Seguir
Lili Yu
Lili Yu
Meta AI
Dirección de correo verificada de mit.edu
Título
Citado por
Citado por
Año
Integrated Circuits Based on Bilayer MoS2 Transistors
H Wang, L Yu, YH Lee, Y Shi, A Hsu, ML Chin, LJ Li, M Dubey, J Kong, ...
Nano letters 12 (9), 4674-4680, 2012
19422012
Role of the Seeding Promoter in MoS2 Growth by Chemical Vapor Deposition
X Ling, YH Lee, Y Lin, W Fang, L Yu, MS Dresselhaus, J Kong
Nano letters 14 (2), 464-472, 2014
8212014
Synthesis and transfer of single-layer transition metal disulfides on diverse surfaces
YH Lee, L Yu, H Wang, W Fang, X Ling, Y Shi, CT Lin, JK Huang, ...
Nano letters 13 (4), 1852-1857, 2013
7522013
Graphene/MoS2 Hybrid Technology for Large-Scale Two-Dimensional Electronics
L Yu, YH Lee, X Ling, EJG Santos, YC Shin, Y Lin, M Dubey, E Kaxiras, ...
Nano letters 14 (6), 3055-3063, 2014
6732014
Dielectric Screening of Excitons and Trions in Single-Layer MoS2
Y Lin, X Ling, L Yu, S Huang, AL Hsu, YH Lee, J Kong, MS Dresselhaus, ...
Nano letters 14 (10), 5569-5576, 2014
6582014
Lima: Less is more for alignment
C Zhou, P Liu, P Xu, S Iyer, J Sun, Y Mao, X Ma, A Efrat, P Yu, L Yu, ...
arXiv preprint arXiv:2305.11206, 2023
3722023
Parallel stitching of 2D materials
X Ling, Y Lin, Q Ma, Z Wang, Y Song, L Yu, S Huang, W Fang, X Zhang, ...
Advanced materials 28 (12), 2322-2329, 2016
2542016
High-Performance WSe2 Complementary Metal Oxide Semiconductor Technology and Integrated Circuits
L Yu, A Zubair, EJG Santos, X Zhang, Y Lin, Y Zhang, T Palacios
Nano letters 15 (8), 4928-4934, 2015
2432015
High-risk breast lesions: a machine learning model to predict pathologic upgrade and reduce unnecessary surgical excision
M Bahl, R Barzilay, AB Yedidia, NJ Locascio, L Yu, CD Lehman
Radiology 286 (3), 810-818, 2018
1762018
Design, Modeling, and Fabrication of Chemical Vapor Deposition Grown MoS2 Circuits with E-Mode FETs for Large-Area Electronics
L Yu, D El-Damak, U Radhakrishna, X Ling, A Zubair, Y Lin, Y Zhang, ...
Nano letters 16 (10), 6349-6356, 2016
1712016
Origin and Control of OFF-State Leakage Current in GaN-on-Si Vertical Diodes
Y Zhang, M Sun, HY Wong, Y Lin, P Srivastava, C Hatem, M Azize, ...
IEEE, 2015
1502015
Functionalized graphene for high-performance two-dimensional spintronics devices
L Li, R Qin, H Li, L Yu, Q Liu, G Luo, Z Gao, J Lu
ACS nano 5 (4), 2601-2610, 2011
1282011
Large-scale 2D electronics based on single-layer MoS2 grown by chemical vapor deposition
H Wang, L Yu, YH Lee, W Fang, A Hsu, P Herring, M Chin, M Dubey, LJ Li, ...
2012 International Electron Devices Meeting, 4.6. 1-4.6. 4, 2012
982012
Suggesting a response to a message by selecting a template using a neural network
L Yu, CD Fox, S Henry
US Patent App. 16/035,062, 2020
932020
Design space and origin of off-state leakage in GaN vertical power diodes
Y Zhang, HY Wong, M Sun, S Joglekar, L Yu, NA Braga, RV Mickevicius, ...
2015 IEEE International Electron Devices Meeting (IEDM), 35.1. 1-35.1. 4, 2015
932015
Electronics including graphene-based hybrid structures
L Yu, H Wang, T Palacios
US Patent App. 15/034,051, 2016
892016
High-performance 500 V quasi-and fully-vertical GaN-on-Si pn diodes
Y Zhang, D Piedra, M Sun, J Hennig, A Dadgar, L Yu, T Palacios
IEEE Electron Device Letters 38 (2), 248-251, 2016
822016
Novel GaN trench MIS barrier Schottky rectifiers with implanted field rings
Y Zhang, M Sun, Z Liu, D Piedra, M Pan, X Gao, Y Lin, A Zubair, L Yu, ...
2016 IEEE International Electron Devices Meeting (IEDM), 10.2. 1-10.2. 4, 2016
702016
Large-area 2-D electronics: materials, technology, and devices
A Hsu, H Wang, YC Shin, B Mailly, X Zhang, L Yu, Y Shi, YH Lee, ...
Proceedings of the IEEE 101 (7), 1638-1652, 2013
612013
Scaling Autoregressive Multi-Modal Models: Pretraining and Instruction Tuning
L Yu, B Shi, R Pasunuru, B Muller, O Golovneva, T Wang, A Babu, B Tang, ...
arXiv preprint arXiv:2309.02591, 2023
472023
El sistema no puede realizar la operación en estos momentos. Inténtalo de nuevo más tarde.
Artículos 1–20