Materials Reliability 19 (2), 452-460, 2019 | 4 | 2019 |
| Spatial analysis of failure sites in large area MIM capacitors using wavelets J Muñoz-Gorriz, S Monaghan, K Cherkaoui, J Suñé, PK Hurley, E Miranda Microelectronic Engineering 178, 10-16, 2017 | 4 | 2017 |
| Simple method for monitoring the switching activity in memristive cross-point arrays with line resistance effects E Miranda, A Morell, J Muñoz-Gorriz, J Suñé Microelectronics Reliability 100, 113327, 2019 | 3 | 2019 |
| Detection of inhibitory effects in the generation of breakdown spots in HfO2-based MIM devices J Muñoz-Gorriz, S Monaghan, K Cherkaoui, J Suñé, PK Hurley, E Miranda Microelectronic Engineering 215, 111023, 2019 | 3 | 2019 |
| Characterization of the failure site distribution in MIM devices using zoomed wavelet analysis J Muñoz-Gorriz, S Monaghan, K Cherkaoui, J Suñé, PK Hurley, E Miranda Journal of Electronic Materials 47, 5033-5038, 2018 | 3 | 2018 |
| Application of artificial neural networks to the identification of weak electrical regions in large area MIM structures J Muñoz-Gorriz, S Monaghan, K Cherkaoui, J Suñé, PK Hurley, E Miranda Microelectronics Reliability 126, 114312, 2021 | 1 | 2021 |
| Failure Analysis of Large Area Pt/HfO2/Pt Capacitors Using Multilayer Perceptrons J Muñoz-Gorriz, S Monaghan, K Cherkaoui, J Suñé, PK Hurley, E Miranda 2021 IEEE International Symposium on the Physical and Failure Analysis of …, 2021 | 1 | 2021 |
| Degradación y conducción multifilamentaria en estructuras MIS/MIM basadas en HfO2 J Muñoz Gorriz | | 2021 |
| Effect of Resistive Switching Cycling on the Physical Characteristics of Ni/HfO2/n+-Si RRAM Devices J Muñoz-Gorriz, MC Acero Leal, MB González, F Campabadal, E Miranda | | 2018 |
