Takayuki Nozaki
Takayuki Nozaki
National Institute of Industrial Science and Technology
Dirección de correo verificada de aist.go.jp
TítuloCitado porAño
Large voltage-induced magnetic anisotropy change in a few atomic layers of iron
T Maruyama, Y Shiota, T Nozaki, K Ohta, N Toda, M Mizuguchi, ...
Nature nanotechnology 4 (3), 158, 2009
Induction of coherent magnetization switching in a few atomic layers of FeCo using voltage pulses
Y Shiota, T Nozaki, F Bonell, S Murakami, T Shinjo, Y Suzuki
Nature materials 11 (1), 39, 2012
Spin injection into a graphene thin film at room temperature
M Ohishi, M Shiraishi, R Nouchi, T Nozaki, T Shinjo, Y Suzuki
Japanese Journal of Applied Physics 46 (7L), L605, 2007
Voltage-induced perpendicular magnetic anisotropy change in magnetic tunnel junctions
T Nozaki, Y Shiota, M Shiraishi, T Shinjo, Y Suzuki
Applied Physics Letters 96 (2), 022506, 2010
Voltage-assisted magnetization switching in ultrathin Fe80Co20 alloy layers
Y Shiota, T Maruyama, T Nozaki, T Shinjo, M Shiraishi, Y Suzuki
Applied Physics Express 2 (6), 063001, 2009
Electric-field-induced ferromagnetic resonance excitation in an ultrathin ferromagnetic metal layer
T Nozaki, Y Shiota, S Miwa, S Murakami, F Bonell, S Ishibashi, H Kubota, ...
Nature Physics 8 (6), 491, 2012
Substantial reduction of critical current for magnetization switching in an exchange-biased spin valve
Y Jiang, T Nozaki, S Abe, T Ochiai, A Hirohata, N Tezuka, K Inomata
Nature materials 3 (6), 361, 2004
Highly sensitive nanoscale spin-torque diode
S Miwa, S Ishibashi, H Tomita, T Nozaki, E Tamura, K Ando, N Mizuochi, ...
Nature materials 13 (1), 50, 2014
Structural characterization of bioengineered human corneal endothelial cell sheets fabricated on temperature-responsive culture dishes
T Ide, K Nishida, M Yamato, T Sumide, M Utsumi, T Nozaki, A Kikuchi, ...
Biomaterials 27 (4), 607-614, 2006
Spin-torque oscillator based on magnetic tunnel junction with a perpendicularly magnetized free layer and in-plane magnetized polarizer
H Kubota, K Yakushiji, A Fukushima, S Tamaru, M Konoto, T Nozaki, ...
Applied Physics Express 6 (10), 103003, 2013
Large voltage-induced changes in the perpendicular magnetic anisotropy of an MgO-based tunnel junction with an ultrathin Fe layer
T Nozaki, A Kozioł-Rachwał, W Skowroński, V Zayets, Y Shiota, S Tamaru, ...
Physical Review Applied 5 (4), 044006, 2016
Effective reduction of critical current for current-induced magnetization switching by a Ru layer insertion in an exchange-biased spin valve
Y Jiang, S Abe, T Ochiai, T Nozaki, A Hirohata, N Tezuka, K Inomata
Physical review letters 92 (16), 167204, 2004
Large change in perpendicular magnetic anisotropy induced by an electric field in FePd ultrathin films
F Bonell, S Murakami, Y Shiota, T Nozaki, T Shinjo, Y Suzuki
Applied Physics Letters 98 (23), 232510, 2011
Quantitative evaluation of voltage-induced magnetic anisotropy change by magnetoresistance measurement
Y Shiota, S Murakami, F Bonell, T Nozaki, T Shinjo, Y Suzuki
Applied Physics Express 4 (4), 043005, 2011
Quantum oscillation of the tunneling conductance in fully epitaxial double barrier magnetic tunnel junctions
T Nozaki, N Tezuka, K Inomata
Physical review letters 96 (2), 027208, 2006
Robustness of Spin Polarization in Graphene‐Based Spin Valves
M Shiraishi, M Ohishi, R Nouchi, N Mitoma, T Nozaki, T Shinjo, Y Suzuki
Advanced Functional Materials 19 (23), 3711-3716, 2009
Structural and magnetic properties of epitaxial -structured films grown on GaAs(001) substrates
A Hirohata, H Kurebayashi, S Okamura, M Kikuchi, T Masaki, T Nozaki, ...
Journal of applied physics 97 (10), 103714, 2005
Enhancement of perpendicular magnetic anisotropy in FeB free layers using a thin MgO cap layer
H Kubota, S Ishibashi, T Saruya, T Nozaki, A Fukushima, K Yakushiji, ...
Journal of Applied Physics 111 (7), 07C723, 2012
Large diode sensitivity of CoFeB/MgO/CoFeB magnetic tunnel junctions
S Ishibashi, T Seki, T Nozaki, H Kubota, S Yakata, A Fukushima, S Yuasa, ...
Applied Physics Express 3 (7), 073001, 2010
Pulse voltage-induced dynamic magnetization switching in magnetic tunneling junctions with high resistance-area product
Y Shiota, S Miwa, T Nozaki, F Bonell, N Mizuochi, T Shinjo, H Kubota, ...
Applied Physics Letters 101 (10), 102406, 2012
El sistema no puede realizar la operación en estos momentos. Inténtalo de nuevo más tarde.
Artículos 1–20